公开(公告)号：US20110303899A1

公开(公告)日：2011-12-15

申请号：US13158186

申请日：2011-06-10

申请人： Deenesh Padhi ,  Jacob Janzen ,  Shahid Shaikh ,  Bok Hoen Kim ,  Barry Chin

发明人： Deenesh Padhi ,  Jacob Janzen ,  Shahid Shaikh ,  Bok Hoen Kim ,  Barry Chin

IPC分类号： H01L21/20 ,  H01L29/16

CPC分类号： H01L21/0262 ,  H01J37/32091 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L23/373 ,  H01L29/66742 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention are directed toward the deposition of Graphene on a semiconductor substrate. In some embodiments, these processes can occur at low temperature levels during a back end of the line process. For example, Graphene can be deposited in a CVD reactor at a processing temperature that is below 600° C. to protect previously deposited layers that may be susceptible to sustained higher temperatures. Graphene deposition can include the deposition of an underlayer (e.g., cobalt) followed by the flow of a carbon precursor (e.g., acetylene) at the processing temperature. Graphene can then be synthesized with during cooling, an RTP cure, and/or a UV cure.

摘要翻译： 本发明的实施方案涉及在半导体衬底上沉积石墨烯。 在一些实施例中，这些过程可以在线路过程的后端期间以低温水平发生。 例如，石墨烯可以在低于600℃的处理温度下沉积在CVD反应器中，以保护可能易受持续较高温度影响的预先沉积的层。 石墨烯沉积可以包括在加工温度下沉积底层（例如钴），然后沉积碳前体（例如乙炔）。 然后可以在冷却，RTP固化和/或UV固化期间合成石墨烯。

公开(公告)号：US08349741B2

公开(公告)日：2013-01-08

申请号：US13455916

申请日：2012-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施方案中，提供了形成复合无定形碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中， 用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

公开(公告)号：US08227352B2

公开(公告)日：2012-07-24

申请号：US13093679

申请日：2011-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：US20060069279A1

公开(公告)日：2006-03-30

申请号：US10955550

申请日：2004-09-30

申请人： Edouard Mamedov ,  Kathleen Bethke ,  Shahid Shaikh ,  Armando Araujo ,  Neeta Kulkarni

发明人： Edouard Mamedov ,  Kathleen Bethke ,  Shahid Shaikh ,  Armando Araujo ,  Neeta Kulkarni

IPC分类号： C07C253/26

CPC分类号： C07C253/24 ,  C07C253/26 ,  Y02P20/142 ,  C07C255/03

摘要： A process for the vapor phase ammoxidation of alkanes and olefins with a catalyst of the general empirical formula: VSbaMbQcOx wherein M is at least one element selected from magnesium, aluminum, zirconium, silicon, hafnium, titanium and niobium, Q is at least one element selected from rhenium, tungsten, molybdenum, tantalum, manganese, phosphorus, cerium, tin, boron, scandium, bismuth, gallium, indium, iron, chromium, lanthanum, yttrium, zinc, cobalt, nickel, cadmium, copper, strontium, barium, calcium, silver, potassium, sodium and cesium, a is 0.5 to 20, b is 2 to 50, c is 0 to 10 and x is determined by the valence requirements of the elements present. The process has a co-feed of gaseous carbon dioxide with an alkane (paraffin) and/or alkene, ammonia and an oxygen-containing gas which react in the presence of the catalyst to form a nitrile and by-products.

摘要翻译： 用烷烃和烯烃进行气相氨氧化的方法，其催化剂具有一般经验性的方法