Abstract:
An X-ray imaging system utilizing a pixelated X-ray source and a X-ray imaging detector operated synchronously. The imaging system may be used in industrial and medical applications. The X-ray source and X-ray detector are synchronized such that a corresponding area of the X-ray detector is activated when the corresponding area of the X-ray source is emitting X-rays. Synchronized and adaptive emission and detection of the X-rays results in scatter rejection, improved image quality, and optimum exposure and dose reduction.
Abstract:
A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.
Abstract:
A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The transparent matrix may include nanoparticles for matching the index of refraction of the material of the matrix to that of the light generating phosphors. The matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes. The phosphors dispersed in the matrix are preferably nanocrystalline.
Abstract:
A microchannel phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 40 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The dimensions of the microchannel and the phosphors and the relationship between the microchannels and the phosphors is optimized so that the light output compares favorably with lower resolution non microchannel based scintillation screens. A photomultiplier can be integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications.
Abstract:
A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. A photomultiplier, which may be microchannel based, is integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications. The walls of the microchannels and/or the substrate surfaces include dielectric stack based light reflective coatings.
Abstract:
A high pressure gas discharge lamp and the method of making same utilizing integrated circuit fabrication techniques. The lamp is manufactured from heat and pressure resistant planar substrates in which cavities are etched, by integrated circuit manufacturing techniques, so as to provide a cavity forming the gas discharge tube. Electrodes are deposited in the cavity. The cavity is filled with gas discharge materials such as mercury vapor, sodium vapor or metal halide. The substrates are bonded together and channels may be etched in the substrate so as to provide a means for connection to the electrodes. Electrodeless RF activated lamps may also be fabricated by this technique. Micro-lasers may also be fabricated by this technique as well.
Abstract:
A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent nanocomposite matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The phosphors dispersed in the matrix may be nanocrystalline, or larger sized with the addition of non light emitting, non light scattering nanoparticles dispersed within the matrix material so as to match the index of refraction of the matrix material to that of the phosphors. The nanocomposite matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes.
Abstract:
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.
Abstract:
The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.
Abstract:
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.