-
公开(公告)号：US5407867A
公开(公告)日：1995-04-18
申请号：US948528
申请日：1992-09-22
IPC分类号： C23C14/02 , C23C14/56 , C23C16/02 , C23C16/54 , H01L21/465
CPC分类号： C23C14/568 , C23C14/022 , C23C16/0236 , C23C16/54 , Y10S438/913
摘要： A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.
摘要翻译： 一种用于去除半导体衬底表面上的天然生长的氧化物膜和污染物，然后在清洁表面上形成薄膜的方法和设备。 将半导体基板放置在预处理室中，然后将氯化氢气体引入室中。 然后，在200℃〜700℃的温度下加热半导体衬底，用紫外线照射半导体衬底的表面，由此可以除去半导体衬底上的天然生长的氧化膜和其它污染物。 然后，通过CVD法或溅射法在半导体衬底的清洁表面上形成薄膜。 根据该方法，可以在低温下从半导体基板的表面去除天然氧化膜和其它污染物，并且可以在清洁的表面上形成薄膜。 结果，可以将半导体衬底和薄膜之间的界面结构控制在优选的状态。
-
2.发明授权
公开(公告)号：US5174881A
公开(公告)日：1992-12-29
申请号：US724488
申请日：1991-06-28
CPC分类号： C23C16/54 , C23C14/022 , C23C14/568 , C23C16/0236
摘要： A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.
摘要翻译： 一种用于去除半导体衬底表面上的天然生长的氧化物膜和污染物，然后在清洁表面上形成薄膜的方法和设备。 将半导体基板放置在预处理室中，然后将氯化氢气体引入室中。 然后，在200℃〜700℃的温度下加热半导体衬底，用紫外线照射半导体衬底的表面，由此可以除去半导体衬底上的天然生长的氧化膜和其它污染物。 然后，通过CVD法或溅射法在半导体衬底的清洁表面上形成薄膜。 根据该方法，可以在低温下从半导体基板的表面去除天然氧化膜和其它污染物，并且可以在清洁的表面上形成薄膜。 结果，可以将半导体衬底和薄膜之间的界面结构控制在优选的状态。
-
3.发明授权Method for pretreating semiconductor substrate by photochemically removing native oxide 失效通过光化学去除天然氧化物来预处理半导体衬底的方法
公开(公告)号：US5470799A
公开(公告)日：1995-11-28
申请号：US342045
申请日：1989-04-24
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/31 , H01L21/00 , H01L21/02 , H01L21/463
CPC分类号： H01L21/02046 , Y10S438/906 , Y10S438/974
摘要： The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.
摘要翻译： 本发明提供一种去除附着在硅半导体衬底的表面上的天然气膜或污染物的方法。 将具有附着在其上的天然氧化物膜或污染物的半导体衬底放置在室中。 然后，将HCl气体引入室中。 将半导体衬底在200℃至700℃的温度范围内加热，同时将紫外线照射到腔室中。 根据该方法，通过光和热能的协同效应促进天然氧化物与HCl气体的反应。 因此，借助光能可以在较低的温度下去除天然氧化物膜或污染物。
-
公开(公告)号：US5945716A
公开(公告)日：1999-08-31
申请号：US971041
申请日：1992-11-03
IPC分类号： H01L21/301 , H01L21/3205 , H01L21/74 , H01L21/78 , H01L23/52 , H01L29/76 , H01L29/94
CPC分类号： H01L21/78 , H01L21/743
摘要： On a surface of a semiconductor substrate within a device forming region, a MOS transistor including a gate electrode, gate oxide film and source.cndot.drain is formed. An insulating layer is formed on the surface of the semiconductor substrate. In an opening of the insulating layer above the source.cndot.drain, a tungsten plug is formed. At a dicing line portion, the insulating layer has a trench portion. The trench portion is formed to surround the device forming region. A tungsten street having a top surface continuous to the top surface of the insulating layer is formed in the trench. By this semiconductor device, short-circuit between bonding pads and the like can be prevented, and the reliability can be improved.
摘要翻译： 在器件形成区域内的半导体衬底的表面上，形成包括栅电极，栅极氧化膜和源极的MOS晶体管。 绝缘层形成在半导体衬底的表面上。 在源极上方的绝缘层的开口中，形成钨插塞。 在切割线部分，绝缘层具有沟槽部分。 沟槽部形成为围绕器件形成区域。 在沟槽中形成具有与绝缘层的顶表面连续的顶表面的钨街。 通过该半导体装置，能够防止接合焊盘之间的短路等，能够提高可靠性。
-
5.发明授权Peripheral structure of a chip as a semiconductor device, and manufacturing method thereof 有权作为半导体器件的芯片的外围结构及其制造方法公开(公告)号：US06211070B1
公开(公告)日：2001-04-03
申请号：US09329494
申请日：1999-06-10
IPC分类号： H01L214763
CPC分类号： H01L21/78 , H01L21/743
摘要： On a surface of a semiconductor substrate within a device forming region, a MOS transistor including a gate electrode, gate oxide film and source•drain is formed. An insulating layer is formed on the surface of the semiconductor substrate. In an opening of the insulating layer above the source•drain, a tungsten plug is formed. At a dicing line portion, the insulating layer has a trench portion. The trench portion is formed to surround the device forming region. A tungsten street having a top surface continuous to the top surface of the insulating layer is formed in the trench. By this semiconductor device, short-circuit between bonding pads and the like can be prevented, and the reliability can be improved.
摘要翻译： 在器件形成区域内的半导体衬底的表面上形成包括栅电极，栅极氧化膜和源极的MOS晶体管。 绝缘层形成在半导体衬底的表面上。 在源极上方的绝缘层的开口中，形成钨插塞。 在切割线部分，绝缘层具有沟槽部分。 沟槽部形成为围绕器件形成区域。 在沟槽中形成具有与绝缘层的顶表面连续的顶表面的钨街。 通过该半导体装置，能够防止接合焊盘之间的短路等，能够提高可靠性。
-
公开(公告)号：US5429991A
公开(公告)日：1995-07-04
申请号：US74516
申请日：1993-06-11
申请人： Masanobu Iwasaki , Hiromi Itoh
发明人： Masanobu Iwasaki , Hiromi Itoh
IPC分类号： C23C16/02 , C23C16/08 , C23C16/54 , H01L21/285 , H01L21/3205
CPC分类号： C23C16/0272 , C23C16/08 , C23C16/54 , H01L21/28556 , H01L21/32051
摘要： A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.
摘要翻译： 一种形成用于半导体器件的薄膜的方法，用于通过化学气相沉积在设置在基板上的中间层上形成金属薄膜包括以下步骤：通过引入中间层的表面来引入卤化物气体 用于在中间层的表面上形成薄膜的金属，通过将硅烷系气体引入到中间层的活化表面上，在中间层的表面上形成核，并将卤化物气体和还原气体引入到 中间层的表面形成有核，从而将金属薄膜沉积在中间层的表面上。
-
公开(公告)号：US5240505A
公开(公告)日：1993-08-31
申请号：US561631
申请日：1990-08-02
申请人： Masanobu Iwasaki , Hiromi Itoh
发明人： Masanobu Iwasaki , Hiromi Itoh
IPC分类号： C23C16/02 , C23C16/08 , C23C16/54 , H01L21/285 , H01L21/3205
CPC分类号： C23C16/0272 , C23C16/08 , C23C16/54 , H01L21/28556 , H01L21/32051
摘要： A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.
摘要翻译： 一种形成用于半导体器件的薄膜的方法，用于通过化学气相沉积在设置在基板上的中间层上形成金属薄膜包括以下步骤：通过引入中间层的表面来引入卤化物气体 用于在中间层的表面上形成薄膜的金属，通过将硅烷系气体引入到中间层的活化表面上，在中间层的表面上形成核，并将卤化物气体和还原气体引入到 中间层的表面形成有核，从而将金属薄膜沉积在中间层的表面上。
-
公开(公告)号：US06602725B2
公开(公告)日：2003-08-05
申请号：US09962199
申请日：2001-09-26
IPC分类号： H01L2166
CPC分类号： H01L21/31053 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes a semiconductor wafer which is partitioned into chip regions by scribe line area. A device pattern is formed in the device forming region included in the chip region. A monitor pattern is formed from the same material as that of the device patterns in the chip region simultaneously with the device pattern. An interlayer insulating film is formed in the chip region so as to cover the device pattern and the monitor pattern. The monitor pattern is used to measure the thickness of the interlayer insulating film.
-
公开(公告)号：US20070270086A1
公开(公告)日：2007-11-22
申请号：US11878030
申请日：2007-07-20
申请人： Masanobu Iwasaki , Yoshio Hayashide
发明人： Masanobu Iwasaki , Yoshio Hayashide
IPC分类号： B24C1/08
CPC分类号： B24B37/04 , B24B57/02 , B24C11/005
摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.
-
公开(公告)号：US20070264908A1
公开(公告)日：2007-11-15
申请号：US11878028
申请日：2007-07-20
申请人： Masanobu Iwasaki , Yoshio Hayashide
发明人： Masanobu Iwasaki , Yoshio Hayashide
IPC分类号： B24B1/00
CPC分类号： B24B37/04 , B24B57/02 , B24C11/005
摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.022 秒)