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    Array Substrate, Manufacturing Method Thereof, and Display Device
    11.
    发明申请
    Array Substrate, Manufacturing Method Thereof, and Display Device 有权
    阵列基板，其制造方法和显示装置

    公开(公告)号：US20160254298A1

    公开(公告)日：2016-09-01

    申请号：US14646925

    申请日：2014-10-01

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Chunping Long ,  Yinan Liang ,  Lujiang Huangfu

    IPC: H01L27/12 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786

    CPC classification number: H01L27/1288 ,  H01L21/28008 ,  H01L21/28158 ,  H01L21/28506 ,  H01L27/12 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1274 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696 ,  H01L2251/5315

    Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. Patterns comprising a gate, a gate insulating layer and a polysilicon active layer are formed on a base substrate by single patterning process. A passivation layer is formed on the substrate surface formed with the patterns, and patterns of a first via and a second via are formed on a surface of the passivation layer by single patterning process. Patterns of a source, a drain and a pixel electrode are formed on the substrate surface formed with the patterns by single patterning process. The source is electrically connected with the polysilicon active layer through the first via, and the drain is electrically connected with the polysilicon active layer through the second via. A pattern of pixel defining layer is formed on the substrate surface formed with the patterns by single patterning process.

    Abstract translation: 公开了阵列基板，其制造方法和显示装置。 通过单一图案化工艺在基底基板上形成包括栅极，栅极绝缘层和多晶硅有源层的图案。 在形成有图案的基板表面上形成钝化层，并且通过单一图案化工艺在钝化层的表面上形成第一通孔和第二通孔的图案。 通过单一图案化工艺，在形成有图案的衬底表面上形成源极，漏极和像素电极的图案。 源极通过第一通孔与多晶硅有源层电连接，漏极通过第二通孔与多晶硅有源层电连接。 通过单一图案化工艺在形成有图案的衬底表面上形成像素限定层的图案。

    THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND MANUFACTURING METHOD THEREOF
    12.
    发明申请
    THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管，阵列基板及其制造方法

    公开(公告)号：US20140110718A1

    公开(公告)日：2014-04-24

    申请号：US13994244

    申请日：2012-11-13

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Yinan Liang

    IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

    Abstract: A thin film transistor, an array substrate, and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer and an active layer sequentially on a substrate, and forming an active region through a patterning process; forming a gate insulating layer and a gate electrode sequentially; forming Ni deposition openings; forming a dielectric layer having source/drain contact holes in a one-to-one correspondence with the Ni deposition openings; and forming source/drain electrodes which are connected with the active region via the source/drain contact holes and the Ni deposition openings.

    Abstract translation: 薄膜晶体管，阵列基板及其制造方法。 制造方法包括：在衬底上依次形成缓冲层和有源层，并通过图案化工艺形成有源区; 依次形成栅极绝缘层和栅电极; 形成Ni沉积开口; 形成具有源极/漏极接触孔的电介质层，其与Ni沉积开口一一对应; 以及通过源/漏接触孔和Ni沉积开口形成与有源区连接的源/漏电极。

    Pixel arrangement structure, display panel and display device
    16.
    发明授权
    Pixel arrangement structure, display panel and display device 有权

    公开(公告)号：US10274654B2

    公开(公告)日：2019-04-30

    申请号：US15536347

    申请日：2016-05-05

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Xiaodan Jin ,  Lujiang Huangfu ,  Yinan Liang

    IPC: G09F9/302 ,  G02B5/20 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/33 ,  H01L27/32

    Abstract: A pixel arrangement structure, a display panel and a display device are provided. The pixel arrangement structure includes a plurality of repeating units, each repeating unit includes one first sub-pixel, one second sub pixel and two third sub-pixels; the four sub-pixels of each repeating unit constitute two pixels, with the first sub-pixel and the second sub-pixel being shared by the two pixels; in a first direction of the pixel array, the sub-pixel density is equal to 1.5 times of the pixel density, in a second direction of the pixel array, the sub-pixel density is equal to 1.5 times of the pixel density; wherein, the first direction and the second direction are different directions.

    Evaporation method
    17.
    发明授权
    Evaporation method 有权

    公开(公告)号：US10190207B2

    公开(公告)日：2019-01-29

    申请号：US15322790

    申请日：2016-03-28

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Yinan Liang ,  Lujiang Huangfu

    IPC: C23C14/24 ,  C23C14/04 ,  C23C14/54 ,  H01L51/00

    Abstract: An evaporation method includes: evaporating evaporation material and forming evaporation material particles towards one or more transfer substrates by means of an evaporation source, so as to form an intermediate material layer on a surface of the transfer substrate; heating the one or more transfer substrates to evaporate the intermediate material layer located on the transfer substrate towards a target substrate, a temperature of the heated transfer substrate being less than a temperature of the evaporation source. There is further disclosed an evaporation device.

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