Abstract:
Present invention relates to methods of preparing molybdenum oxide inks and molybdenum oxide films, and use of the molybdenum oxide films as hole-transporting layers in optoelectronic devices. The ink for forming a hybrid molybdenum (VI) oxide (MoO3) film on a substrate comprises an ammonium molybdate, at least one inorganic salt different from ammonium molybdate, and a solvent or a solvent mixture.
Abstract:
There is provided a sensing device for measuring a level of an analyte. The sensing device includes a sensing element configured to sense the analyte and produce an electrical output which is variable based on the level of the analyte sensed, a measurement circuit including a reference element for providing an electrical property, the measurement circuit being connected to the sensing element and configured to provide a measurement output signal based on the electrical property of the reference element and the electrical output of the sensing element, whereby the measurement output signal indicates the level of the analyte sensed with respect to the electrical property of the reference element. There is also provided a corresponding method of fabricating the sensing device.
Abstract:
Present invention relates to methods of preparing molybdenum oxide inks and molybdenum oxide films, and use of the molybdenum oxide films as hole-transporting layers in optoelectronic devices. The ink for forming a hybrid molybdenum (VI) oxide (MoO3) film on a substrate comprises an ammonium molybdate, at least one inorganic salt different from ammonium molybdate, and a solvent or a solvent mixture.
Abstract:
Various embodiments provide a method of forming an organic inverter including a first transistor and a second transistor. The method may include providing a substrate with a dielectric layer formed on top of the substrate; depositing a first semiconductor polymer layer on a first region of the dielectric layer; forming a first electrode and a second electrode on the first semiconductor polymer layer, thereby forming the first transistor located at the first region of the dielectric layer; forming a plurality of grooves on a surface of a second region of the dielectric layer; depositing a second semiconductor polymer layer on the second region of the dielectric layer; and forming a first electrode and a second electrode on the second semiconductor polymer layer, thereby forming the second transistor located at the second region of the dielectric layer.
Abstract:
The invention relates to dyes for dye-sensitized solar cells, and in particular, to perylene functionalized porphyrin dyes for dye-sensitized solar cells. The invention further relates to a dye molecule comprising perylene functionalized porphyrin moiety.
Abstract:
Present invention relates to methods of preparing molybdenum oxide inks and molybdenum oxide films, and use of the molybdenum oxide films as hole-transporting layers in optoelectronic devices. The ink for forming a hybrid molybdenum (VI) oxide (MoO3) film on a substrate comprises an ammonium molybdate, at least one inorganic salt different from ammonium molybdate, and a solvent or a solvent mixture.
Abstract:
The present disclosure relates to a catalyst for a metal air battery or fuel cell comprising a mixed metal oxide consisting of at least one lanthanide element and at least two different transition metal elements. The catalyst may further comprise a conducting additive. The present disclosure further provides an air electrode, metal air battery or fuel cell comprising the disclosed catalyst, and methods for forming the disclosed catalyst.
Abstract:
In various embodiments, a printed circuit arrangement may be provided. The printed circuit arrangement may include a processor circuit. The printed circuit arrangement may further include a printed main circuit arrangement in electrical connection with a first input node of the processor circuit. The printed main circuit arrangement may be configured to receive at least one input signal and generate a main circuit signal based on the at least one input signal after a first delay from receiving the at least one input signal. The printed circuit arrangement may further include a printed reference circuit arrangement in electrical connection with a second input node of the processor circuit. The printed reference circuit arrangement may be configured to receive a further input signal, may have a second delay and may be configured such that the second delay adapts to the first delay.