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    Low-light-level imaging and image processing
    3.
    发明授权
    Low-light-level imaging and image processing 失效
    低光级成像和图像处理

    公开(公告)号：US5880777A

    公开(公告)日：1999-03-09

    申请号：US632746

    申请日：1996-04-15

    申请人： Eugene D. Savoye ,  Allen M. Waxman ,  Robert K. Reich ,  Barry E. Burke ,  James A. Gregory ,  William H. McGonagle ,  Andrew H. Loomis ,  Bernard B. Kosicki ,  Robert W. Mountain ,  Alan N. Gove ,  David A. Fay ,  James E. Carrick

    发明人： Eugene D. Savoye ,  Allen M. Waxman ,  Robert K. Reich ,  Barry E. Burke ,  James A. Gregory ,  William H. McGonagle ,  Andrew H. Loomis ,  Bernard B. Kosicki ,  Robert W. Mountain ,  Alan N. Gove ,  David A. Fay ,  James E. Carrick

    IPC分类号： H01L27/148 ,  H04N5/20 ,  H04N5/335 ,  H04N5/351 ,  H04N5/361 ,  H04N5/372 ,  H04N5/225

    CPC分类号： H04N5/335 ,  H04N5/20 ,  H04N5/3696

    摘要： An imaging system is provided for imaging a scene to produce a sequence of image frames of the scene at a frame rate, R, of at least about 25 image frames per second. The system includes an optical input port, a charge-coupled imaging device, an analog signal processor, and an analog-to-digital processor (A/D). The A/D digitizes the amplified pixel signal to produce a digital image signal formatted as a sequence of image frames each of a plurality of digital pixel values and having a dynamic range of digital pixel values represented by a number of digital bits, B, where B is greater than 8. A digital image processor is provided for processing digital pixel values in the sequence of image frames to produce an output image frame sequence at the frame rate, R, representative of the imaged scene, with a latency of no more than about 1/R and a dynamic range of image frame pixel values represented by a number of digital bits, D, where D is less than B. The output image frame sequence is characterized by noise-limited resolution of at least a minimum number, N.sub.M, of line pairs per millimeter, referred to the charge-coupled imaging device pixel array, in an imaged scene as a function of illuminance of the input light impinging the charge-coupled imaging device pixels.

    摘要翻译： 提供一种成像系统，用于对场景进行成像，以每秒至少约25幅图像帧的帧速率R产生场景的图像序列序列。 该系统包括光输入端口，电荷耦合成像装置，模拟信号处理器和模数转换器（A / D）。 A / D数字化放大的像素信号以产生格式化为多个数字像素值中的每一个的一系列图像帧并且具有由多个数字位B表示的数字像素值的动态范围的数字图像信号，其中 B大于8.提供数字图像处理器用于处理图像帧序列中的数字像素值以产生代表成像场景的帧速率R的输出图像帧序列，等待时间不超过 约1 / R和由数字比特数D表示的图像帧像素值的动态范围，其中D小于B.输出图像帧序列的特征在于噪声限制分辨率至少最小数目NM 被称为电荷耦合成像装置像素阵列的线对每毫米在成像场景中作为照射电荷耦合成像装置像素的输入光的照度的函数。

    Method of fabricating solar cells
    4.
    发明授权
    Method of fabricating solar cells 失效
    制造太阳能电池的方法

    公开(公告)号：US4650695A

    公开(公告)日：1987-03-17

    申请号：US733710

    申请日：1985-05-13

    申请人： James A. Gregory

    发明人： James A. Gregory

    IPC分类号： H01L31/04 ,  H01L21/30 ,  B05D3/06

    CPC分类号： H01L21/3003 ,  Y10S148/083 ,  Y10S148/125

    摘要： An improvement to the process of passivation of polycrystalline silicon using a broad beam ion source wherein a controlled flow, greater in volume than the background level, of a low molecular weight hydrocarbon vapor is introduced into the vacuum system of the Kaufman-type ion source used for passivation. The amount of hydrocarbon introduced is between about one third of one percent and about ten percent, relative to the hydrogen flow, depending on the hydrocarbon. The process is especially advantageous in producing a passivated layer that functions adequately as a mask for metal plating.

    摘要翻译： 使用宽束离子源钝化多晶硅的过程的改进，其中将低分子量烃蒸气的体积大于背景水平的受控流量引入所使用的考夫曼型离子源的真空系统 用于钝化。 相对于氢气流，取决于烃类，引入的烃的量为约三分之一至百分之十。 该方法特别有利于制备充分发挥金属电镀掩模的钝化层。

    Method of passivating crystalline substrates
    6.
    发明授权
    Method of passivating crystalline substrates 失效
    钝化晶体的方法

    公开(公告)号：US4945065A

    公开(公告)日：1990-07-31

    申请号：US201559

    申请日：1988-06-02

    申请人： James A. Gregory ,  Jack I. Hanoka ,  Zinovy Y. Vayman

    发明人： James A. Gregory ,  Jack I. Hanoka ,  Zinovy Y. Vayman

    IPC分类号： H01L21/324 ,  H01L21/477

    CPC分类号： H01L21/477 ,  H01L21/324 ,  H01L21/3245

    摘要： A method of bulk passivating a crystalline or polycrystalline substrate made from silicon, germanium, gallium arsenide or other III-V compounds, and II-VI compounds by exposing the substrate to a fluorine ion beam created by a Kaufman ion source. The Kaufman ion source is controlled so that the intensity of and duration of exposure to the fluorine ion beam is sufficient to bulk passivate the substrate. Preferably, the substrate is preheated to a selected temperature prior to the ion beam exposure.

    摘要翻译： 通过将基板暴露于由Kaufman离子源产生的氟离子束，从而使硅，锗，砷化镓或其它III-V化合物和II-VI化合物制成的晶体或多晶基板的本体钝化方法。 控制Kaufman离子源，使得暴露于氟离子束的强度和持续时间足以使衬底大量钝化。 优选地，在离子束暴露之前将衬底预热至选定的温度。

    Antireflection coatings for silicon solar cells
    7.
    发明授权
    Antireflection coatings for silicon solar cells 失效
    硅太阳能电池防反射涂层

    公开(公告)号：US4691077A

    公开(公告)日：1987-09-01

    申请号：US733712

    申请日：1985-05-13

    申请人： James A. Gregory ,  Jack I. Hanoka ,  Zinovy Y. Vayman

    发明人： James A. Gregory ,  Jack I. Hanoka ,  Zinovy Y. Vayman

    IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/06

    CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： An improved optical match to a subsequently-formed antireflection overcoating is achieved by providing a silicon solar cell substrate with an altered surface layer that is formed by an ion-beam process, and has a refractive index between about 3.4 and about 3.6 at 633 nm and between about 3.6 and about 3.8 at 442 nm. The surface layer is formed by adding between about 2% and about 10% methane, by volume, to the hydrogen flow in a Kaufman type broad beam ion source.

    摘要翻译： 通过提供具有改变的表面层的硅太阳能电池基板来实现随后形成的抗反射外涂层的改进的光学匹配，所述改变的表面层通过离子束工艺形成，并且在633nm具有约3.4和约3.6之间的折射率， 在442nm处约3.6和约3.8之间。 通过在Kaufman型宽束离子源中的氢气流量之间加入约2％至约10％体积的甲烷来形成表面层。