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公开(公告)号：US10514620B2
公开(公告)日：2019-12-24
申请号：US16315100
申请日：2017-08-14
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Franciscus Godefridus Casper Bijnen , Simon Gijsbert Josephus Mathijssen , Vassili Demergis , Edo Maria Hulsebos
IPC: G03F9/00
Abstract: A method of determining the position of an alignment mark on a substrate, the alignment mark having first and second segment, the method including illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal has a first component received during illumination of the first segment only, a second component received during illumination of the second segment only, and a third component received during simultaneous illumination of both segments. The positions of the segments are determined using the first component, the second component and the third component of the alignment signal.
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公开(公告)号：US11966166B2
公开(公告)日：2024-04-23
申请号：US17377648
申请日：2021-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
CPC classification number: G03F7/70425 , G03F7/705 , G03F7/70516 , G03F7/70633 , G03F7/70683 , G03F7/7085 , G03F9/7046 , G03F9/7088 , G06F30/39
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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公开(公告)号：US10474045B2
公开(公告)日：2019-11-12
申请号：US15737990
申请日：2016-06-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Patricius Aloysius Jacobus Tinnemans , Alexander Ypma , Irina Anatolievna Lyulina , Edo Maria Hulsebos , Hakki Ergün Cekli , Xing Lan Liu , Loek Johannes Petrus Verhees , Victor Emanuel Calado , Leon Paul Van Dijk
Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
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公开(公告)号：US11029610B2
公开(公告)日：2021-06-08
申请号：US16650520
申请日：2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van T Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20190235391A1
公开(公告)日：2019-08-01
申请号：US16229009
申请日：2018-12-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper BIJNEN , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
CPC classification number: G03F7/7085 , G03F7/70425 , G03F7/70516 , G03F7/70633 , G03F7/70683 , G03F9/7046 , G03F9/7088 , G06F17/5068
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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Patent Agency Ranking
公开(公告)号：US10962887B2
公开(公告)日：2021-03-30
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US12032305B2
公开(公告)日：2024-07-09
申请号：US17922593
申请日：2021-05-11
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F9/7092 , G03F9/7076 , G03F7/70625
Abstract: A method of, and associated apparatuses for, performing a position measurement on an alignment mark including at least a first periodic structure having a direction of periodicity along a first direction. The method includes obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting uses one of a modulation fit or a background envelope periodic fit.
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公开(公告)号：US11927892B2
公开(公告)日：2024-03-12
申请号：US17784424
申请日：2020-11-17
Applicant: ASML Netherlands B.V.
IPC: G03F9/00
CPC classification number: G03F9/7088 , G03F9/7076 , G03F9/7084 , G03F9/7092
Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.
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公开(公告)号：US11181836B2
公开(公告)日：2021-11-23
申请号：US16623912
申请日：2018-05-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Edo Maria Hulsebos , Patricius Aloysius Jacobus Tinnemans , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.
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公开(公告)号：US10901326B2
公开(公告)日：2021-01-26
申请号：US16808589
申请日：2020-03-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Edo Maria Hulsebos , Patricius Aloysius Jacobus Tinnemans , Ralph Brinkhof , Pieter Jacob Heres , Jorn Kjeld Lucas , Loek Johannes Petrus Verhees , Ingrid Margaretha Ardina Van Donkelaar , Franciscus Godefridus Casper Bijnen
Abstract: In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.
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