公开(公告)号：US4763182A

公开(公告)日：1988-08-09

申请号：US941216

申请日：1986-12-12

申请人： Hiroji Ozaki ,  Shinichi Sato ,  Akira Tokui ,  Akira Kawai ,  Masayuki Nakajima ,  Masao Nagatomo

发明人： Hiroji Ozaki ,  Shinichi Sato ,  Akira Tokui ,  Akira Kawai ,  Masayuki Nakajima ,  Masao Nagatomo

IPC分类号： H01L27/10 ,  G11C11/34 ,  H01L21/74 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L27/10844 ,  H01L21/74 ,  H01L27/10805 ,  H01L29/0847 ,  H01L29/1083

摘要： A semiconductor memory device comprises a first conductivity type semiconductor substrate (1) formed thereon with a charge storage region (5) and a second conductivity type region (6) serving as a bit line, and first conductivity type highly concentrated regions (8, 11) higher in concentration than the semiconductor substrate (1) at least by one digit are formed to enclose the charge storage region (5) and the bit line region (6) respectively. Thus, potential barriers against electrons can be defined in interfaces between the highly concentrated region (8) and the charge storage region (5) and between the highly concentrated region (11) and the bit line region (6), thereby to prevent malfunction caused by incidence of radioactive rays such as alpha rays.

摘要翻译： 半导体存储器件包括形成有电荷存储区域（5）的第一导电型半导体衬底（1）和用作位线的第二导电类型区域（6），以及第一导电型高浓度区域（8,11 形成浓度高于半导体衬底（1）的至少一位数，以分别包围电荷存储区域（5）和位线区域（6）。 因此，可以在高度集中区域（8）和电荷存储区域（5）之间以及高度集中区域（11）和位线区域（6）之间的界面中限定抵抗电子的势垒，从而防止故障 通过放射线如α射线的发生。

公开(公告)号：US4956310A

公开(公告)日：1990-09-11

申请号：US195672

申请日：1988-10-05

申请人： Akira Tokui ,  Shinichi Sato ,  Akira Kawai ,  Masayuki Nakajima ,  Hiroji Ozaki ,  Masao Nagatomo

发明人： Akira Tokui ,  Shinichi Sato ,  Akira Kawai ,  Masayuki Nakajima ,  Hiroji Ozaki ,  Masao Nagatomo

IPC分类号： H01L27/10 ,  G11C11/34 ,  H01L21/74 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L27/10844 ,  H01L21/74 ,  H01L27/10805 ,  H01L29/0847 ,  H01L29/1083

摘要： A semiconductor memory device in accordance with the present invention comprises: a semiconductor substrate (1) of a first conductivity type; a charge storage region (6) and a bit line region (7) of a second conductivity type formed on a main surface of the substrate; highly doped regions (12a, 12b) of the first conductivity type formed respectively contiguous to only the bottom boundaries of the charge storage region (6) and the bit line region (7).

摘要翻译： 根据本发明的半导体存储器件包括：第一导电类型的半导体衬底（1）; 形成在基板的主表面上的第二导电类型的电荷存储区域（6）和位线区域（7） 第一导电类型的高掺杂区域（12a，12b）分别形成为仅与电荷存储区域（6）和位线区域（7）的底部边界邻接。

公开(公告)号：US4702796A

公开(公告)日：1987-10-27

申请号：US931583

申请日：1986-11-14

申请人： Masayuki Nakajima ,  Shinichi Sato ,  Akira Tokui ,  Akira Kawai ,  Masao Nagatomo ,  Hiroji Ozaki

发明人： Masayuki Nakajima ,  Shinichi Sato ,  Akira Tokui ,  Akira Kawai ,  Masao Nagatomo ,  Hiroji Ozaki

IPC分类号： H01L21/74 ,  H01L21/8242 ,  H01L23/556 ,  H01L21/04 ,  B44C1/22 ,  H01L21/22 ,  H01L21/306

CPC分类号： H01L27/10844 ,  H01L21/74 ,  H01L23/556 ,  H01L2224/16245 ,  H01L2224/48247 ,  Y10S438/965

摘要： The present invention is a method for fabricating a semiconductor device, wherein impurity is selectively diffused to surround a region (7) of a second conductivity type as a bit line formed on a semiconductor substrate (1), thereby forming an impurity diffused region (9) of a first conductivity type having high density and, by extending the impurity diffused region (9) in the element separating step to form a high density region of the first conductivity type having high density.

摘要翻译： 本发明是一种制造半导体器件的方法，其中杂质被选择性扩散以包围形成在半导体衬底（1）上的位线的第二导电类型的区域（7），从而形成杂质扩散区域（9 ），并且通过在元件分离步骤中扩展杂质扩散区域（9）以形成具有高密度的第一导电类型的高密度区域。

公开(公告)号：US5178682A

公开(公告)日：1993-01-12

申请号：US687154

申请日：1991-04-18

申请人： Katsuhiro Tsukamoto ,  Akira Tokui

发明人： Katsuhiro Tsukamoto ,  Akira Tokui

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/306 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02043 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/0231 ,  H01L21/02312 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185

摘要： A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300.degree. C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperatures of 200.degree.-700.degree. C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor with the thin layer of material formed thereon having a well-controlled, well organized interface between them.

摘要翻译： 公开了一种用于制造半导体器件的方法和装置，该半导体器件具有形成在半导体衬底上的薄层材料，其间具有大大改善的界面。 在暴露于紫外光的情况下，在臭氧气体存在下将硅衬底加热至约300℃的温度。 通过这种方法，可能存在于硅衬底表面上的有机污染物通过氧化而消散，另一方面在衬底表面上形成薄氧化膜。 然后在其上涂覆有薄氧化物膜的硅衬底在HCl气体存在下在200℃〜700℃的温度下照射到UV光以将氧化膜从衬底表面剥离，从而暴露清洁的衬底 表面。 最后，硅衬底的HCl清洗表面涂覆有诸如单晶硅的薄层材料，而不暴露清洁的衬底表面。 该方法提供了半导体，其上形成有薄层材料，其间具有良好控制的良好组织的界面。

公开(公告)号：US5384218A

公开(公告)日：1995-01-24

申请号：US37389

申请日：1993-03-26

申请人： Akira Tokui ,  Maria O. DeBeeck

发明人： Akira Tokui ,  Maria O. DeBeeck

IPC分类号： G03F1/38 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/703 ,  G03F1/38 ,  G03F7/70283

摘要： A photomask for projecting a transfer pattern onto a wafer having a plurality of regions with different surface levels includes a transparent substrate; a shielding member on the transparent substrate having a plurality of patterns for projection onto respective regions of the wafer; and an optical-path-length varying layer on at least one of the patterns corresponding to a region of the wafer other than a reference region of the wafer for changing the optical path length of light transmitted through the pattern by a length corresponding to the difference in surface level between the corresponding region and the reference region of the wafer. A pattern transfer method using such a photomask includes directing light onto the photomask; effecting a change in the position of the apparent object-side image surface for at least one pattern including the optical-path-length varying layer; and simultaneously forming on surfaces of the wafer regions image formation planes respectively corresponding to at least two patterns by image projection using light transmitted through the patterns.

摘要翻译： 用于将转印图案投影到具有不同表面水平的多个区域的晶片上的光掩模包括透明基板; 所述透明基板上的屏蔽部件具有多个用于投影到所述晶片的各个区域上的图案; 以及至少一个图案上的光路长度变化层，其对应于晶片以外的区域，而不是晶片的参考区域，用于将透过该图案的光的光路长度改变为对应于该差异的长度 在晶片的对应区域和参考区域之间的表面电平。 使用这种光掩模的图案转印方法包括将光引导到光掩模上; 对于包括光路长度可变层的至少一个图案，影响表观物体侧图像表面的位置的变化; 并且通过使用透过图案的光进行图像投影同时形成分别对应于至少两种图案的晶片区域图像形成面的表面。

公开(公告)号：US5270796A

公开(公告)日：1993-12-14

申请号：US786768

申请日：1991-11-01

申请人： Akira Tokui ,  Tetsuro Hanawa

发明人： Akira Tokui ,  Tetsuro Hanawa

IPC分类号： G01B11/30 ,  G01N21/956 ,  G03F1/26 ,  G03F1/84 ,  G01B11/00

CPC分类号： G03F1/84 ,  G01N21/95607 ,  G03F1/30

摘要： An apparatus for inspecting a phase shift mask includes a light source for irradiating a pattern of a phase shift mask including a light shield member and a phase member, a phase difference detector for generating from light transmitted through the phase shift mask a phase signal including the phase difference created by the phase member, a reference signal generator for generating a reference signal, and a calculation section for detecting a defect in the phase member of the phase shift mask by comparing the phase signal with the reference signal. The reference signal may be generated from a reference mask having the same pattern as that of the phase shift pattern or from CAD data for the formation of the pattern of the phase shift mask.

摘要翻译： 用于检查相移掩模的装置包括用于照射包括遮光部件和相位部件的相移掩模的图案的光源，相位差检测器，用于通过相移掩模传输的光从包括 由相位构件产生的相位差，用于产生参考信号的参考信号发生器，以及用于通过将相位信号与参考信号进行比较来检测相移掩模的相位成员中的缺陷的计算部分。 参考信号可以从具有与相移模式相同的图案的参考掩模或者用于形成相移掩模的图形的CAD数据生成。

公开(公告)号：US5407867A

公开(公告)日：1995-04-18

申请号：US948528

申请日：1992-09-22

申请人： Masanobu Iwasaki ,  Hiromi Itoh ,  Akira Tokui ,  Katsuyoshi Mitsui ,  Katsuhiro Tsukamoto

发明人： Masanobu Iwasaki ,  Hiromi Itoh ,  Akira Tokui ,  Katsuyoshi Mitsui ,  Katsuhiro Tsukamoto

IPC分类号： C23C14/02 ,  C23C14/56 ,  C23C16/02 ,  C23C16/54 ,  H01L21/465

CPC分类号： C23C14/568 ,  C23C14/022 ,  C23C16/0236 ,  C23C16/54 ,  Y10S438/913

摘要： A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.

摘要翻译： 一种用于去除半导体衬底表面上的天然生长的氧化物膜和污染物，然后在清洁表面上形成薄膜的方法和设备。 将半导体基板放置在预处理室中，然后将氯化氢气体引入室中。 然后，在200℃〜700℃的温度下加热半导体衬底，用紫外线照射半导体衬底的表面，由此可以除去半导体衬底上的天然生长的氧化膜和其它污染物。 然后，通过CVD法或溅射法在半导体衬底的清洁表面上形成薄膜。 根据该方法，可以在低温下从半导体基板的表面去除天然氧化膜和其它污染物，并且可以在清洁的表面上形成薄膜。 结果，可以将半导体衬底和薄膜之间的界面结构控制在优选的状态。

公开(公告)号：US5158861A

公开(公告)日：1992-10-27

申请号：US501568

申请日：1990-03-30

申请人： Akira Tokui ,  Masahiro Yoneda

发明人： Akira Tokui ,  Masahiro Yoneda

IPC分类号： G03F7/26 ,  G03F7/38 ,  H01L21/027

CPC分类号： G03F7/38

摘要： A method of forming a minute pattern with controlled resist profile uses a chemically amplifying type resist and deep UV rays. Microposit SAL601-ER7 is applied on a silicon substrate, to form a resist film of the resist on the silicon substrate. The resist film is selectively irradiated with KrF excimer laser beam by using a photomask. Thereafter, an electric field directed vertically downward is applied to the resist film while the resist film is heated. According to this method, H.sup.+ ions which are a catalyst for cross linking generated in the resist film move vertically downward, so that diffusion of the H.sup.+ ions in the lateral direction during heating can be prevented. Consequently, negative minute patterns having sidewalls formed vertical to the substrate can be provided.

摘要翻译： 用受控抗蚀剂轮廓形成微小图案的方法使用化学放大型抗蚀剂和深紫外线。 将微孔SAL601-ER7施加在硅衬底上，以在硅衬底上形成抗蚀剂的抗蚀剂膜。 通过使用光掩模，用KrF准分子激光束选择性地照射抗蚀剂膜。 此后，在抗蚀剂膜被加热的同时，向抗蚀剂膜施加垂直向下的电场。 根据该方法，作为在抗蚀剂膜中产生的交联催化剂的H +离子垂直向下移动，从而可以防止在加热期间H +离子在横向上的扩散。 因此，可以提供具有垂直于衬底的侧壁的负微小图案。

公开(公告)号：US5028560A

公开(公告)日：1991-07-02

申请号：US317710

申请日：1989-03-01

申请人： Katsuhiro Tsukamoto ,  Akira Tokui

发明人： Katsuhiro Tsukamoto ,  Akira Tokui

IPC分类号： H01L21/20 ,  H01L21/306 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02043 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/0231 ,  H01L21/02312 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185 ,  Y10S148/017 ,  Y10S438/909 ,  Y10S438/974

摘要： A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300.degree. C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperature of 200.degree.-700.degree. C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor device with the thin layer of material formed thereon having a well-controlled, well-organized interface between them.

摘要翻译： 公开了一种用于制造半导体器件的方法和装置，该半导体器件具有形成在半导体衬底上的薄层材料，其间具有大大改善的界面。 在暴露于紫外光的情况下，在臭氧气体存在下将硅衬底加热至约300℃的温度。 通过这种方法，可能存在于硅衬底表面上的有机污染物通过氧化而消散，另一方面在衬底表面上形成薄氧化膜。 然后在其上涂覆有薄氧化物膜的硅衬底在HCl气体存在下在200℃〜700℃的温度下照射到UV光以将氧化膜从衬底表面剥离，从而暴露清洁的衬底 表面。 最后，硅衬底的HCl清洗表面涂覆有诸如单晶硅的薄层材料，而不暴露清洁的衬底表面。 该方法提供了半导体器件，其上形成有薄层材料，其间具有良好控制的，良好组织的界面。

公开(公告)号：US5470799A

公开(公告)日：1995-11-28

申请号：US342045

申请日：1989-04-24

申请人： Hiromi Itoh ,  Masanobu Iwasaki ,  Akira Tokui ,  Katsuhiro Tsukamoto

发明人： Hiromi Itoh ,  Masanobu Iwasaki ,  Akira Tokui ,  Katsuhiro Tsukamoto

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/00 ,  H01L21/02 ,  H01L21/463

CPC分类号： H01L21/02046 ,  Y10S438/906 ,  Y10S438/974

摘要： The present invention provides a method for removing a natural gas film or contaminant adhering on a surface of a silicon semiconductor substrate. The semiconductor substrate having the natural oxide film or contaminant adhered thereon is placed in a chamber. Then, a HCl gas is introduced into the chamber. The semiconductor substrate is heated at a temperature in the range of 200.degree..about.700.degree. C., while ultraviolet rays are irradiated into the chamber. According to the method, the reaction of the natural oxide with HCl gas is promoted by a synergistic effect of light and heat energy. Therefore, the natural oxide film or contaminant can be removed at a lower temperature with the help of the light energy.

摘要翻译： 本发明提供一种去除附着在硅半导体衬底的表面上的天然气膜或污染物的方法。 将具有附着在其上的天然氧化物膜或污染物的半导体衬底放置在室中。 然后，将HCl气体引入室中。 将半导体衬底在200℃至700℃的温度范围内加热，同时将紫外线照射到腔室中。 根据该方法，通过光和热能的协同效应促进天然氧化物与HCl气体的反应。 因此，借助光能可以在较低的温度下去除天然氧化物膜或污染物。