公开(公告)号：US20140008697A1

公开(公告)日：2014-01-09

申请号：US13991835

申请日：2011-12-06

Applicant: Brian R. Harkness ,  Ann W. Norris ,  Shellene K. Thurston ,  Vishal Chhabra ,  Bharati S. Kulkarni ,  Nikhil R. Taskar

Inventor： Brian R. Harkness ,  Ann W. Norris ,  Shellene K. Thurston ,  Vishal Chhabra ,  Bharati S. Kulkarni ,  Nikhil R. Taskar

IPC: H01L33/56

CPC classification number: H01L33/56 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08L83/04 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composition includes an organopolysiloxane component (A) comprising at least one of a disiloxane, a trisiloxane, and a tetrasiloxane, and has an average of at least two alkenyl groups per molecule. The composition further includes an organohydrogensiloxane component (B) having an average of at least two silicon-bonded hydrogen atoms per molecule. Components (A) and (B) each independently have at least one of an alkyl group and an aryl group and each independently have a number average molecular weight less than or equal to 1500 (g/mole). The composition yet further includes a catalytic amount of a hydrosilylation catalyst component (C), and titanium dioxide (TiO2) nanoparticles (D). The composition has a molar ratio of alkyl groups to aryl groups ranging from 1:0.25 to 1:3.0. A product of the present invention is the reaction product of the composition, which may be used to make a light emitting diode.

Abstract translation: 组合物包括包含二硅氧烷，三硅氧烷和四硅氧烷中的至少一种的有机聚硅氧烷组分（A），并且每分子平均具有至少两个烯基。 组合物还包括每分子平均具有至少两个硅键合的氢原子的有机氢硅氧烷组分（B）。 组分（A）和（B）各自独立地具有烷基和芳基中的至少一个，并且各自独立地具有小于或等于1500（g / mol）的数均分子量。 该组合物还包括催化量的氢化硅烷化催化剂组分（C）和二氧化钛（TiO 2）纳米颗粒（D）。 该组合物的烷基与芳基的摩尔比范围为1:0.25至1:3.0。 本发明的产品是可用于制造发光二极管的组合物的反应产物。

公开(公告)号：US06734465B1

公开(公告)日：2004-05-11

申请号：US10299410

申请日：2002-11-19

Applicant: Nikhil R. Taskar ,  Rameshwar Nath Bhargava

Inventor： Nikhil R. Taskar ,  Rameshwar Nath Bhargava

IPC: H01L2715

CPC classification number: H01L33/502 ,  H01L33/44 ,  H01L33/54

Abstract: A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The transparent matrix may include nanoparticles for matching the index of refraction of the material of the matrix to that of the light generating phosphors. The matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes. The phosphors dispersed in the matrix are preferably nanocrystalline.

Abstract translation: 在LED的激发下由磷光体产生“白”光的光子结构。 光子结构安装LED和其中分散有荧光体的光学透明矩阵，其将在LED的辐射的激发下发光。 透明矩阵可以包括纳米粒子，用于将矩阵材料的折射率与发光荧光体的折射率进行匹配。 基质材料可以容易地通过模塑形成并形成为包括用于聚焦发射光的透镜的各种形状。 大量的光子结构可以被布置在基板上以提供均匀的照明或其它目的。 分散在基质中的磷光体优选是纳米晶体。

公开(公告)号：US06534772B1

公开(公告)日：2003-03-18

申请号：US09688662

申请日：2000-10-16

Applicant: Vishal Chhabra ,  Rameshwar Nath Bhargava ,  Dennis Gallagher ,  Samuel P. Herko ,  Bharati S. Kulkarni ,  Nikhil R. Taskar ,  Aleksey Yekimov

Inventor： Vishal Chhabra ,  Rameshwar Nath Bhargava ,  Dennis Gallagher ,  Samuel P. Herko ,  Bharati S. Kulkarni ,  Nikhil R. Taskar ,  Aleksey Yekimov

IPC: G01T120

CPC classification number: G21K4/00 ,  G01T1/20 ,  G01T1/2921 ,  G21K2004/06 ,  G21K2004/12 ,  H01J2231/50036 ,  H01J2231/5016 ,  Y10S977/89

Abstract: A microchannel phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 40 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The dimensions of the microchannel and the phosphors and the relationship between the microchannels and the phosphors is optimized so that the light output compares favorably with lower resolution non microchannel based scintillation screens. A photomultiplier can be integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications.

Abstract translation: 用于将诸如X射线的辐射转换成可见光的微通道荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了许多直径为40微米或更小的直径的紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 微通道和磷光体的尺寸以及微通道和荧光体之间的关系被优化，使得光输出与较低分辨率的非微通道闪烁屏相比较。 光电倍增管可与X射线检测器集成，以提供增强的输出，用于电影或荧光透视应用的低电平X射线。

公开(公告)号：US06452184B1

公开(公告)日：2002-09-17

申请号：US09385995

申请日：1999-08-30

Applicant: Nikhil R. Taskar ,  John Victor D. Veliadis ,  Vishal Chhabra ,  Bharail Kulkarni ,  Neeta Pandit ,  Rameshwar Nath Bhargava ,  Roger Delano

Inventor： Nikhil R. Taskar ,  John Victor D. Veliadis ,  Vishal Chhabra ,  Bharail Kulkarni ,  Neeta Pandit ,  Rameshwar Nath Bhargava ,  Roger Delano

IPC: G01T120

CPC classification number: G01T1/20 ,  G21K2004/06 ,  G21K2004/12

Abstract: A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. A photomultiplier, which may be microchannel based, is integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications. The walls of the microchannels and/or the substrate surfaces include dielectric stack based light reflective coatings.

Abstract translation: 用于将诸如X射线的辐射转换成可见光的复合荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 可以将基于微通道的光电倍增管与X射线检测器集成，以提供用于电影或荧光透视应用的低水平X射线的增强输出。 微通道和/或衬底表面的壁包括基于电介质叠层的光反射涂层。

公开(公告)号：US5786233A

公开(公告)日：1998-07-28

申请号：US603959

申请日：1996-02-20

Applicant: Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

Inventor： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

IPC: H01L21/205 ,  H01L21/365 ,  H01L21/00

CPC classification number: H01L21/02579 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02551

Abstract: Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.

Abstract translation: 通过光辅助退火，通过化学气相沉积提供的p掺杂的II-VI和III-V半导体化合物层的活性受主浓度增加。

公开(公告)号：US07119372B2

公开(公告)日：2006-10-10

申请号：US10693126

申请日：2003-10-24

Applicant: Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

Inventor： Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

IPC: H01L27/15

CPC classification number: H01L33/405 ,  H01L33/387 ,  H01L2933/0083

Abstract: A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

Abstract translation: 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

公开(公告)号：US06885004B2

公开(公告)日：2005-04-26

申请号：US10073702

申请日：2002-02-11

Applicant: Nikhil R. Taskar ,  Rameshwar Nath Shargava

Inventor： Nikhil R. Taskar ,  Rameshwar Nath Shargava

IPC: G01T1/20 ,  G01T1/29 ,  G21K4/00

CPC classification number: G01T1/2921 ,  G01T1/20 ,  G21K4/00 ,  G21K2004/06 ,  G21K2004/12 ,  H01J2231/50036 ,  H01J2231/5016

Abstract: X-ray imaging screens utilizing phosphors disposed in microchannels disposed in a plate. This application relates to the “tiling” of such microchannel plates to form a larger imaging area and to the use of “storage phosphors” in the microchannel plates which enables the phosphors to be read out after exposure and from the side exposed to the X-rays. The storage phosphor screens of the present invention provide significantly increased resolution than the prior art storage phosphor screens.

Abstract translation: 使用设置在板中的微通道中的荧光体的X射线成像屏幕。 本申请涉及这种微通道板的“平铺”，以形成更大的成像区域，并且在微通道板中使用“储存磷光体”，这使得在曝光之后和从暴露于X射线的一侧可以读出荧光体。 射线 本发明的存储荧光屏提供比现有技术的存储荧光屏显着增加的分辨率。

公开(公告)号：US06300640B1

公开(公告)日：2001-10-09

申请号：US09197248

申请日：1998-11-20

Applicant: Rameshwar Nath Bhargava ,  Nikhil R. Taskar ,  Vishal Chhabra ,  John Victor D. Veliadis

Inventor： Rameshwar Nath Bhargava ,  Nikhil R. Taskar ,  Vishal Chhabra ,  John Victor D. Veliadis

IPC: G01T120

CPC classification number: G01T1/20 ,  G21K2004/06 ,  G21K2004/12

Abstract: A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.

Abstract translation: 用于将诸如X射线的辐射转换成可见光的复合荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 微通道和/或衬底表面的壁包括光反射涂层，以将由磷光体发射的光反射到诸如膜或电子检测器的光收集装置。 根据具体应用，涂层可以是辐射透明的或过滤/衰减的。

公开(公告)号：US6113691A

公开(公告)日：2000-09-05

申请号：US451341

申请日：1995-05-26

Applicant: Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

Inventor： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

IPC: C30B29/48 ,  C30B25/02 ,  C30B25/16 ,  H01L21/365 ,  H01L33/00 ,  H01S5/327

CPC classification number: H01L33/0087 ,  C30B25/02 ,  C30B29/48 ,  H01S2304/04 ,  H01S5/327

Abstract: Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.

Abstract translation: 提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。 外延层和半导体化合物可用于蓝色激光器件。