Equipment management system
    11.
    发明授权
    Equipment management system 有权
    设备管理系统

    公开(公告)号:US08934117B2

    公开(公告)日:2015-01-13

    申请号:US11484135

    申请日:2006-07-10

    摘要: Systems and methods of management of electronic office equipment through automated monitoring and reporting of usage and status are disclosed. A monitoring agent monitors electronic office equipment on a network and collects usage and status information to send to a control system. The control system can use the usage and status information to compile various reports responsive to the received information. The system allows for the automatic assessment, monitoring, re-supply, maintenance, and billing of networks of printing devices from a variety of different manufacturers. In some embodiments, the system enables a pay per use lease arrangement.

    摘要翻译: 披露了电子办公设备管理的系统和方法,通过自动监测和报告使用情况和状况。 监控代理监控网络上的电子办公设备,并收集使用和状态信息,以发送给控制系统。 控制系统可以使用使用和状态信息来响应所接收的信息来编制各种报告。 该系统允许从各种不同的制造商自动评估,监控,重新供应,维护和计费打印设备的网络。 在一些实施例中,该系统实现了每次使用租金安排。

    Indication of improperly molded parts
    13.
    发明授权
    Indication of improperly molded parts 有权
    指示不正确模制的零件

    公开(公告)号:US08791186B2

    公开(公告)日:2014-07-29

    申请号:US13312550

    申请日:2011-12-06

    摘要: A method of determining that a thermoplastic was insufficiently dried before forming into a molded plastic part. The method comprises preparing a mixture of a thermoplastic polymer and an off-gassing compound, wherein the off-gassing compound is selected to release all water of hydration in response to target drying conditions specified for the thermoplastic polymer. The mixture is dried at actual drying conditions, and then heated to reduce the viscosity of the thermoplastic polymer and allow the mixture to flow. The mixture is then made to flow into a mold to form a plastic part at a molding temperature, wherein the molding temperature will cause any remaining water of hydration in the off-gas sing compound to off-gas and form surface irregularities in the plastic part. Non-limiting examples of the off-gassing compound include hydrated metal halides and ionic hydrates.

    摘要翻译: 在形成模制塑料部件之前确定热塑性塑料未充分干燥的方法。 该方法包括制备热塑性聚合物和脱气化合物的混合物,其中根据为热塑性聚合物规定的目标干燥条件,选择脱气化合物释放所有的水合水。 将混合物在实际干燥条件下干燥,然后加热以降低热塑性聚合物的粘度并允许混合物流动。 然后将混合物流入模具以在成型温度下形成塑料部件,其中成型温度将使废气中化合物中的任何剩余的水合水排出废气,并在塑料部件中形成表面不规则 。 脱气化合物的非限制性实例包括水合金属卤化物和离子水合物。

    Bottom ash discharging device for coal-fired boiler
    14.
    发明授权
    Bottom ash discharging device for coal-fired boiler 有权
    燃煤锅炉底灰排放装置

    公开(公告)号:US08746157B2

    公开(公告)日:2014-06-10

    申请号:US13407785

    申请日:2012-02-29

    IPC分类号: F23J1/00 F23J1/02 C10J3/34

    CPC分类号: F23J1/02

    摘要: A bottom ash discharging device for a coal-fired boiler including: a clinker case, installed between a bottom ash hopper outlet of the coal-fired boiler and a bottom ash conveyer, an impact bar including a plurality of heat-resistant metal rods supporting inside the clinker case, a clinker crusher, installed above the impact bar for crushing the clinker, and a guiding device, installed between the bottom ash hopper outlet and the clinker crusher for limiting the clinker to drop into the clinker crushing area of the clinker crusher. The bottom ash discharging device ensures that the clinkers drop from the bottom ash hopper outlet to the rear area of the clinker crusher, and that the impact bar can be replaced and repaired without stopping the coal-fired boiler.

    摘要翻译: 一种用于燃煤锅炉的底灰排放装置,包括:安装在燃煤锅炉的底灰料斗出口和底灰输送机之间的熟料箱,包括多个支撑在内部的耐热金属棒的冲击杆 熟料盒,熟料破碎机,安装在冲击棒上方,用于破碎熟料;以及引导装置,安装在底灰斗出料口和熟料破碎机之间,用于限制熟料落入熟料破碎机的熟料破碎区域。 底灰排放装置可确保熟料从底灰料斗出口落到熟料破碎机的后部区域,并可在不停止燃煤锅炉的情况下更换和修理冲击棒。

    MTJ MRAM WITH STUD PATTERNING
    16.
    发明申请
    MTJ MRAM WITH STUD PATTERNING 有权
    MTJ MRAM与STUD PATTERNING

    公开(公告)号:US20140042567A1

    公开(公告)日:2014-02-13

    申请号:US13572197

    申请日:2012-08-10

    IPC分类号: H01L43/12 H01L43/02

    CPC分类号: H01L43/12 H01L43/08

    摘要: Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The first embodiment of the invention described includes a top electrode and a stud mask. In the second and third embodiments the stud mask is a conductive material and also serves as the top electrode. In embodiments after the stud mask is formed a spacer sleeve is formed around it to initially increase the masking width for a phase of etching. The spacer is removed for further etching, to create step structures that are progressively transferred down into the layers forming the MTJ pillar. In one embodiment the spacer sleeve is formed by net polymer deposition during an etching phase.

    摘要翻译: 描述了包括螺柱掩模和用于MTJ蚀刻以形成比MTJ柱的其余部分宽的底部电极的可移除间隔套的多层蚀刻掩模的使用。 所描述的本发明的第一实施例包括顶部电极和螺柱掩模。 在第二和第三实施例中,螺柱掩模是导电材料,并且还用作顶部电极。 在形成螺柱掩模之后的实施例中,在其周围形成间隔套,以最初增加蚀刻阶段的掩模宽度。 去除间隔物用于进一步蚀刻,以产生逐渐转移到形成MTJ柱的层中的阶梯结构。 在一个实施例中,间隔套筒是在蚀刻阶段期间通过净聚合物沉积形成的。

    Method for Bit-Error Rate Testing of Resistance-based RAM Cells Using a Reflected Signal
    17.
    发明申请
    Method for Bit-Error Rate Testing of Resistance-based RAM Cells Using a Reflected Signal 有权
    使用反射信号的基于电阻的RAM单元的误码率测试方法

    公开(公告)号:US20130294144A1

    公开(公告)日:2013-11-07

    申请号:US13462708

    申请日:2012-05-02

    IPC分类号: G11C11/00

    摘要: A testing method is described for performing a fast bit-error rate (BER) measurement on resistance-based RAM cells, such MTJ cells, at the wafer or chip level. Embodiments use one or more specially designed test memory cells fabricated with direct electrical connections between the two electrodes of the cell and external contact pads (or points) on the surface of the wafer (or chip). In the test setup the memory cell is connected an impedance mismatched transmission line through a probe for un-buffered, fast switching of the cell between the high and low resistance states without the need for CMOS logic to select and drive the cell. The unbalanced transmission line is used generate signal reflections from the cell that are a function of the resistance state. The reflected signal is used to detect whether the test cell has switched as expected.

    摘要翻译: 描述了一种测试方法,用于在晶片或芯片级上对基于电阻的RAM单元(如MTJ单元)执行快速误码率(BER)测量。 实施例使用一个或多个专门设计的测试存储单元,该测试存储单元通过电池的两个电极和晶片(或芯片)表面上的外部接触垫(或点)之间的直接电连接制造。 在测试设置中,存储单元通过探头连接阻抗不匹配的传输线,用于高电阻和低电阻状态之间的单元的非缓冲,快速切换,而不需要CMOS逻辑来选择和驱动单元。 使用不平衡传输线从电池产生作为电阻状态的函数的信号反射。 反射信号用于检测测试单元是否按预期切换。

    MRAM fabrication method with sidewall cleaning
    18.
    发明授权
    MRAM fabrication method with sidewall cleaning 有权
    MRAM制造方法与侧壁清洁

    公开(公告)号:US08574928B2

    公开(公告)日:2013-11-05

    申请号:US13443818

    申请日:2012-04-10

    IPC分类号: H01L21/00

    CPC分类号: H01L27/222 H01L43/12

    摘要: Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

    摘要翻译: 描述了用于MRAM的制造方法,其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中,首先制造柱,然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属,因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样,在侧壁被蚀刻清洁之后,进行位线互连处理。

    Heat dissipation device with rotation-locked heat sink
    19.
    发明授权
    Heat dissipation device with rotation-locked heat sink 失效
    具有旋转锁定散热器的散热装置

    公开(公告)号:US08567484B2

    公开(公告)日:2013-10-29

    申请号:US12773001

    申请日:2010-05-03

    申请人: Heng Liu Jing Zhang

    发明人: Heng Liu Jing Zhang

    IPC分类号: H05K7/20

    摘要: An exemplary heat dissipation device includes a heat sink and a fixing frame. The heat sink defines receiving depressions at an outer peripheral surface thereof. The fixing frame includes a peripheral side plate encircling the heat sink, fixing legs extending downwards from the side plate, and an elastic member disposed on the side plate. Protruding members extend inwardly from the fixing legs. The heat sink is rotatably received in the fixing frame. When the heat sink is in an unlocked state, the protruding members align with the receiving depressions, respectively. When the heat sink is rotated to a locked state, the protruding members abut a bottom of the heat sink thereby limiting axial movement of the heat sink relative to the fixing frame and the elastic member is received in a corresponding receiving depression and limit rotation of the heat sink in both clockwise and counterclockwise directions.

    摘要翻译: 示例性的散热装置包括散热器和固定框架。 散热器在其外周表面限定接收凹部。 固定框架包括围绕散热器的周边侧板,从侧板向下延伸的固定脚和设置在侧板上的弹性构件。 突起构件从固定腿向内延伸。 散热器可旋转地容纳在固定框架中。 当散热器处于解锁状态时,突出部件分别与接收凹部对准。 当散热器旋转到锁定状态时,突出构件邻接散热器的底部,从而限制散热器相对于固定框架的轴向运动,并且弹性构件被容纳在相应的接收凹陷中并限制 顺时针和逆时针方向散热。

    METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY
    20.
    发明申请
    METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY 有权
    制造高密度非挥发性磁记忆的方法

    公开(公告)号:US20130244344A1

    公开(公告)日:2013-09-19

    申请号:US13610587

    申请日:2012-09-11

    IPC分类号: H01L43/12

    摘要: Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described. Embodiments are described that use a self-aligned double patterning method for one or both orthogonal line patterning steps to achieve dense arrays of MTJs with feature dimensions one half of the minimum photo lithography feature size (F). In one set of embodiments, the materials and thicknesses of the stack of layers that provide the masking function are selected so that after the initial set of mask pads have been patterned, a sequence of etching steps progressively transfers the mask pad shape through the multiple mask layer and down through all of the MTJ cell layers to the form the complete MTJ pillars. In another set of embodiments, the MTJ/BE stack is patterned into parallel lines before the top electrode layer is deposited.

    摘要翻译: 描述了使用两个正交线图案化步骤制造MTJ阵列的方法。 描述了使用用于一个或两个正交线图案化步骤的自对准双图案化方法来实现特征尺寸为最小光刻特征尺寸(F)的一半的MTJ的致密阵列的实施例。 在一组实施例中,选择提供掩模功能的层叠层的材料和厚度,使得在初始掩模焊盘组被图案化之后,一系列蚀刻步骤逐渐地将掩模焊盘形状传递通过多个掩模 通过所有的MTJ单元层的层和下层形成完整的MTJ柱。 在另一组实施例中,在沉积顶部电极层之前,将MTJ / BE叠层图案化成平行线。