公开(公告)号：US20180237915A1

公开(公告)日：2018-08-23

申请号：US15489306

申请日：2017-04-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. DU BOIS ,  Kien N. CHUC ,  Karthik JANAKIRAMAN

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/44 ,  H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/45589 ,  H01L21/02274

Abstract: Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.

公开(公告)号：US20160084400A1

公开(公告)日：2016-03-24

申请号：US14932384

申请日：2015-11-04

Applicant: Applied Materials, Inc.

Inventor： Ramprakash SANKARAKRISHNAN ,  Dale R. DU BOIS ,  Ganesh BALASUBRAMANIAN ,  Karthik JANAKIRAMAN ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC: F16K31/06 ,  F16K1/22

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US20230023764A1

公开(公告)日：2023-01-26

申请号：US17786520

申请日：2020-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： David W. GROECHEL ,  Michael R. RICE ,  Gang Grant PENG ,  Rui CHENG ,  Zubin HUANG ,  Han WANG ,  Karthik JANAKIRAMAN ,  Diwakar KEDLAYA ,  Paul L. BRILLHART ,  Abdul Aziz KHAJA

IPC: H01L21/285 ,  H01L21/67

Abstract: Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.

公开(公告)号：US20230022359A1

公开(公告)日：2023-01-26

申请号：US17383101

申请日：2021-07-22

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: H01L21/26 ,  H01L21/02 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relate to methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range. In one implementation, a method of processing substrates includes introducing one or more processing gases to a processing volume of a processing chamber, and depositing a film on a substrate supported on a substrate support disposed in the processing volume. The method includes supplying simultaneously a first radiofrequency (RF) power and a second RF power to one or more bias electrodes of the substrate support. The first RF power includes a first RF frequency and the second RF power includes a second RF frequency that is less than the first RF frequency. A modulus of the film is maintained within a predetermined modulus range.

公开(公告)号：US20210407791A1

公开(公告)日：2021-12-30

申请号：US17035192

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/27

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing nitrogen-doped diamond-like carbon films for patterning applications. In one or more embodiments, a method for processing a substrate includes flowing a deposition gas containing a hydrocarbon compound and a nitrogen dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, and generating a plasma at or above the substrate by applying a first RF bias to the electrostatic chuck to deposit a nitrogen-doped diamond-like carbon film on the substrate. The nitrogen-doped diamond-like carbon film has a density of greater than 1.5 g/cc and a compressive stress of about −20 MPa to less than −600 MPa.

公开(公告)号：US20210147981A1

公开(公告)日：2021-05-20

申请号：US16636659

申请日：2018-08-10

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: In one aspect, an apparatus includes a chamber body, a blocker plate for delivering process gases into a gas mixing volume, and a face plate having holes through which the mixed gas is distributed to a substrate. In another aspect, the face plate may include a first region with a recess relative to a second region. In another aspect, the blocker plate may include a plurality of regions, each region having different hole patterns/geometries and/or flow profiles. In another aspect, the apparatus may include a radiation shield disposed below a bottom of the substrate support. A shaft or stem of the substrate support includes holes at an upper end thereof near the substrate support.

公开(公告)号：US20200335339A1

公开(公告)日：2020-10-22

申请号：US16867095

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20200258720A1

公开(公告)日：2020-08-13

申请号：US16785331

申请日：2020-02-07

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Diwakar N. KEDLAYA ,  Karthik JANAKIRAMAN ,  Yi YANG ,  Rui CHENG

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/515

Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.

公开(公告)号：US20200234932A1

公开(公告)日：2020-07-23

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra PARIMI ,  Zubin HUANG ,  Jian LI ,  Satish RADHAKRISHNAN ,  Rui CHENG ,  Diwakar N. KEDLAYA ,  Juan Carlos ROCHA-ALVAREZ ,  Umesh M. KELKAR ,  Karthik JANAKIRAMAN ,  Sarah Michelle BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Byung Seok KWON

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US20190393042A1

公开(公告)日：2019-12-26

申请号：US16554834

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Susmit SINGHA ROY ,  Kelvin CHAN ,  Hien Minh LE ,  Sanjay KAMATH ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Karthik JANAKIRAMAN

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/06 ,  H01L21/768

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.