公开(公告)号：US20230185183A1

公开(公告)日：2023-06-15

申请号：US17924626

申请日：2021-05-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Jiuning HU ,  Jun YE ,  Yen-Wen LU

IPC: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/44 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70308 ,  G03F7/70375 ,  G03F7/70683

Abstract: A method for improving a design of a patterning device. The method includes (i) obtaining mask points of a design of a mask feature, wherein the mask feature corresponds to a target feature in a target pattern to be printed on a substrate; and (ii) adjusting locations of the mask points to generate a modified design of the mask feature based on the adjusted mask points.

公开(公告)号：US20210018844A1

公开(公告)日：2021-01-21

申请号：US17062251

申请日：2020-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao

IPC: G03F7/20

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

公开(公告)号：US20160246168A1

公开(公告)日：2016-08-25

申请号：US15144242

申请日：2016-05-02

Applicant: ASML NETHERLANDS B.V

Inventor： Jun YE ,  Yu CAO ,  Hanying FENG

IPC: G03F1/36 ,  G06F17/50

CPC classification number: G03F1/36 ,  G03F1/144 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5081 ,  G06F2217/12

Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

Abstract translation: 一种提高用于成像具有多个特征的目标设计的光刻工艺的成像性能的有效的OPC方法。 该方法包括确定用于产生模拟图像的功能，其中功能考虑与光刻工艺相关联的工艺变化; 并基于此功能对每个OPC迭代中的每个评估点优化目标灰度级。 在一个给定的实施例中，该函数近似为聚焦和曝光的多项式函数，R（ε，ƒ）= P0 +ƒ2·Pb，轮廓线的阈值为T +Vε，其中PO表示标称焦点的图像强度， 表示相对于标称焦点的散焦值，ε表示曝光变化，V表示曝光变化的缩放，参数“Pb”表示二阶导数图像。 在另一个给定的实施例中，假设聚焦和曝光变化的概率分布为高斯，给出最佳聚焦的分析最佳灰度级。

公开(公告)号：US20150153651A1

公开(公告)日：2015-06-04

申请号：US14575609

申请日：2014-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying FENG ,  Yu CAO ,  Jun YE ,  Youping ZHANG

IPC: G03F7/20

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

Abstract translation: 本发明涉及用于设计对参数变化非常敏感的规格图案的方法和系统，因此对于用于对具有多个特征进行成像的目标设计的光刻工艺的校准中的随机和重复的测量误差是鲁棒的。 该方法可以包括以最佳辅助特征放置来识别最敏感的线宽/间距组合，其导致针对光刻过程参数变化（例如波前像差参数变化）的最敏感的CD（或其他光刻响应参数）变化。 该方法还可以包括设计具有多于一个测试图案的计量器，使得量规的组合响应可以被调整以产生对波前相关或其它光刻工艺参数的特定响应。 对参数变化的敏感性导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

公开(公告)号：US20150074619A1

公开(公告)日：2015-03-12

申请号：US14543326

申请日：2014-11-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Hanying FENG ,  Jun YE

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract translation: 本发明涉及一种用于调整光刻系统的方法，以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像，以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面，本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此，它消除了对CD测量或量规选择的要求。 根据其它方面，本发明也是通用的，因为它可以与某些常规技术相结合，以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。

公开(公告)号：US20140317580A1

公开(公告)日：2014-10-23

申请号：US14282754

申请日：2014-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G03F1/144 ,  G03F1/36

Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

Abstract translation: 公开了创建有效的基于模型的子分辨率辅助特征（MB-SRAF）的方法。 创建SRAF指南图，其中每个设计目标边缘位置对于给定的场点投票，放置在该场点上的单像素SRAF是否将改善或降级过程窗口上的空中图像。 在一个实施例中，SRAF引导图用于确定SRAF放置规则和/或微调已经放置的SRAF。 SRAF引导图可以直接用于将SRAF放置在掩码布局中。 可以生成包括SRAF的掩模布局数据，其中根据SRAF引导图放置SRAF。 SRAF引导图可以包括图像，其中每个像素值指示如果像素被包括为子分辨率辅助特征的一部分，则像素是否将对掩模布局中的特征的边缘行为贡献积极。