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    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
    12.
    发明授权
    Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
    非易失性机电场效应器件和使用其的电路及其形成方法

    公开(公告)号：US07115901B2

    公开(公告)日：2006-10-03

    申请号：US10864186

    申请日：2004-06-09

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Bernhard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash

    IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L29/778

    CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

    摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.

    摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。 在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。 在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。 在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。 在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。 在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。

    Four terminal non-volatile transistor device
    13.
    发明授权
    Four terminal non-volatile transistor device 有权
    四端子非易失性晶体管器件

    公开(公告)号：US07075141B2

    公开(公告)日：2006-07-11

    申请号：US10811191

    申请日：2004-03-26

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L27/10 ,  H01L29/788

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C16/0416 ,  G11C2213/17 ,  H01L27/115 ,  H01L29/7881 ,  Y10S977/708 ,  Y10S977/932

    摘要： A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.

    摘要翻译： 四端非易失性晶体管器件。 非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 浮栅结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上。 控制门由半导体或导电材料中的至少一种制成，并与相应的端子电连通。 机电可偏转的纳米管开关元件与浮动栅极结构和控制栅极结构中的一个电连通，并且被定位成机电可偏转地与浮动栅极结构和控制栅极结构中的另一个接触。 当纳米管开关元件与控制栅极和浮置栅极两者连通时，控制栅极可用于调制沟道区的导电性。 纳米管切换元件可以由单壁碳纳米管单层的多孔织物形成。 在某些实施例中，纳米管制品相对于水平基底垂直悬挂。 在某些实施例中，释放栅极和释放节点以与纳米管开关元件隔开的关系定位，并且响应于释放节点上的信号，释放门电磁机械地使纳米管开关元件偏转与 控制门和浮动门。 在某些实施例中，纳米管开关元件与控制栅极和浮置栅极之间的接触是非易失性状态。 在某些实施例中，该装置占据8F 2的面积。

    Nanotube-on-gate FET structures and applications
    14.
    发明授权
    Nanotube-on-gate FET structures and applications 有权
    纳米管栅极FET结构和应用

    公开(公告)号：US07294877B2

    公开(公告)日：2007-11-13

    申请号：US10811373

    申请日：2004-03-26

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L51/30

    CPC分类号： H01L51/055 ,  B82Y10/00 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  G11C2213/17 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052

    摘要： Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.

    摘要翻译： 纳米管栅极FET结构及其应用，包括只需要2n条控制线的n 2条交叉。 非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域以及设置在源极和漏极区域之间的第二半导体类型的材料的沟道区域。 栅极结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上方的绝缘体上。 控制门由半导体或导电材料中的至少一种制成。 机电偏转型纳米管开关元件与栅极结构和控制栅极结构中的一个固定接触，并且不与栅极结构和控制栅极结构中的另一个固定接触。 该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。 网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。 该装置的某些实施例具有约4F 2的面积。 其他实施例包括释放线与纳米管开关元件间隔开定位，并且具有平行于源极和漏极扩散的取向的水平取向。 其他实施例提供了具有n 2个非易失性晶体管器件的n≥2的交叉开关阵列，但是仅需要2n个控制线。

    Sensor platform using a non-horizontally oriented nanotube element
    15.
    发明授权
    Sensor platform using a non-horizontally oriented nanotube element 有权
    传感器平台使用非水平取向的纳米管元件

    公开(公告)号：US07385266B2

    公开(公告)日：2008-06-10

    申请号：US10844883

    申请日：2004-05-12

    申请人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L29/66

    CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

    摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

    摘要翻译： 介绍传感器平台及其制作方法。 描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。 在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。 在某些实施例中，这种传感器元件包括一个或多个原始纳米管。 在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。 在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。 在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。 在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

    Sensor platform using a horizontally oriented nanotube element
    16.
    发明授权
    Sensor platform using a horizontally oriented nanotube element 有权
    传感器平台采用水平取向的纳米管元件

    公开(公告)号：US07780918B2

    公开(公告)日：2010-08-24

    申请号：US10844913

    申请日：2004-05-12

    申请人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： G01N27/00

    CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

    摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.

    摘要翻译： 描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。 在某些实施方案中，传感器元件对分析物具有亲和力。 在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。 在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。 在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。 在某些实施例中，大规模阵列包括多个传感器。

    Non-volatile RAM cell and array using nanotube switch position for information state
    18.
    发明授权
    Non-volatile RAM cell and array using nanotube switch position for information state 有权
    非易失性RAM单元和阵列使用纳米管开关位置进行信息状态

    公开(公告)号：US07113426B2

    公开(公告)日：2006-09-26

    申请号：US10810963

    申请日：2004-03-26

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： G11C11/34 ,  G11C11/00

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025

    摘要： Non-Volatile RAM Cell and Array using Nanotube Switch Position for Information State. A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor with first, second and third nodes. The first and second nodes are in respective electrical communication with the bit line and the word line. Each cell further includes an electromechanically deflectable switch, having a first, second and third node. The first node is in electrical communication with the release line, and a third node is in electrical communication with the third node of the cell selection transistor. The electromechanically deflectable switch includes a nanotube switching element physically positioned between the first and third nodes of the switch and in electrical communication with the second node of the switch. The second node of the switch is in communication with a reference signal. Each nanotube switching element is deflectable into contact with the third node of the switch in response to signals at the first and second node of the cell selection transistor and is releasable from such contact in response to a signal at the release line. In preferred embodiments, the cell selection transistor is a FET and the second node of the transistor is a gate of the FET.

    摘要翻译： 非易失性RAM单元和阵列使用纳米管切换位置信息状态。 非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。 每个存储单元包括具有第一，第二和第三节点的单元选择晶体管。 第一和第二节点与位线和字线分别电气通信。 每个单元还包括具有第一，第二和第三节点的机电偏转开关。 第一节点与释放线电连通，第三节点与小区选择晶体管的第三节点电通信。 机电可偏转开关包括物理地位于开关的第一和第三节点之间并与开关的第二节点电通信的纳米管开关元件。 交换机的第二个节点与参考信号通信。 每个纳米管开关元件响应于电池选择晶体管的第一和第二节点处的信号而偏转成与开关的第三节点接触，并且响应于释放线处的信号而可从该接触件释放。 在优选实施例中，电池选择晶体管是FET，晶体管的第二节点是FET的栅极。

    Devices having horizontally-disposed nanofabric articles and methods of making the same
    20.
    发明授权
    Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
    具有水平布置的纳米制品的装置及其制造方法

    公开(公告)号：US07304357B2

    公开(公告)日：2007-12-04

    申请号：US11193795

    申请日：2005-07-29

    申请人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L29/84

    CPC分类号： G11C13/025 ,  B81B2203/0338 ,  B81B2203/04 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/22 ,  G11C11/56 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L51/0048 ,  H01L2221/1094 ,  Y10S977/724 ,  Y10S977/734 ,  Y10S977/742

    摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.

    摘要翻译： 描述了具有水平布置的纳米制品的新器件及其制造方法。 分立的机电装置包括具有导电迹线的结构。 定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。 在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。 低电阻信号路径与所定义的纳米片段电连通。 在某些实施例中，该结构包括限定的导电迹线设置的间隙。 限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。 在某些实施例中，夹具设置在纳米管织物片段的两端中的每一个处，并且在纳米管织物片段的至少一部分上大致位于限定间隙的边缘处。 在某些实施例中，夹具由导电材料制成。 在某些实施方案中，纳米管贴片和迹线之间的接触是非挥发性状态。 在某些实施方案中，纳米管贴片和迹线之间的接触是挥发性状态。 在某些实施例中，至少一个导电迹线具有界面材料，以改变纳米管织物片段和导电迹线之间的吸引力。