公开(公告)号：US5229615A

公开(公告)日：1993-07-20

申请号：US847766

申请日：1992-03-05

Applicant: Robert A. Brune ,  Dorsey T. Smith ,  Andrew M. Ray

Inventor： Robert A. Brune ,  Dorsey T. Smith ,  Andrew M. Ray

IPC: C23C14/48 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J2237/184 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/31703

Abstract: An end station for an ion implanter includes a loading station, a loadlock station, a vacuum chamber and a wafer handler within the vacuum chamber. The wafer handler includes a wafer-receiving platen assembly on the end of a multiple axis arm system wherein the arm system is capable of positioning the wafer for low and high angle of incidence implantation, rotating the wafer about an axis perpendicular to the wafer surface, and effecting scanning motion of the wafer along a straight line which intercepts the wafer tilt axis in any tilt position of the platen assembly. The invention further includes a loadlock including an upper element receiving wafers from the loading station and a lower element operable to position wafers for engagement by a transfer arm which transfers wafers from the loadlock to the wafer handler.

公开(公告)号：US4943728A

公开(公告)日：1990-07-24

申请号：US317225

申请日：1989-02-28

Applicant: Jerald P. Dykstra ,  Andrew M. Ray

Inventor： Jerald P. Dykstra ,  Andrew M. Ray

IPC: H01J37/09 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/09

Abstract: A defining aperture for an ion implanter in which wafers are implanted at high tilt angles, which aperture is configured to project a substantially circular beam pattern on the surface of the tilted wafer. One embodiment includes one or more movable aperture plates having elliptical apertures formed therein operating in conjunction with a fixed aperture plate having a circular aperture. Other embodiments include movable elliptical apertures, and a circular aperture rotatable about an axis perpendicular to the tilt axis of the wafer. Where an electron flood ring is used, one or more movable rings having elliptical apertures opening can be used.

公开(公告)号：US07417242B2

公开(公告)日：2008-08-26

申请号：US11390039

申请日：2006-03-27

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: G21F5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30405 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract translation: 提供了一种用于确定离子束到工件表面的位置和两个入射角的系统，装置和方法。 具有细长的第一和第二传感器的测量装置耦合到平移机构，其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器以与第一传感器成倾斜的角度延伸。 当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器可操作以确定位置和第一和第二角度 至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性。

公开(公告)号：US06989545B1

公开(公告)日：2006-01-24

申请号：US10886308

申请日：2004-07-07

Applicant: Robert D. Rathmell ,  Douglas A. Brown ,  Andrew M. Ray

Inventor： Robert D. Rathmell ,  Douglas A. Brown ,  Andrew M. Ray

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31703

Abstract: The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.

Abstract translation: 本发明通过获得垂直于扫描光束的平面的离子束的入射角和发散角来促进半导体器件的制造。 使用包括掩模和轮廓仪/传感器的发散检测器从入射离子束获得子束，然后在多个垂直位置测量束电流。 然后使用这些射束电流测量来提供垂直入射角，其提供用于表征离子束的垂直发散分布。 这些值可以由离子束产生机构使用，以对所产生的离子束或工件的位置执行调整，如果值表示偏离期望值。

公开(公告)号：US06953942B1

公开(公告)日：2005-10-11

申请号：US10944989

申请日：2004-09-20

Applicant: Michael A. Graf ,  Andrew M. Ray

Inventor： Michael A. Graf ,  Andrew M. Ray

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

Abstract translation: 本发明涉及以串联注入工艺将离子注入到工件中，以产生类似于工件的尺寸，形状和/或其它尺寸方面的扫描图案。 这提高了工件振荡通过的离子束的效率和产量，并不会显着“过冲”工件。 然而，扫描图案可能稍微大于工件，使得随着工件反向前后摆动的方向，工件的方向，速度和/或加速度的变化所引起的惯性效应在少量的“ 超调“。 这有助于以相对恒定的速度移动工件穿过离子束，这又促进了基本上更均匀的离子注入。

公开(公告)号：US06881967B1

公开(公告)日：2005-04-19

申请号：US10762821

申请日：2004-01-22

Applicant: Andrew M. Ray

Inventor： Andrew M. Ray

IPC: H01J37/147 ,  H01J37/317 ,  H01L21/265 ,  B32B3/02

CPC classification number: B32B3/02 ,  H01J2237/1501 ,  H01J2237/31701 ,  Y10S414/135 ,  Y10T428/21

Abstract: The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

公开(公告)号：US5091655A

公开(公告)日：1992-02-25

申请号：US660738

申请日：1991-02-25

Applicant: Jerald P. Dykstra ,  Andrew M. Ray ,  Monroe L. King

Inventor： Jerald P. Dykstra ,  Andrew M. Ray ,  Monroe L. King

IPC: H01J37/12 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/12 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04735 ,  H01J2237/1215 ,  H01J2237/151

Abstract: An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam enters an accelerator that both redeflects the once deflected ion beam and acceleratres the ions to a desired final energy. When the beam exits the accelerator it moves along a trajectory that impacts a workpiece. Ions making up the ion beam all impact the workpiece at a uniform, controlled impact angle.

公开(公告)号：US4929840A

公开(公告)日：1990-05-29

申请号：US317226

申请日：1989-02-28

Applicant: Jerald P. Dykstra ,  Andrew M. Ray

Inventor： Jerald P. Dykstra ,  Andrew M. Ray

IPC: C23C14/54 ,  C23C14/48 ,  H01J37/317 ,  H01L21/265 ,  H01L21/68

CPC classification number: H01J37/3171 ,  H01L21/68

Abstract: A method and apparatus for controlling the ion dose implanted in a semiconductor wafer. The wafer is received on a platen which is rotated in discrete steps by a stepper motor. With the wafer in an initial stationary position the dose accumulated by the wafer is measured. When the incremental measured dose equals the total dose to be implanted divided by a predetermined number of steps over which the implant is to be carried out, the motor is stepped one increment. This process is then repeated until the total desired dose is attained.