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公开(公告)号：US11101405B2
公开(公告)日：2021-08-24
申请号：US16783737
申请日：2020-02-06
Applicant: Apple Inc.
Inventor： Kelly McGroddy , Hsin-Hua Hu , Andreas Bibl , Clayton Ka Tsun Chan , Daniel Arthur Haeger
IPC: H01L33/14 , H01L23/00 , H01L25/075 , H01L27/15 , H01L33/00 , H01L27/01 , H01L33/06 , H01L33/30 , H01L33/42 , G09G3/32 , H01L33/16 , H01L33/20
Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
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公开(公告)号：US20190371964A1
公开(公告)日：2019-12-05
申请号：US16545919
申请日：2019-08-20
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US20200251614A1
公开(公告)日：2020-08-06
申请号：US16783737
申请日：2020-02-06
Applicant: Apple Inc.
Inventor： Kelly McGroddy , Hsin-Hua Hu , Andreas Bibl , Clayton Ka Tsun Chan , Daniel Arthur Haeger
IPC: H01L33/14 , H01L33/42 , H01L33/30 , H01L33/00 , H01L33/06 , H01L27/01 , H01L23/00 , H01L27/15 , H01L25/075
Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
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Patent Agency Ranking
公开(公告)号：US10714655B2
公开(公告)日：2020-07-14
申请号：US16545919
申请日：2019-08-20
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US10193013B2
公开(公告)日：2019-01-29
申请号：US15828081
申请日：2017-11-30
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US20160336484A1
公开(公告)日：2016-11-17
申请号：US15223900
申请日：2016-07-29
Applicant: Apple Inc.
Inventor： Kelly McGroddy , Hsin-Hua Hu , Andreas Bibl , Clayton Ka Tsun Chan , Daniel Arthur Haeger
Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.
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公开(公告)号：US09484492B2
公开(公告)日：2016-11-01
申请号：US14853614
申请日：2015-09-14
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet
CPC classification number: H01L33/06 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩展层和底部电流扩散层之间的有源层。
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公开(公告)号：US20160315218A1
公开(公告)日：2016-10-27
申请号：US15199803
申请日：2016-06-30
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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