公开(公告)号：US20190263848A1

公开(公告)日：2019-08-29

申请号：US16406532

申请日：2019-05-08

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00 ,  H01L45/00 ,  C23C16/455 ,  C23C16/30

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US10308673B2

公开(公告)日：2019-06-04

申请号：US15711690

申请日：2017-09-21

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/30 ,  C07F11/00 ,  C23C16/455 ,  H01L45/00 ,  H01L21/02

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US20180072764A1

公开(公告)日：2018-03-15

申请号：US15711690

申请日：2017-09-21

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00 ,  H01L45/00 ,  C23C16/30

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US09783563B2

公开(公告)日：2017-10-10

申请号：US14882083

申请日：2015-10-13

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F7/02 ,  C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H01L45/00 ,  H01L21/02

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US09646820B2

公开(公告)日：2017-05-09

申请号：US14570668

申请日：2014-12-15

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/00 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/12 ,  H01G4/33 ,  H01L49/02

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75

Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.

公开(公告)号：US20160258054A1

公开(公告)日：2016-09-08

申请号：US15157698

申请日：2016-05-18

Applicant: ASM International N.V.

Inventor： Timo Hatanpaa ,  Jaakko Niinisto ,  Mikko Ritala ,  Markku Leskela ,  Suvi Haukka

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/405 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02 ,  C01P2006/40 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45553

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

公开(公告)号：US09365926B2

公开(公告)日：2016-06-14

申请号：US14629333

申请日：2015-02-23

Applicant: ASM International N.V.

Inventor： Timo Hatanpaa ,  Jaakko Niinisto ,  Mikko Ritala ,  Markku Leskela ,  Suvi Haukka

IPC: C23C16/40 ,  C23C16/455 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02

CPC classification number: C23C16/405 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02 ,  C01P2006/40 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45553

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Abstract translation: 本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。 金属氧化物薄膜可以使用金属有机反应物在高温下沉积。 在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。 金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。