摘要:
A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.
摘要:
A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.
摘要:
A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.
摘要:
A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.
摘要:
A batch processing system and method for chemical oxide removal (COR) is described. The batch processing system is configured to provide chemical treatment of a plurality of substrates, wherein each substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the batch processing system is configured to provide thermal treatment of a plurality of substrates, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
摘要:
A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chemical vapor deposition (PECVD) system for depositing the TERA layer on the substrate, an etching system for creating features in the TERA layer, and a processing subsystem for reducing the size of the features in the TERA layer.