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23 条记录 (耗时 0.036 秒)

    Process and apparatus for producing optical recording medium
    11.
    发明授权
    Process and apparatus for producing optical recording medium 有权
    用于生产光记录介质的方法和设备

    公开(公告)号：US09196288B2

    公开(公告)日：2015-11-24

    申请号：US12443014

    申请日：2007-09-21

    申请人： Shigeyuki Furomoto ,  Masafumi Aga ,  Toshifumi Kawano ,  Hideharu Takeshima ,  Yukari Kiritou ,  Atsushi Komura ,  Kumi Mizuno ,  Yumi Matsumura

    发明人： Shigeyuki Furomoto ,  Masafumi Aga ,  Toshifumi Kawano ,  Hideharu Takeshima ,  Yukari Kiritou ,  Atsushi Komura ,  Kumi Mizuno ,  Yumi Matsumura

    IPC分类号： B29C59/02 ,  G11B7/26 ,  G11B7/2463 ,  G11B7/2467 ,  G11B7/259

    CPC分类号： G11B7/263 ,  G11B7/2463 ,  G11B7/2467 ,  G11B7/259

    摘要： To produce an optical recording medium having a good concavo-convex shape whereby optical information recording/retrieving is stabilized.A process for producing an optical recording medium 100 provided with an interlayer 104 having a concavo-convex shape, which comprises a step of forming a recording layer 102 on a substrate 101 directly or via another layer; a step of placing a resin material layer 104a and a stamper 110 having a concavo-convex shape for transfer, in this order on the recording layer 102, and curing the resin material layer 104a in this laminated state to obtain a bonded body 112 comprising the substrate 101, the recording layer 102, the resin material layer 104a and the stamper 110, and a step of separating the stamper 110 from the resin material layer 104a so that the concavo-convex shape for transfer is transferred to the resin material layer 104a, and applying surface modification treatment to promote the curing of the resin material layer 104a, to form the interlayer 104.

    摘要翻译： 为了制造具有良好的凹凸形状的光学记录介质，由此光学信息记录/恢复被稳定。 一种具有凹凸形状的中间层104的光记录介质100的制造方法，其特征在于，包括：直接或经由另一层在基板101上形成记录层102的工序; 将树脂材料层104a和具有凹凸形状的压模110依次放置在记录层102上，并在该层压状态下固化树脂材料层104a以获得粘合体112的步骤， 基板101，记录层102，树脂材料层104a和压模110，以及将压模110与树脂材料层104a分离，使得用于转印的凹凸形状被转印到树脂材料层104a的步骤， 并施加表面改性处理以促进树脂材料层104a的固化，形成中间层104。

    PROCESS AND APPARATUS FOR PRODUCING OPTICAL RECORDING MEDIUM
    14.
    发明申请
    PROCESS AND APPARATUS FOR PRODUCING OPTICAL RECORDING MEDIUM 有权
    用于生产光学记录介质的过程和装置

    公开(公告)号：US20100090358A1

    公开(公告)日：2010-04-15

    申请号：US12443014

    申请日：2007-09-21

    申请人： Shigeyuki Furomoto ,  Masafumi Aga ,  Toshifumi Kawano ,  Hideharu Takeshima ,  Yukari Kiritou ,  Atsushi Komura ,  Kumi Mizuno ,  Yumi Matsumura

    发明人： Shigeyuki Furomoto ,  Masafumi Aga ,  Toshifumi Kawano ,  Hideharu Takeshima ,  Yukari Kiritou ,  Atsushi Komura ,  Kumi Mizuno ,  Yumi Matsumura

    IPC分类号： B29D17/00

    CPC分类号： G11B7/263 ,  G11B7/2463 ,  G11B7/2467 ,  G11B7/259

    摘要： To produce an optical recording medium having a good concavo-convex shape whereby optical information recording/retrieving is stabilized.A process for producing an optical recording medium 100 provided with an interlayer 104 having a concavo-convex shape, which comprises a step of forming a recording layer 102 on a substrate 101 directly or via another layer; a step of placing a resin material layer 104a and a stamper 110 having a concavo-convex shape for transfer, in this order on the recording layer 102, and curing the resin material layer 104a in this laminated state to obtain a bonded body 112 comprising the substrate 101, the recording layer 102, the resin material layer 104a and the stamper 110, and a step of separating the stamper 110 from the resin material layer 104a so that the concavo-convex shape for transfer is transferred to the resin material layer 104a, and applying surface modification treatment to promote the curing of the resin material layer 104a, to form the interlayer 104.

    摘要翻译： 为了制造具有良好的凹凸形状的光学记录介质，由此光学信息记录/恢复被稳定。 一种具有凹凸形状的中间层104的光记录介质100的制造方法，其特征在于，包括：直接或经由另一层在基板101上形成记录层102的工序; 将树脂材料层104a和具有凹凸形状的压模110依次放置在记录层102上，并在该层压状态下固化树脂材料层104a以获得粘合体112的步骤， 基板101，记录层102，树脂材料层104a和压模110，以及将压模110与树脂材料层104a分离，使得用于转印的凹凸形状被转印到树脂材料层104a的步骤， 并施加表面改性处理以促进树脂材料层104a的固化，形成中间层104。

    Dicing sheet frame
    16.
    发明申请
    Dicing sheet frame 审中-公开
    切片片框

    公开(公告)号：US20070111484A1

    公开(公告)日：2007-05-17

    申请号：US11600097

    申请日：2006-11-16

    申请人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura

    发明人： Atsushi Komura ,  Muneo Tamura ,  Kazuhiko Sugiura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

    摘要： A dicing sheet frame, which is used when a semiconductor wafer adhered to a dicing sheet is cut into chips, includes a plurality of frame parts and a connecting device. The plurality of frame parts supports the dicing sheet. The connecting device connects the plurality of frame parts such that the plurality of frame parts has an annular shape.

    摘要翻译： 当将粘附到切割片上的半导体晶片切割成芯片时使用的切割片框架包括多个框架部件和连接装置。 多个框架部件支撑切割片。 连接装置连接多个框架部件，使得多个框架部件具有环形形状。

    Method for measuring thickness of oxide film
    17.
    发明授权
    Method for measuring thickness of oxide film 失效
    测量氧化膜厚度的方法

    公开(公告)号：US06885466B1

    公开(公告)日：2005-04-26

    申请号：US09616372

    申请日：2000-07-13

    申请人： Atsushi Komura ,  Hisato Kato ,  Hiroshi Otsuki

    发明人： Atsushi Komura ,  Hisato Kato ,  Hiroshi Otsuki

    IPC分类号： G01B11/06 ,  G01B11/28 ,  G01J4/00

    CPC分类号： G01B11/0616

    摘要： In a process of manufacturing a semiconductor device, after a gate oxide film is formed, the thickness of the gate oxide film is measured by measuring an exposure period defined from a time at which the oxide film is formed to a time at which the thickness of the oxide film is measured. In addition, if necessary, the measurement of the oxide film is corrected to determine the real thickness based on the exposure period. Accordingly, the thickness of the gate oxide film can be measured accurately.

    摘要翻译： 在制造半导体器件的过程中，在形成栅极氧化膜之后，通过测量从形成氧化物膜的时间定义的曝光时间到测量氧化膜厚度的时间来测量栅极氧化膜的厚度 测量氧化膜。 此外，如果需要，校正氧化膜的测量以基于曝光周期确定实际厚度。 因此，可以精确地测量栅极氧化膜的厚度。

    Dry etching process for semiconductor
    18.
    发明授权
    Dry etching process for semiconductor 失效
    半导体干蚀刻工艺

    公开(公告)号：US5423941A

    公开(公告)日：1995-06-13

    申请号：US152896

    申请日：1993-11-17

    申请人： Atsushi Komura ,  Yoshikazu Sakano ,  Kenji Kondo ,  Keiichi Kon ,  Tetsuhiko Sanbei ,  Shoji Miura

    发明人： Atsushi Komura ,  Yoshikazu Sakano ,  Kenji Kondo ,  Keiichi Kon ,  Tetsuhiko Sanbei ,  Shoji Miura

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  C23F1/00

    CPC分类号： H01L21/3065

    摘要： A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.

    摘要翻译： 一种通过在半导体的表面上形成掩模来形成半导体衬底的表面上的深沟槽的方法，其规定了沟槽的位置; 然后使用气体混合物干燥蚀刻半导体表面，所述气体混合物包括（1）蚀刻剂，含溴的气体，蚀刻半导体表面以形成沟槽，（2）清洁，含卤素的气体，其蒸发由蚀刻形成的残余物; 和（3）能够与在蚀刻期间形成的材料反应的反应气体，并且能够通过蚀刻剂气体减少掩模的浪费。

    Cermet insert and cutting tool
    19.
    发明授权
    Cermet insert and cutting tool 有权
    金属陶瓷刀片和刀具

    公开(公告)号：US07762747B2

    公开(公告)日：2010-07-27

    申请号：US11916329

    申请日：2006-06-13

    申请人： Toshiyuki Taniuchi ,  Masafumi Fukumura ,  Kei Takahashi ,  Tomoaki Shindo ,  Atsushi Komura ,  Hiroaki Takashima

    发明人： Toshiyuki Taniuchi ,  Masafumi Fukumura ,  Kei Takahashi ,  Tomoaki Shindo ,  Atsushi Komura ,  Hiroaki Takashima

    IPC分类号： B23B27/14 ,  C04B35/58

    CPC分类号： C22C29/04 ,  B22F2005/001 ,  B22F2998/10 ,  B22F2999/00 ,  C22C27/04 ,  Y10T407/1924 ,  Y10T407/22 ,  Y10T407/27 ,  B22F3/02 ,  B22F3/10 ,  B22F2201/20 ,  B22F2201/11 ,  B22F2201/02

    摘要： One aspect of this titanium carbonitride-based cermet insert has a microstructure including 75 to 90 area % of a hard phase and the balance as a binding phase, wherein the hard phase includes a first hard phase in which a core-having structure includes a TiCN phase and a peripheral portion includes a (Ti,W,Ta/Nb)CN phase, a second hard phase including a (Ti,W,Ta/Nb)CN phase, and a third hard phase including a TiCN phase, and the binding phase contains 18 to 33% of Co, 20 to 35% of Ni, 5% or less of Ti and Ta and/or Nb, and 40 to 60 mass % of W. In another aspect of this cermet insert, a total of an amount of Ti converted as carbonitride, an amount of Ta and/or Nb converted as carbide, and an amount of W converted as carbide is 70 to 95 mass %, an amount of W converted as carbide is 20 to 35 mass %, and Co and Ni are 5 to 30 mass %, this cermet insert has a microstructure including a hard phase containing (Ti,W,Ta/Nb)CN and a binding phase containing, as main components thereof, W and Co and/or Ni, and 40 to 65 mass % of the W is contained in the hard phase. This cutting tool includes a holder and the cermet insert described above held and fixed by the holder.

    摘要翻译： 这种基于碳氮化钛的金属陶瓷插入物的一个方面具有包括硬度相的75〜90面积％，作为结合相的余量的微观结构，其中硬质相包括第一硬质相，其中，核心结构包括TiCN 相和周边部分包括（Ti，W，Ta / Nb）CN相，包括（Ti，W，Ta / Nb）CN相的第二硬质相和包含TiCN相的第三硬质相， 相中含有18〜33％的Co，20〜35％的Ni，5％以下的Ti和Ta和/或Nb，以及40〜60质量％的W。在该金属陶瓷插入体的另一方面， Ti转化为碳氮化物的量，作为碳化物转化的Ta和/或Nb的量，碳化物换算的W的量为70〜95质量％，碳化物换算的W的量为20〜35质量％，Co 和Ni为5〜30质量％，该金属陶瓷嵌入体具有包含（Ti，W，Ta / Nb）CN的硬质相和包含W和C的主要成分的结合相的组织 o和/或Ni，并且硬度相中包含W的40〜65质量％。 该切削工具包括保持器和由保持器固定和固定的上述金属陶瓷刀片。

    CERMET INSERT AND CUTTING TOOL
    20.
    发明申请
    CERMET INSERT AND CUTTING TOOL 有权
    CERMET插入和切割工具

    公开(公告)号：US20100014930A1

    公开(公告)日：2010-01-21

    申请号：US11916329

    申请日：2006-06-13

    申请人： Toshiyuki Taniuchi ,  Masafumi Fukumura ,  Kei Takahashi ,  Tomoaki Shindo ,  Atsushi Komura ,  Hiroaki Takashima

    发明人： Toshiyuki Taniuchi ,  Masafumi Fukumura ,  Kei Takahashi ,  Tomoaki Shindo ,  Atsushi Komura ,  Hiroaki Takashima

    IPC分类号： B23B27/14 ,  C04B35/58 ,  B23B27/16

    CPC分类号： C22C29/04 ,  B22F2005/001 ,  B22F2998/10 ,  B22F2999/00 ,  C22C27/04 ,  Y10T407/1924 ,  Y10T407/22 ,  Y10T407/27 ,  B22F3/02 ,  B22F3/10 ,  B22F2201/20 ,  B22F2201/11 ,  B22F2201/02

    摘要： One aspect of this titanium carbonitride-based cermet insert has a microstructure including 75 to 90 area % of a hard phase and the balance as a binding phase, wherein the hard phase includes a first hard phase in which a core-having structure includes a TiCN phase and a peripheral portion includes a (Ti,W,Ta/Nb)CN phase, a second hard phase including a (Ti,W,Ta/Nb)CN phase, and a third hard phase including a TiCN phase, and the binding phase contains 18 to 33% of Co, 20 to 35% of Ni, 5% or less of Ti and Ta and/or Nb, and 40 to 60 mass % of W. In another aspect of this cermet insert, a total of an amount of Ti converted as carbonitride, an amount of Ta and/or Nb converted as carbide, and an amount of W converted as carbide is 70 to 95 mass %, an amount of W converted as carbide is 20 to 35 mass %, and Co and Ni are 5 to 30 mass %, this cermet insert has a microstructure including a hard phase containing (Ti,W,Ta/Nb)CN and a binding phase containing, as main components thereof, W and Co and/or Ni, and 40 to 65 mass % of the W is contained in the hard phase. This cutting tool includes a holder and the cermet insert described above held and fixed by the holder.

    摘要翻译： 这种基于碳氮化钛的金属陶瓷插入物的一个方面具有包括硬度相的75〜90面积％，作为结合相的余量的微观结构，其中硬质相包括第一硬质相，其中，核心结构包括TiCN 相和周边部分包括（Ti，W，Ta / Nb）CN相，包括（Ti，W，Ta / Nb）CN相的第二硬质相和包含TiCN相的第三硬质相， 相中含有18〜33％的Co，20〜35％的Ni，5％以下的Ti和Ta和/或Nb，以及40〜60质量％的W。在该金属陶瓷插入体的另一方面， Ti转化为碳氮化物的量，作为碳化物转化的Ta和/或Nb的量，碳化物换算的W的量为70〜95质量％，碳化物换算的W的量为20〜35质量％，Co 和Ni为5〜30质量％，该金属陶瓷嵌入体具有包含（Ti，W，Ta / Nb）CN的硬质相和包含W和C的主要成分的结合相的组织 o和/或Ni，并且硬度相中包含W的40〜65质量％。 该切削工具包括保持器和由保持器固定和固定的上述金属陶瓷刀片。