公开(公告)号：US20160181476A1

公开(公告)日：2016-06-23

申请号：US14803991

申请日：2015-07-20

Applicant: Apple Inc.

Inventor： Kevin K. C. Chang ,  Hsin-Hua Hu ,  Clayton Ka Tsun Chan ,  Chien-Hsing Huang

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/60 ,  H01L25/075 ,  H01L33/06 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: LEDs and an electronic device are disclosed. In an embodiment an LED includes a p-n diode and a dielectric mirror spanning along a lateral sidewall of the p-n diode and directly underneath the p-n diode. An opening is formed in the dielectric mirror directly underneath the p-n diode, and a bottom conductive contact is on the dielectric mirror directly underneath the p-n diode and within the opening in the dielectric mirror.

Abstract translation: LED和电子设备被公开。 在一个实施例中，LED包括p-n二极管和跨越p-n二极管的横向侧壁并直接位于p-n二极管下方的电介质镜。 在p-n二极管正下方的电介质镜中形成一个开口，而在p-n二极管正下方和电介质反射镜的开口内的电介质镜上都有一个底部导电接触。

公开(公告)号：US11978825B2

公开(公告)日：2024-05-07

申请号：US17388949

申请日：2021-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/01 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

CPC classification number: H01L33/145 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/0016 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US10593832B2

公开(公告)日：2020-03-17

申请号：US15223900

申请日：2016-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L27/01 ,  H01L33/06 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US09966260B1

公开(公告)日：2018-05-08

申请号：US15232738

申请日：2016-08-09

Applicant: Apple Inc.

Inventor： Clayton Ka Tsun Chan ,  Ion Bita ,  Ranjith Samuel E. John ,  Alfred F. Renaldo ,  Jie Fu ,  Sudirukkuge T. Jinasundera ,  An-Chun Tien

IPC: B32B38/10 ,  H01L21/033 ,  H01L29/861 ,  H01L29/66 ,  H01L21/683 ,  H01L21/268 ,  B29C71/04 ,  B29D11/00

CPC classification number: H01L21/0331 ,  B23K26/0006 ,  B23K26/122 ,  B23K26/18 ,  B23K26/50 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/54 ,  B29C71/04 ,  B29D11/0073 ,  B29D11/0074 ,  H01L21/268 ,  H01L21/6835 ,  H01L21/7813 ,  H01L29/66136 ,  H01L29/861 ,  H01L33/00 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: Laser lift-off methods are described in which optical flatness is provided on the back side of a temporary substrate using either an optical layer or optical liquid. A laser is directed through the optical layer or optical liquid and a back side of the temporary substrate to decompose a portion of a process layer supported on a front side of the temporary substrate, followed by separation of the process layer and the temporary substrate.

公开(公告)号：US20200251614A1

公开(公告)日：2020-08-06

申请号：US16783737

申请日：2020-02-06

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/30 ,  H01L33/00 ,  H01L33/06 ,  H01L27/01 ,  H01L23/00 ,  H01L27/15 ,  H01L25/075

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US20160336484A1

公开(公告)日：2016-11-17

申请号：US15223900

申请日：2016-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/42 ,  H01L33/30 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US20220013688A1

公开(公告)日：2022-01-13

申请号：US17388949

申请日：2021-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L27/01 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US11101405B2

公开(公告)日：2021-08-24

申请号：US16783737

申请日：2020-02-06

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L27/01 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.