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公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US10514620B2
公开(公告)日：2019-12-24
申请号：US16315100
申请日：2017-08-14
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Franciscus Godefridus Casper Bijnen , Simon Gijsbert Josephus Mathijssen , Vassili Demergis , Edo Maria Hulsebos
IPC: G03F9/00
Abstract: A method of determining the position of an alignment mark on a substrate, the alignment mark having first and second segment, the method including illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal has a first component received during illumination of the first segment only, a second component received during illumination of the second segment only, and a third component received during simultaneous illumination of both segments. The positions of the segments are determined using the first component, the second component and the third component of the alignment signal.
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公开(公告)号：US10444647B2
公开(公告)日：2019-10-15
申请号：US16307512
申请日：2017-06-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Augustinus Hubert Maria Boshouwers , Johannes Onvlee
Abstract: A target structure such as an alignment mark on a semiconductor substrate becomes obscured by an opaque layer so that it cannot be located by an alignment sensor. A position for the mark is determined using an edge position sensor and relative position information that defines the position of the mark relative to one or more edge portions of the substrate is stored prior to formation of the opaque layer. A window can be opened in the opaque layer, based on the determined position. After revealing the target structure, the alignment sensor can, if desired, measure more accurately the position of the target structure, for use in controlling a further lithographic step. The edge position sensor may be a camera having an angle-selective behavior. The edge position sensor may be integrated within the alignment sensor hardware.
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公开(公告)号：US12032305B2
公开(公告)日：2024-07-09
申请号：US17922593
申请日：2021-05-11
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F9/7092 , G03F9/7076 , G03F7/70625
Abstract: A method of, and associated apparatuses for, performing a position measurement on an alignment mark including at least a first periodic structure having a direction of periodicity along a first direction. The method includes obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting uses one of a modulation fit or a background envelope periodic fit.
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公开(公告)号：US11927892B2
公开(公告)日：2024-03-12
申请号：US17784424
申请日：2020-11-17
Applicant: ASML Netherlands B.V.
IPC: G03F9/00
CPC classification number: G03F9/7088 , G03F9/7076 , G03F9/7084 , G03F9/7092
Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.
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Patent Agency Ranking
公开(公告)号：US11181836B2
公开(公告)日：2021-11-23
申请号：US16623912
申请日：2018-05-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Edo Maria Hulsebos , Patricius Aloysius Jacobus Tinnemans , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.
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公开(公告)号：US10901326B2
公开(公告)日：2021-01-26
申请号：US16808589
申请日：2020-03-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Edo Maria Hulsebos , Patricius Aloysius Jacobus Tinnemans , Ralph Brinkhof , Pieter Jacob Heres , Jorn Kjeld Lucas , Loek Johannes Petrus Verhees , Ingrid Margaretha Ardina Van Donkelaar , Franciscus Godefridus Casper Bijnen
Abstract: In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.
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公开(公告)号：US10331040B2
公开(公告)日：2019-06-25
申请号：US15763780
申请日：2016-09-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Edo Maria Hulsebos , Patricius Aloysius Jacobus Tinnemans , Ralph Brinkhof , Pieter Jacob Heres , Jorn Kjeld Lucas , Loek Johannes Petrus Verhees , Ingrid Margaretha Ardina Van Donkelaar , Franciscus Godefridus Casper Bijnen
Abstract: In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.
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19.发明授权公开(公告)号：US09891540B2
公开(公告)日：2018-02-13
申请号：US15504621
申请日：2015-05-29
Applicant: ASML HOLDING N.V. , ASML NETHERLANDS B.V.
CPC classification number: G03F7/7085 , G01B11/14 , G03F9/7088
Abstract: A measurement apparatus including an optical system to provide illumination radiation into a spot on a periodic structure and to receive radiation redirected by the periodic structure, the optical system including a first stop to block zero order radiation from the periodic structure and allow non-zero order radiation to pass, and a second stop to block zero order radiation passing the first stop and to allow the non-zero order radiation to pass, and a radiation detector, downstream of the optical system, to receive the non-zero order radiation.
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20.发明授权Method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system 有权确定对准标记用于校正覆盖层的有用性的方法以及光刻设备和覆盖测量系统的组合公开(公告)号：US09454084B2
公开(公告)日：2016-09-27
申请号：US14403577
申请日：2013-04-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Irina Lyulina , Franciscus Godefridus Casper Bijnen , Remi Daniel Marie Edart , Antoine Gaston Marie Kiers , Michael Kubis
CPC classification number: G03F7/70141 , G01B11/14 , G03F7/70633 , G03F9/7046
Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.
Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。
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