公开(公告)号：US20110301736A1

公开(公告)日：2011-12-08

申请号：US12793307

申请日：2010-06-03

申请人： Po-Feng Tsai ,  Yen-Di Tsen ,  Jo Fei Wang ,  Jong-I Mou

发明人： Po-Feng Tsai ,  Yen-Di Tsen ,  Jo Fei Wang ,  Jong-I Mou

IPC分类号： G06F17/50

CPC分类号： G05B17/02 ,  H01L22/20

摘要： A method of extending advanced process control (APC) models includes constructing an APC model table including APC model parameters of a plurality of products and a plurality of work stations. The APC model table includes empty cells and cells filled with existing APC model parameters. Average APC model parameters of the existing APC model parameters are calculated, and filled into the empty cells as initial values. An iterative calculation is performed to update the empty cells with updated values.

摘要翻译： 扩展先进过程控制（APC）模型的方法包括构建包括多个产品的APC模型参数和多个工作站的APC模型表。 APC模型表包括空单元格和填充有现有APC模型参数的单元格。 计算现有APC模型参数的平均APC模型参数，并作为初始值填充到空单元格中。 执行迭代计算以更新值更新空单元格。

公开(公告)号：US09727049B2

公开(公告)日：2017-08-08

申请号：US13603079

申请日：2012-09-04

申请人： Chia-Tong Ho ,  Po-Feng Tsai ,  Jung-Chang Chen ,  Tze-Liang Lee ,  Jo Fei Wang ,  Jong-I Mou ,  Chin-Hsiang Lin

发明人： Chia-Tong Ho ,  Po-Feng Tsai ,  Jung-Chang Chen ,  Tze-Liang Lee ,  Jo Fei Wang ,  Jong-I Mou ,  Chin-Hsiang Lin

IPC分类号： G06F19/00 ,  G05B19/4065

CPC分类号： G05B19/4065 ,  G05B2219/37252 ,  G05B2219/45031

摘要： The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.

公开(公告)号：US09026239B2

公开(公告)日：2015-05-05

申请号：US12793307

申请日：2010-06-03

申请人： Po-Feng Tsai ,  Yen-Di Tsen ,  Jo Fei Wang ,  Jong-I Mou

发明人： Po-Feng Tsai ,  Yen-Di Tsen ,  Jo Fei Wang ,  Jong-I Mou

IPC分类号： G06F19/00 ,  G05B11/01 ,  G05B17/02 ,  G05B15/00 ,  H01L21/66

CPC分类号： G05B17/02 ,  H01L22/20

摘要： A method of extending advanced process control (APC) models includes constructing an APC model table including APC model parameters of a plurality of products and a plurality of work stations. The APC model table includes empty cells and cells filled with existing APC model parameters. Average APC model parameters of the existing APC model parameters are calculated, and filled into the empty cells as initial values. An iterative calculation is performed to update the empty cells with updated values.

摘要翻译： 扩展先进过程控制（APC）模型的方法包括构建包括多个产品的APC模型参数和多个工作站的APC模型表。 APC模型表包括空单元格和填充有现有APC模型参数的单元格。 计算现有APC模型参数的平均APC模型参数，并作为初始值填充到空单元格中。 执行迭代计算以更新值更新空单元格。

公开(公告)号：US20140067324A1

公开(公告)日：2014-03-06

申请号：US13603079

申请日：2012-09-04

申请人： Chia-Tong Ho ,  Po-Feng Tsai ,  Jung-Chang Chen ,  Tze-Liang Lee ,  Jo Fei Wang ,  Jong-I Mou ,  Chin-Hsiang Lin

发明人： Chia-Tong Ho ,  Po-Feng Tsai ,  Jung-Chang Chen ,  Tze-Liang Lee ,  Jo Fei Wang ,  Jong-I Mou ,  Chin-Hsiang Lin

IPC分类号： G06F15/00

CPC分类号： G05B19/4065 ,  G05B2219/37252 ,  G05B2219/45031

摘要： The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.

摘要翻译： 本公开提供了用于工具状态监测的各种方法，包括用于实现这种监视的系统。 一种示例性方法包括：通过集成电路制造工艺工具接收与在晶片上执行的处理相关联的数据; 以及使用该数据来监视集成电路制造工艺工具的状态。 监视包括基于异常识别标准，异常过滤标准和异常阈值来评估数据，以确定数据是否满足报警阈值。 该方法还可以包括当数据满足报警阈值时发出报警。

公开(公告)号：US20110282885A1

公开(公告)日：2011-11-17

申请号：US12778855

申请日：2010-05-12

申请人： Po-Feng Tsai ,  Jin-Ning Sung ,  Yen-Di Tsen ,  Jo Fei Wang ,  Jong-I Mou

发明人： Po-Feng Tsai ,  Jin-Ning Sung ,  Yen-Di Tsen ,  Jo Fei Wang ,  Jong-I Mou

IPC分类号： G06F17/30

CPC分类号： G06F7/00 ,  G05B19/41865 ,  G05B2219/31352 ,  G05B2219/33303 ,  G06F17/30

摘要： In accordance with an embodiment, a method for exception handling comprises accessing an exception type for an exception, filtering historical data based on at least one defined criterion to provide a data train comprising data sets, assigning a weight to each data set, and providing a current control parameter. The data sets each comprise a historical condition and a historical control parameter, and the weight assigned to each data set is based on each historical condition. The current control parameter is provided using the weight and the historical control parameter for each data set.

摘要翻译： 根据实施例，用于异常处理的方法包括访问异常的异常类型，基于至少一个定义的标准过滤历史数据，以提供包括数据集的数据队列，为每个数据集分配权重，以及提供 电流控制参数。 数据集各自包含历史条件和历史控制参数，并且分配给每个数据集的权重基于每个历史条件。 使用每个数据集的权重和历史控制参数提供当前的控制参数。

公开(公告)号：US08394719B2

公开(公告)日：2013-03-12

申请号：US13106711

申请日：2011-05-12

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou ,  Yen-Wei Cheng

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou ,  Yen-Wei Cheng

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L22/20 ,  G05B19/41875 ,  H01L22/12 ,  Y02P90/22 ,  Y02P90/26

摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method including obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer. A process variable of the process is modeled as a function of the low resolution metrology data to generate a low-resolution process model and the process variable is modeled as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.

摘要翻译： 描述了实现多分辨率高级过程控制（APC）的系统和方法。 一个实施例是一种方法，包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据。 该过程的过程变量被模型化为低分辨率度量数据的函数，以生成低分辨率过程模型，并且将过程变量建模为高分辨率度量数据的函数以生成高分辨率过程模型。 该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合，以生成多分辨率过程模型，其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应，以控制过程模块的性能。

公开(公告)号：US20100255613A1

公开(公告)日：2010-10-07

申请号：US12416595

申请日：2009-04-01

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： G05B19/41875 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22 ,  Y02P90/26

摘要： System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method for fabricating ICs from a semiconductor wafer comprising performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further comprises removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.

摘要翻译： 描述了用于实现多分辨率高级过程控制（“APC”）的系统和方法。 一个实施例是一种用于从半导体晶片制造IC的方法，包括在半导体晶片上执行第一工艺; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。 该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

公开(公告)号：US07951615B2

公开(公告)日：2011-05-31

申请号：US12416595

申请日：2009-04-01

申请人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

发明人： Andy Tsen ,  Jin-Ning Sung ,  Po-Feng Tsai ,  Jong-I Mou

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： G05B19/41875 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22 ,  Y02P90/26

摘要： One embodiment is a method for fabricating ICs from a semiconductor wafer. The method includes performing a first process on the semiconductor wafer; taking a first measurement indicative of an accuracy with which the first process was performed; and using the first measurement to generate metrology calibration data, wherein the metrology calibration data includes an effective portion and a non-effective portion. The method further includes removing the non-effective portion from the metrology calibration data and modeling the effective portion with a metrology calibration model; combining the metrology calibration model with a first process model to generate a multi-resolution model, wherein the first process model models an input-output relationship of the first process; and analyzing a response of the multi-resolution model and second measurement data to control performance a second process.

摘要翻译： 一个实施例是用于从半导体晶片制造IC的方法。 该方法包括在半导体晶片上执行第一处理; 进行第一次测量，表明执行第一个处理的精度; 以及使用所述第一测量来产生计量学校准数据，其中所述计量学校准数据包括有效部分和非有效部分。 该方法还包括从计量校准数据中去除非有效部分并用计量校准模型对有效部分进行建模; 将所述计量校准模型与第一过程模型结合以生成多分辨率模型，其中所述第一过程模型对所述第一过程的输入 - 输出关系建模; 以及分析所述多分辨率模型和第二测量数据的响应以控制第二过程的性能。

公开(公告)号：US08406912B2

公开(公告)日：2013-03-26

申请号：US12823351

申请日：2010-06-25

申请人： Jui-Long Chen ,  Chia-Tong Ho ,  Po-Feng Tsai ,  Hui-Yun Chao ,  Jong-I Mou

发明人： Jui-Long Chen ,  Chia-Tong Ho ,  Po-Feng Tsai ,  Hui-Yun Chao ,  Jong-I Mou

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/32191 ,  G05B2219/35082 ,  Y02P90/22 ,  Y02P90/265

摘要： System and method for data mining and feature tracking for fab-wide prediction and control are described. One embodiment is a system comprising a database for storing raw wafer manufacturing data; a data mining module for processing the raw wafer manufacturing data to select the best data therefrom in accordance with at least one of a plurality of knowledge-, statistic-, and effect-based processes; and a feature tracking module associated with the data mining module and comprising a self-learning model wherein a sensitivity of the self-learning model is dynamically tuned to meet real-time production circumstances, the feature tracking module receiving the selected data from the data mining module and generating prediction and control data therefrom; wherein the prediction and control data are used to control future processes in the wafer fabrication facility.

摘要翻译： 描述了用于晶圆厂预测和控制的数据挖掘和特征跟踪的系统和方法。 一个实施例是包括用于存储原始晶片制造数据的数据库的系统; 数据挖掘模块，用于根据多个基于知识，统计和效果的过程中的至少一个来处理原始晶片制造数据以从其中选择最佳数据; 以及与所述数据挖掘模块相关联并且包括自学习模型的特征跟踪模块，其中自学习模型的灵敏度被动态调整以满足实时生产环境，所述特征跟踪模块从所述数据挖掘接收所选择的数据 模块并从其生成预测和控制数据; 其中预测和控制数据用于控制晶片制造设备中的未来工艺。

公开(公告)号：US20110320026A1

公开(公告)日：2011-12-29

申请号：US12823351

申请日：2010-06-25

申请人： Jui-Long Chen ,  Chia-Tong Ho ,  Po-Feng Tsai ,  Hui-Yun Chao ,  Jong-I Mou

发明人： Jui-Long Chen ,  Chia-Tong Ho ,  Po-Feng Tsai ,  Hui-Yun Chao ,  Jong-I Mou

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/32191 ,  G05B2219/35082 ,  Y02P90/22 ,  Y02P90/265

摘要： System and method for data mining and feature tracking for fab-wide prediction and control are described. One embodiment is a system comprising a database for storing raw wafer manufacturing data; a data mining module for processing the raw wafer manufacturing data to select the best data therefrom in accordance with at least one of a plurality of knowledge-, statistic-, and effect-based processes; and a feature tracking module associated with the data mining module and comprising a self-learning model wherein a sensitivity of the self-learning model is dynamically tuned to meet real-time production circumstances, the feature tracking module receiving the selected data from the data mining module and generating prediction and control data therefrom; wherein the prediction and control data are used to control future processes in the wafer fabrication facility.

摘要翻译： 描述了用于晶圆厂预测和控制的数据挖掘和特征跟踪的系统和方法。 一个实施例是包括用于存储原始晶片制造数据的数据库的系统; 数据挖掘模块，用于根据多个基于知识，统计和效果的过程中的至少一个来处理原始晶片制造数据以从其中选择最佳数据; 以及与数据挖掘模块相关联并包括自学习模型的特征跟踪模块，其中自学习模型的灵敏度被动态调整以满足实时生产环境，特征跟踪模块从数据挖掘接收所选数据 模块并从其生成预测和控制数据; 其中预测和控制数据用于控制晶片制造设备中的未来工艺。