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98 条记录 (耗时 0.049 秒)

    Molybdenum alloy x-ray targets having uniform grain structure
    18.
    发明申请
    Molybdenum alloy x-ray targets having uniform grain structure 审中-公开
    具有均匀晶粒结构的钼合金x射线靶

    公开(公告)号：US20060151072A1

    公开(公告)日：2006-07-13

    申请号：US10553841

    申请日：2004-04-15

    申请人： James Daily ,  Brad Lemon ,  Joseph Hirt ,  Prabhat Kumar ,  Gerhard Gille

    发明人： James Daily ,  Brad Lemon ,  Joseph Hirt ,  Prabhat Kumar ,  Gerhard Gille

    IPC分类号： C22C27/04 ,  C22F1/18

    CPC分类号： C22B34/34 ,  B21C23/001 ,  B21C23/01 ,  B21J1/025 ,  B21J5/00 ,  B22F3/16 ,  B22F3/162 ,  B22F3/24 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  C22C1/02 ,  C22C1/1094 ,  C22C27/04 ,  C22C32/0031 ,  C22F1/18 ,  C23C14/3414 ,  H01J2235/081 ,  H05H6/00 ,  B22F9/24 ,  B22F3/20 ,  B22F3/17

    摘要： The invention relates to a process for making a cross-directionally worked molybdenum plate, the process comprising: (a) reducing ammonium molybdate and forming molybdenum metal powder; (b) consolidating a molybdenum component comprised of molybdenum metal powder and an alloying element to a first workpiece, the alloying element being selected from the group consisting of titanium, zirconium, hafnium, carbon, lanthanum oxide, and combinations thereof; (c) thermally treating the first workpiece and subjecting the workpiece to thermo-mechanical forces in a first direction, and thereby forming a second workpiece; (d) thermally treating the second workpiece and subjecting the second workpiece to thermo-mechanical forces in a second direction that is different from the first direction; (e) subjecting the thermomechanically treated second workpiece to a recrystallization heat treatment step, and thereby forming a heat-treated crossdirectionally worked workpiece; and (f) subjecting the heat-treated, cross-directionally worked workpiece to a slicing step or a machining step, and thereby forming the cross-directionally worked molybdenum plate. The invention also relates to X-ray targets made from the process.

    摘要翻译： 本发明涉及制造交叉方向加工的钼板的方法，该方法包括：（a）还原钼酸铵并形成钼金属粉末; （b）将由钼金属粉末和合金元素组成的钼组分固结到第一工件，所述合金元素选自钛，锆，铪，碳，氧化镧及其组合; （c）热处理所述第一工件并使所述工件在第一方向上受到热机械力，从而形成第二工件; （d）对所述第二工件进行热处理并使所述第二工件在与所述第一方向不同的第二方向上进行热机械力; （e）对热机械处理的第二工件进行再结晶热处理步骤，从而形成经热处理的横向加工的工件; 和（f）对经热处理的交叉方向加工的工件进行切片步骤或机械加工步骤，从而形成交叉加工的钼板。 本发明还涉及由该方法制成的X射线靶。

    Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
    20.
    发明授权
    Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials 有权
    制备MoO2粉末的方法，由MoO 2粉末制成的产品，MoO 2薄膜的沉积以及使用这种材料的方法

    公开(公告)号：US07754185B2

    公开(公告)日：2010-07-13

    申请号：US11334140

    申请日：2006-01-18

    申请人： Lawrence F. McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wötting ,  Richard Nicholson

    发明人： Lawrence F. McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wötting ,  Richard Nicholson

    IPC分类号： C01G39/02 ,  B22F3/15

    CPC分类号： C01G39/02 ,  C01P2006/10 ,  C01P2006/12 ,  C01P2006/40 ,  H01L51/5206

    摘要： The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

    摘要翻译： 本发明涉及通过在旋转或船式炉中使用氢作为还原剂还原钼酸铵或三氧化钼的高纯度MoO 2粉末。 使用通过压制/烧结，热压和/或HIP将粉末固结制成用作溅射靶的盘，板或板。 使用合适的溅射方法或其它物理方法将MoO 2盘，板或板形式溅射在基板上，以提供具有所需膜厚度的薄膜。 在透明性，导电性，功函数，均匀性和表面粗糙度方面，薄膜具有与铟锡氧化物（ITO）和掺杂锌的ITO相当或优于电，光学，表面粗糙度和均匀性的性质。 含有MoO2和MoO2的薄膜可用于有机发光二极管（OLED），液晶显示器（LCD），等离子体显示面板（PDP），场发射显示器（FED），薄膜太阳能电池，低电阻率欧姆接触 ，以及其他电子和半导体器件。