公开(公告)号：US09390206B2

公开(公告)日：2016-07-12

申请号：US14013593

申请日：2013-08-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70991

Abstract: A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.

公开(公告)号：US09009647B2

公开(公告)日：2015-04-14

申请号：US13858795

申请日：2013-04-08

Applicant: ASML Netherlands B.V.

Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

CPC classification number: G06F17/50 ,  G03F1/144 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70516

Abstract: A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.

Abstract translation: 一种基于模拟用于对具有多个特征进行成像的目标设计的光刻工艺的成像性能的有效的光学和抗蚀剂参数校准的方法。 该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 用于校准光刻过程的系统和方法，由此针对光学系统的标称配置计算多项式拟合，并且其可以用于估计其他配置的关键尺寸。

公开(公告)号：US08806394B2

公开(公告)日：2014-08-12

申请号：US14046778

申请日：2013-10-04

Applicant: ASML Netherlands B.V.

Inventor： Hanying Feng ,  Yu Cao ,  Jun Ye

IPC: G06F17/50 ,  G03F1/00 ,  G21K5/00 ,  G06F17/10 ,  G06F19/00 ,  G03F1/20 ,  G03F1/24 ,  G03F1/26 ,  G03F1/38 ,  G03F1/50

CPC classification number: G03F1/144 ,  G03F1/02 ,  G03F1/20 ,  G03F1/24 ,  G03F1/26 ,  G03F1/38 ,  G03F1/50 ,  G03F1/72 ,  G03F7/70141 ,  G03F7/70258 ,  G03F7/70525 ,  G06F17/10 ,  G06F17/5009 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G21K5/00 ,  Y02P90/265

Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

Abstract translation: 这里描述的是将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。

公开(公告)号：US10423075B2

公开(公告)日：2019-09-24

申请号：US14575609

申请日：2014-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying Feng ,  Yu Cao ,  Jun Ye ,  Youping Zhang

IPC: G03F7/20 ,  G06F17/10

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

公开(公告)号：US20140317580A1

公开(公告)日：2014-10-23

申请号：US14282754

申请日：2014-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G03F1/144 ,  G03F1/36

Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

Abstract translation: 公开了创建有效的基于模型的子分辨率辅助特征（MB-SRAF）的方法。 创建SRAF指南图，其中每个设计目标边缘位置对于给定的场点投票，放置在该场点上的单像素SRAF是否将改善或降级过程窗口上的空中图像。 在一个实施例中，SRAF引导图用于确定SRAF放置规则和/或微调已经放置的SRAF。 SRAF引导图可以直接用于将SRAF放置在掩码布局中。 可以生成包括SRAF的掩模布局数据，其中根据SRAF引导图放置SRAF。 SRAF引导图可以包括图像，其中每个像素值指示如果像素被包括为子分辨率辅助特征的一部分，则像素是否将对掩模布局中的特征的边缘行为贡献积极。

公开(公告)号：US10169522B2

公开(公告)日：2019-01-01

申请号：US14543326

申请日：2014-11-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu Cao ,  Hanying Feng ,  Jun Ye

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F1/70

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

公开(公告)号：US09779186B2

公开(公告)日：2017-10-03

申请号：US14282754

申请日：2014-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36

CPC classification number: G06F17/5009 ,  G03F1/144 ,  G03F1/36

Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

公开(公告)号：US08893058B2

公开(公告)日：2014-11-18

申请号：US13893534

申请日：2013-05-14

Applicant: ASML Netherlands B.V.

Inventor： Yu Cao ,  Hanying Feng ,  Jun Ye

IPC: G06F17/50 ,  G03B27/42 ,  G03B27/54 ,  G03B27/58 ,  G03B27/32 ,  G03F7/20 ,  G03F1/00 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract translation: 本发明涉及一种用于调整光刻系统的方法，以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像，以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面，本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此，它消除了对CD测量或量规选择的要求。 根据其它方面，本发明也是通用的，因为它可以与某些常规技术相结合，以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。

公开(公告)号：US10310371B2

公开(公告)日：2019-06-04

申请号：US15144242

申请日：2016-05-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

IPC: G03F1/36 ,  G03F1/00 ,  G03F7/20 ,  G06F17/50

Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

公开(公告)号：US20170176864A1

公开(公告)日：2017-06-22

申请号：US15451328

申请日：2017-03-06

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu HSU ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

IPC: G03F7/20

CPC classification number: G03F7/70066 ,  G03F7/705

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.