Immersion Lithography System Using Direction-Controlling Fluid Inlets
    11.
    发明申请
    Immersion Lithography System Using Direction-Controlling Fluid Inlets 有权
    浸入式光刻系统使用方向控制流体入口

    公开(公告)号:US20120236276A1

    公开(公告)日:2012-09-20

    申请号:US13482879

    申请日:2012-05-29

    CPC classification number: G03B27/52 G03F7/70341

    Abstract: Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.

    Abstract translation: 描述了使用方向控制流体入口的浸渍光刻系统和方法。 根据本公开的一个实施例,浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。 该装置还包括多个方向控制流体入口,其邻近透镜组件设置,多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制 相对于多个方向控制流体入口中的其它流体入口。

    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY
    12.
    发明申请
    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY 有权
    装置和方法

    公开(公告)号:US20080309891A1

    公开(公告)日:2008-12-18

    申请号:US11762651

    申请日:2007-06-13

    CPC classification number: G03F7/70341

    Abstract: Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.

    Abstract translation: 提供了使用屏蔽模块的浸渍光刻设备和方法。 一种浸没式光刻设备,包括具有成像透镜的透镜模块,位于透镜模块下方的被配置用于保持用于处理的基板的基板台,用于在透镜模块和基板之间的空间中提供浸没流体的流体模块 衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

    System and method for photolithography in semiconductor manufacturing
    13.
    发明授权
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号:US07371671B2

    公开(公告)日:2008-05-13

    申请号:US11050312

    申请日:2005-02-03

    CPC classification number: H01L21/76802 H01L21/31144

    Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层,并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后,第二层用于修改基板以产生半导体器件的至少一部分。

    Photoresist and patterning process
    14.
    发明授权
    Photoresist and patterning process 有权
    光刻胶和图案化工艺

    公开(公告)号:US08956806B2

    公开(公告)日:2015-02-17

    申请号:US12562761

    申请日:2009-09-18

    CPC classification number: G03F7/0045 G03F7/0382 G03F7/0392 G03F7/091 G03F7/11

    Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

    Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层,其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分。

    Apparatus and method for immersion lithography
    15.
    发明授权
    Apparatus and method for immersion lithography 有权
    浸没式光刻装置及方法

    公开(公告)号:US08564759B2

    公开(公告)日:2013-10-22

    申请号:US11697469

    申请日:2007-04-06

    CPC classification number: B08B3/12 G03F7/2041 G03F7/70341 G03F7/70925

    Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

    Abstract translation: 光刻设备包括成像透镜模块,位于成像透镜模块下方并构造成保持基板的基板台,以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口,用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元,被配置为向清洁流体提供超声波能量。

    Apparatus and method for immersion lithography
    17.
    发明授权
    Apparatus and method for immersion lithography 有权
    浸没式光刻装置及方法

    公开(公告)号:US08125611B2

    公开(公告)日:2012-02-28

    申请号:US11762651

    申请日:2007-06-13

    CPC classification number: G03F7/70341

    Abstract: Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.

    Abstract translation: 提供了使用屏蔽模块的浸渍光刻设备和方法。 一种浸没式光刻设备,包括具有成像透镜的透镜模块,位于透镜模块下方的被配置用于保持用于处理的基板的基板台,用于在透镜模块和基板之间的空间中提供浸没流体的流体模块 衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

    Immersion lithography apparatus and methods
    18.
    发明授权
    Immersion lithography apparatus and methods 有权
    浸渍光刻设备及方法

    公开(公告)号:US07986395B2

    公开(公告)日:2011-07-26

    申请号:US11427421

    申请日:2006-06-29

    CPC classification number: G03F7/70925 G03F7/70341

    Abstract: A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.

    Abstract translation: 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 以及适于清洁光刻设备的清洁模块。 清洁模块选自超声波单元,洗涤器,流体射流,静电清洁器及其组合。

    Immersion Lithography System Using A Sealed Wafer Bath
    19.
    发明申请
    Immersion Lithography System Using A Sealed Wafer Bath 有权
    浸入式平版印刷系统使用密封晶片浴

    公开(公告)号:US20080106715A1

    公开(公告)日:2008-05-08

    申请号:US11671046

    申请日:2007-02-05

    CPC classification number: G03F7/70866 G03F7/70341

    Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and

    Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备,其包括透镜组件,该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台,晶片台包括沿着晶片的顶部边缘设置在密封环框架上的密封环, 晶片台,用于密封晶片边缘与晶片台之间的间隙的密封环。 该实施例还包括用于保持浸没流体的流体箱,相对于晶片台定位的流体箱,用于使保留在晶片台上的晶片完全浸没在浸没流体中,并且覆盖设置在流体的至少一部分上 罐,用于在流体箱内提供温度控制,流体丰富的环境; 和

    Patterning process and photoresist with a photodegradable base
    20.
    发明授权
    Patterning process and photoresist with a photodegradable base 有权
    图案化工艺和光致抗蚀剂,具有可光降解基材

    公开(公告)号:US08658344B2

    公开(公告)日:2014-02-25

    申请号:US13534961

    申请日:2012-06-27

    Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

    Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层,其中抗蚀剂层包括聚合物,光致酸产生剂,电子受体和可光降解的碱; 执行曝光处理,其用辐射曝光抗蚀剂层的一部分,其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。

Patent Agency Ranking