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    Method and apparatus for adaptive alignment
    11.
    发明授权
    Method and apparatus for adaptive alignment 有权

    公开(公告)号：US11308635B2

    公开(公告)日：2022-04-19

    申请号：US16657897

    申请日：2019-10-18

    Applicant: ASML Netherlands B.V.

    Inventor： Wei Fang ,  Lingling Pu

    IPC: G06T7/33 ,  G06T7/73 ,  G06T7/13 ,  G06T7/00 ,  H01L21/67 ,  H01L21/66

    Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

    Inspection method and system
    12.
    发明授权
    Inspection method and system 有权

    公开(公告)号：US11250559B2

    公开(公告)日：2022-02-15

    申请号：US16895412

    申请日：2020-06-08

    Applicant: ASML Netherlands B.V.

    Inventor： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

    IPC: G06K9/00 ,  G06T7/00 ,  G06K9/46

    Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

    Cascade defect inspection
    14.
    发明授权
    Cascade defect inspection 有权

    公开(公告)号：US11861818B2

    公开(公告)日：2024-01-02

    申请号：US17723322

    申请日：2022-04-18

    Applicant: ASML Netherlands B.V.

    Inventor： Zhichao Chen ,  Wei Fang

    IPC: G06T7/00 ,  G01N21/95

    CPC classification number: G06T7/0004 ,  G01N21/9501 ,  G06T2207/30148

    Abstract: A defect inspection system is disclosed. According to certain embodiments, the system includes a memory storing instructions implemented as a plurality of modules. Each of the plurality of modules is configured to detect defects having a different property. The system also includes a controller configured to cause the computer system to: receive inspection data representing an image of a wafer; input the inspection data to a first module of the plurality of modules, the first module outputs a first set of points of interests (POIs) having a first property; input the first set of POIs to a second module of the plurality of modules, the second module output a second set of POIs having the second property; and report that the second set of POIs as defects having both the first property and the second property.

    Pattern grouping method based on machine learning
    15.
    发明授权
    Pattern grouping method based on machine learning 有权

    公开(公告)号：US11756182B2

    公开(公告)日：2023-09-12

    申请号：US16508167

    申请日：2019-07-10

    Applicant: ASML Netherlands B.V.

    Inventor： Wei Fang ,  Zhaohui Guo ,  Ruoyu Zhu ,  Chuan Li

    IPC: G06T7/00 ,  G06F18/24

    CPC classification number: G06T7/001 ,  G06F18/24 ,  G06T2207/20081 ,  G06T2207/30148

    Abstract: A pattern grouping method may include receiving an image of a first pattern, generating a first fixed-dimensional feature vector using trained model parameters applying to the received image, and assigning the first fixed-dimensional feature vector a first bucket ID. The method may further include creating a new bucket ID for the first fixed-dimensional feature vector in response to determining that the first pattern does not belong to one of a plurality of buckets corresponding to defect patterns, or mapping the first fixed-dimensional feature vector to the first bucket ID in response to determining that the first pattern belongs to one of a plurality of buckets corresponding to defect patterns.

    Low dose charged particle metrology system
    16.
    发明授权
    Low dose charged particle metrology system 有权

    公开(公告)号：US11175590B2

    公开(公告)日：2021-11-16

    申请号：US16755127

    申请日：2018-10-05

    Applicant: ASML Netherlands B.V.

    Inventor： Fei Wang ,  Wei Fang ,  Kuo-Shih Liu

    IPC: G03F7/20 ,  G01B15/00 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66

    Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

    System and method for defect inspection using voltage contrast in a charged particle system
    19.
    发明授权
    System and method for defect inspection using voltage contrast in a charged particle system 有权

    公开(公告)号：US12191112B2

    公开(公告)日：2025-01-07

    申请号：US17786190

    申请日：2020-12-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Wei Fang ,  Zhengwei Zhou ,  Lingling Pu

    IPC: H01J37/24 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

    Abstract: A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

    In-die metrology methods and systems for process control
    20.
    发明授权
    In-die metrology methods and systems for process control 有权

    公开(公告)号：US12040187B2

    公开(公告)日：2024-07-16

    申请号：US17985087

    申请日：2022-11-10

    Applicant: ASML Netherlands B.V.

    Inventor： Lingling Pu ,  Wei Fang ,  Zhong-wei Chen

    IPC: H01L21/02 ,  G03F7/00 ,  G06F30/39 ,  H01J37/147 ,  H01J37/244

    CPC classification number: H01L21/02691 ,  G03F7/70625 ,  G03F7/70633 ,  G06F30/39 ,  H01J37/1471 ,  H01J37/244

    Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

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