Abstract:
Methods and apparatus are disclosed to simultaneously, wirelessly test semiconductor components formed on a semiconductor wafer. The semiconductor components transmit respective outcomes of a self-contained testing operation to wireless automatic test equipment via a common communication channel. Multiple receiving antennas observe the outcomes from multiple directions in three dimensional space. The wireless automatic test equipment determines whether one or more of the semiconductor components operate as expected and, optionally, may use properties of the three dimensional space to determine a location of one or more of the semiconductor components. The wireless testing equipment may additionally determine performance of the semiconductor components by detecting infrared energy emitted, transmitted, and/or reflected by the semiconductor wafer before, during, and/or after a self-contained testing operation.
Abstract:
An apparatus includes a cascode amplifier. The cascode amplifier includes a first transistor and a second transistor. The cascode amplifier is configured to receive a first bias voltage, a second bias voltage, and a signal. The cascode amplifier is also configured to amplify the signal based at least on the first bias voltage and the second bias voltage. The apparatus also includes a first feedback module and a second feedback module. The first feedback module is configured to adjust the first bias voltage based at least on the amplified signal. The second feedback module is configured to adjust the second bias voltage based at least on a voltage distribution across the first transistor and the second transistor. A system and method for maintaining cascode amplifier performance are also provided.
Abstract:
Methods and systems for configuring a leaky wave antenna (LWA) utilizing micro-electromechanical systems (MEMS) are disclosed and may include configuring a resonant frequency of one or more LWAs in a wireless device utilizing MEMS actuation. RF signals may be communicated using the LWAs. The LWAs may be integrated in metal layers in a chip, an integrated circuit package, and/or a printed circuit board in the wireless device. The LWAs may include microstrip waveguides where a cavity height of the LWAs may be dependent on a spacing between conductive lines in the microstrip waveguides. The LWAs may be configured to transmit the wireless signals at a desired angle. The integrated circuit package may be affixed to a printed circuit board and an integrated circuit may be flip-chip-bonded to the integrated circuit package. An air gap may be integrated adjacent to one or more of the metal layers for the MEMS actuation.
Abstract:
A transmitter front-end for wireless chip-to-chip communication, and potentially for other, longer range (e.g., several meters or several tens of meters) device-to-device communication, is disclosed. The transmitter front-end includes a distributed power amplifier capable of providing an output signal with sufficient power for wireless transmission by an on-chip or on-package antenna to another nearby IC chip or device located several meters or several tens of meters away. The distributed power amplifier can be fully integrated (i.e., without using external components, such as bond wire inductors) on a monolithic silicon substrate using, for example, a complementary metal oxide semiconductor (CMOS) process.