公开(公告)号：US5270558A

公开(公告)日：1993-12-14

申请号：US24805

申请日：1993-03-01

Applicant: Robert K. Reich ,  Bernard Kosicki ,  Eugene D. Savoye

Inventor： Robert K. Reich ,  Bernard Kosicki ,  Eugene D. Savoye

IPC: H01L27/148 ,  H01L29/10 ,  H01L29/796

CPC classification number: H01L29/1091 ,  H01L27/14831

Abstract: A charge-coupled device having an array of pixel elements formed in a substrate, which device is operable in a first state to expand the depletion well regions of each pixel element into the substrate for storing incoming photoelectrons therein and in a second state to contract the expanded depletion well regions to prevent storage of photoelectrons in the contracted depletion well regions.

Abstract translation: 一种具有形成在衬底中的像素元件阵列的电荷耦合器件，该器件可在第一状态下操作，以将每个像素元件的耗尽阱区域扩展到衬底中，用于存储入射光电子，并且在第二状态下收缩 扩大的耗尽井区域以防止光电子在收缩的耗尽井区域中储存。

公开(公告)号：US4661854A

公开(公告)日：1987-04-28

申请号：US813423

申请日：1985-12-26

Applicant: Eugene D. Savoye

Inventor： Eugene D. Savoye

IPC: H01L27/148 ,  H01L27/14 ,  H04N5/359 ,  H04N5/3728 ,  H04N3/14

CPC classification number: H04N5/3595

Abstract: Significant reductions in transfer smear for charge sweep device imagers is made possible by performing the charge sweep operation during only the line retrace period of the operating cycle of the imager. Complete elimination of transfer smear is then possible by using an optical means for blocking the imager from incident illumination during said line retrace periods.

Abstract translation: 通过仅在成像器的操作周期的线回扫期间执行充电扫描操作，可以大大减少电荷扫描装置成像器的转印拖尾。 通过使用光学装置，可以完全消除转印涂片，从而在所述线回扫期间阻挡成像仪进入入射照明。

公开(公告)号：US4658497A

公开(公告)日：1987-04-21

申请号：US740719

申请日：1985-06-03

Applicant: Eugene D. Savoye ,  Walter F. Kosonocky ,  Lloyd F. Wallace

Inventor： Eugene D. Savoye ,  Walter F. Kosonocky ,  Lloyd F. Wallace

IPC: H01L27/148 ,  H01L31/18 ,  H01L21/26

CPC classification number: H01L27/14887 ,  H01L31/18 ,  Y10S148/083

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.The invention also includes an improved method of forming this array wherein the improvement comprises forming buried barrier regions containing a greater concentration of conductivity modifiers than the channel stops after the blooming drains are formed.

Abstract translation: 公开了具有改进的灵敏度的电荷转移类型的成像阵列。 该阵列包括多个基本上平行的电荷传输通道，其间具有通道阻挡件，其延伸到半导体本体中的距离。 至少一些通道挡板在其中具有开口的排水口以去除过量的光生电荷。 该改进包括势垒装置，其限制通过吸收身体中的光而产生的电荷流入通道，​​同时通过直接流动到开花的排水口来防止这种电荷的损失。 电势屏障装置包括从其中具有开放漏极区的那些通道阻挡区向主体延伸更远距离的掩埋阻挡区域。 本发明还包括形成该阵列的改进方法，其中改进包括形成掩埋阻挡区域，该掩埋阻挡区域包含比形成开花排水道之后的通道停止的更大浓度的导电性改进剂。

公开(公告)号：US4580169A

公开(公告)日：1986-04-01

申请号：US681437

申请日：1984-12-12

Applicant: Eugene D. Savoye

Inventor： Eugene D. Savoye

IPC: H01L27/148 ,  H04N5/353 ,  H04N5/372 ,  H04N3/15

CPC classification number: H04N3/1543 ,  H01L27/1464 ,  H01L27/14831

Abstract: A CCD imager of field transfer type having an image register statically clocked during image integration in a number of phases greater than it is dynamically clocked with during field transfer to a field storage register, when the image register and the field storage register are clocked in synchronous phase with each other.

Abstract translation: 当图像寄存器和场存储寄存器以同步方式计时时，具有在图像积分期间以大于其的多个相位静态计时的图像寄存器的CCD成像器在场传输到场存储寄存器期间被动态计时 相互相邻。

公开(公告)号：US06489992B2

公开(公告)日：2002-12-03

申请号：US09731259

申请日：2000-12-06

Applicant: Eugene D. Savoye

Inventor： Eugene D. Savoye

IPC: H04N5225

CPC classification number: H04N5/335 ,  H04N5/20 ,  H04N5/3696

Abstract: A CCD imaging system is provided, including a short focal length lens for accepting light from the scene to be imaged and a charge storage medium having a charge storage substrate that is curved in a selected nonplanar focal surface profile and located a selected distance from the lens with the focal surface facing the lens, the focal surface profile and the lens-to-substrate distance selected such that the light accepted by the lens is in focus at the position of the substrate. There is provided a support substrate on which the nonplanar charge storage substrate is supported to maintain the selected surface profile of the charge storage substrate. An array of pixels defined in the charge storage substrate by pixel interconnections is supported on the front side of the substrate, such that exposure of the substrate to light from the scene through the lens produces charge packets in the pixels, with the pixel interconnection providing selective electronic temporal control of transfer of charge packets from one pixel to another in the substrate. The invention provides a technique for suppressing dark current charge packet generation in the substrate pixels. An output circuit converts the charge packets in the pixels to an electrical pixel signal of output pixel values based on the light from the scene. A plurality of pixel values together form an image frame, the output pixel values being produced at a rate corresponding to the image frame rate, R.

Abstract translation: 提供了一种CCD成像系统，包括用于接收来自要成像的场景的光的短焦距透镜和具有电荷存储基板的电荷存储介质，所述电荷存储介质在所选择的非平面焦面表面轮廓中弯曲并且位于离所述透镜的选定距离处 焦点表面面向透镜，焦平面轮廓和透镜到基底的距离被选择使得透镜所接受的光在基板的位置处聚焦。 提供了支撑基板，其上支撑非平面电荷存储基板以维持电荷存储基板的所选择的表面轮廓。 通过像素互连限定在电荷存储基板中的像素阵列被支撑在基板的前侧，使得基板通过透镜从场景的光的曝光在像素中产生电荷分组，其中像素互连提供选择性 电子时间控制电荷分组从基板上的一个像素转移到另一个像素。 本发明提供一种用于抑制基板像素中的暗电荷电荷分组产生的技术。 输出电路基于来自场景的光将像素中的电荷分组转换为输出像素值的电像素信号。 多个像素值一起形成图像帧，输出像素值以对应于图像帧率R的速率产生。

公开(公告)号：US5940685A

公开(公告)日：1999-08-17

申请号：US739097

申请日：1996-10-28

Applicant: Andrew H. Loomis ,  James A. Gregory ,  Eugene D. Savoye ,  Bernard B. Kosicki

Inventor： Andrew H. Loomis ,  James A. Gregory ,  Eugene D. Savoye ,  Bernard B. Kosicki

IPC: H01L27/148 ,  H01L31/18 ,  H01L21/00

CPC classification number: H01L31/186 ,  H01L27/1464 ,  H01L27/14831 ,  Y02E10/50 ,  Y10S438/928

Abstract: The wafer thickness of a CCD front illuminated silicon wafer is reduced to about ten to twenty microns, the Al substrate is removed and a 5-35 nanometer silicon oxide layer is produced on the thinned back of the silicon wafer followed by implanting boron ions within the back surface to a depth up to about ten nanometers. Furnace annealing the wafer is now carried out, and the Al substrate is redeposited to enable the formation of gate contacts.

Abstract translation: CCD前照明硅晶片的晶片厚度减小到约十至二十微米，去除Al衬底，并在硅晶片的薄化背面上产生5-35纳米的氧化硅层，随后将硼离子注入 后表面深达约10纳米。 现在进行炉退火晶片，并且再次沉积Al衬底以形成栅极接触。

公开(公告)号：US4232245A

公开(公告)日：1980-11-04

申请号：US838713

申请日：1977-10-03

Applicant: Eugene D. Savoye ,  Thomas W. Edwards ,  Lloyd F. Wallace

Inventor： Eugene D. Savoye ,  Thomas W. Edwards ,  Lloyd F. Wallace

IPC: H01J29/45 ,  H01J29/44

CPC classification number: H01J29/455

Abstract: A target for vidicons and image intensifier tubes include a potential barrier less than about 1500 A from an input signal sensing surface. The targets also include various passivation means for stabilizing the energy level configuration along the input signal sensing surface by substantially fixing the valence or conduction band along that surface relative to the Fermi level.

Abstract translation: 视频和图像增强管的目标包括从输入信号感测表面小于大约1500A的势垒。 目标还包括各种钝化装置，用于通过基本上固定沿着该表面相对于费米能级的价带或导带来沿着输入信号感测表面稳定能级配置。