公开(公告)号：US5174881A

公开(公告)日：1992-12-29

申请号：US724488

申请日：1991-06-28

申请人： Masanobu Iwasaki ,  Hiromi Itoh ,  Akira Tokui ,  Katsuyoshi Mitsui ,  Katsuhiro Tsukamoto

发明人： Masanobu Iwasaki ,  Hiromi Itoh ,  Akira Tokui ,  Katsuyoshi Mitsui ,  Katsuhiro Tsukamoto

IPC分类号： C23C14/02 ,  C23C14/56 ,  C23C16/02 ,  C23C16/54

CPC分类号： C23C16/54 ,  C23C14/022 ,  C23C14/568 ,  C23C16/0236

摘要： A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.

摘要翻译： 一种用于去除半导体衬底表面上的天然生长的氧化物膜和污染物，然后在清洁表面上形成薄膜的方法和设备。 将半导体基板放置在预处理室中，然后将氯化氢气体引入室中。 然后，在200℃〜700℃的温度下加热半导体衬底，用紫外线照射半导体衬底的表面，由此可以除去半导体衬底上的天然生长的氧化膜和其它污染物。 然后，通过CVD法或溅射法在半导体衬底的清洁表面上形成薄膜。 根据该方法，可以在低温下从半导体基板的表面去除天然氧化膜和其它污染物，并且可以在清洁的表面上形成薄膜。 结果，可以将半导体衬底和薄膜之间的界面结构控制在优选的状态。

公开(公告)号：US4702796A

公开(公告)日：1987-10-27

申请号：US931583

申请日：1986-11-14

申请人： Masayuki Nakajima ,  Shinichi Sato ,  Akira Tokui ,  Akira Kawai ,  Masao Nagatomo ,  Hiroji Ozaki

发明人： Masayuki Nakajima ,  Shinichi Sato ,  Akira Tokui ,  Akira Kawai ,  Masao Nagatomo ,  Hiroji Ozaki

IPC分类号： H01L21/74 ,  H01L21/8242 ,  H01L23/556 ,  H01L21/04 ,  B44C1/22 ,  H01L21/22 ,  H01L21/306

CPC分类号： H01L27/10844 ,  H01L21/74 ,  H01L23/556 ,  H01L2224/16245 ,  H01L2224/48247 ,  Y10S438/965

摘要： The present invention is a method for fabricating a semiconductor device, wherein impurity is selectively diffused to surround a region (7) of a second conductivity type as a bit line formed on a semiconductor substrate (1), thereby forming an impurity diffused region (9) of a first conductivity type having high density and, by extending the impurity diffused region (9) in the element separating step to form a high density region of the first conductivity type having high density.

摘要翻译： 本发明是一种制造半导体器件的方法，其中杂质被选择性扩散以包围形成在半导体衬底（1）上的位线的第二导电类型的区域（7），从而形成杂质扩散区域（9 ），并且通过在元件分离步骤中扩展杂质扩散区域（9）以形成具有高密度的第一导电类型的高密度区域。