公开(公告)号：US20180240755A1

公开(公告)日：2018-08-23

申请号：US15960440

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/532 ,  C23C16/455 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US20160181150A1

公开(公告)日：2016-06-23

申请号：US14919149

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

Abstract translation: 描述了制造具有包含氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包含Mn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。

公开(公告)号：US20160032455A1

公开(公告)日：2016-02-04

申请号：US14815625

申请日：2015-07-31

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Thompson ,  Mei Chang ,  Paul F. Ma ,  David Knapp ,  Jeffrey W. Anthis ,  Annamalai Lakshmanan

IPC: C23C16/455 ,  C25D3/38 ,  C25D5/34 ,  C23C16/18 ,  C23C16/02

CPC classification number: C23C16/45553 ,  C23C16/045 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76873

Abstract: Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

Abstract translation: 利用有机金属化合物沉积金属层的方法。 衬底表面暴露于气态有机金属金属前体和有机金属金属反应物以在衬底上形成金属层（例如铜层）。

公开(公告)号：US11587829B2

公开(公告)日：2023-02-21

申请号：US17143594

申请日：2021-01-07

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US10910263B2

公开(公告)日：2021-02-02

申请号：US16545340

申请日：2019-08-20

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US10892186B2

公开(公告)日：2021-01-12

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44 ,  C23C14/34 ,  C23C16/04 ,  C23C14/04 ,  C23C14/02 ,  C23C16/18 ,  C23C14/14

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US20180204721A1

公开(公告)日：2018-07-19

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US09953926B2

公开(公告)日：2018-04-24

申请号：US14592170

申请日：2015-01-08

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US20150194384A1

公开(公告)日：2015-07-09

申请号：US14592170

申请日：2015-01-08

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

Abstract translation: 描述了制造具有包含钴和氮化锰的阻挡层的半导体器件的半导体器件和方法。 还描述了与包括CoMn（N）和任选的粘合层的阻挡层相同的半导体器件和方法。