公开(公告)号：US08486340B2

公开(公告)日：2013-07-16

申请号：US12776594

申请日：2010-05-10

申请人： Ju Dong Lee ,  Hyoung Jae Kim ,  Sung Ryul Kim ,  Sang Yeon Hong ,  Hye Ok Park ,  Mun Keun Ha ,  Seok Ku Jeon ,  Hoon Ahn ,  Ta Kwan Woo

发明人： Ju Dong Lee ,  Hyoung Jae Kim ,  Sung Ryul Kim ,  Sang Yeon Hong ,  Hye Ok Park ,  Mun Keun Ha ,  Seok Ku Jeon ,  Hoon Ahn ,  Ta Kwan Woo

IPC分类号： B01J19/00

CPC分类号： F17D3/14 ,  B01J10/00 ,  B01J19/1806 ,  B01J2219/00063 ,  B01J2219/00076 ,  B01J2219/00162 ,  B01J2219/00182 ,  B01J2219/00763 ,  C01B32/55 ,  C10L3/06 ,  C10L3/108 ,  C10L5/363 ,  F17D1/05 ,  Y02E60/36 ,  Y02P30/30

摘要： Disclosed herein is an apparatus for continuously producing and pelletizing gas hydrates. The apparatus includes a gas supply unit, a water supply unit and a reactor. Gas and water are respectively supplied from the gas supply unit and the water supply unit into the reactor. The gas and water react with each other in the reactor. The reactor includes a dual cylinder unit which forms a gas hydrate in such a way as to squeeze a slurry of reaction water formed by the reaction between the gas and water. The dual cylinder unit includes an upper cylinder, a lower cylinder and a connection pipe which connects the upper cylinder to the lower cylinder. The connection pipe has passing holes through which the reaction water in the reactor flows into and out of the connection pipe.

摘要翻译： 本文公开了一种用于连续生产和造粒气体水合物的装置。 该装置包括气体供应单元，供水单元和反应器。 气体和水分别从气体供应单元和供水单元供应到反应器中。 气体和水在反应器中彼此反应。 反应器包括双缸单元，其形成气体水合物，以挤压由气体和水之间的反应形成的反应水的浆料。 双缸单元包括上气缸，下气缸和将上气缸连接到下气缸的连接管。 连接管具有通孔，反应器中的反应水通过该通孔穿过和连接管流出。

公开(公告)号：US08174660B2

公开(公告)日：2012-05-08

申请号：US12332249

申请日：2008-12-10

申请人： Sung Ryul Kim ,  Yong-Mo Choi ,  Sung-Hoon Yang ,  Hwa-Yeul Oh ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Seong-Hun Kim

发明人： Sung Ryul Kim ,  Yong-Mo Choi ,  Sung-Hoon Yang ,  Hwa-Yeul Oh ,  Kap-Soo Yoon ,  Jae-Ho Choi ,  Seong-Hun Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  Y10T428/24975

摘要： Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device.

摘要翻译： 提供一种金属线，其形成方法和使用该线的显示器。 为了增加具有CuO / Cu多层结构的金属线的电阻并防止起泡形成，使用含氮气体和含硅气体或使用氢或氩作为含硅气体进行等离子体处理 。 因此，在铜层上薄膜地形成诸如SiN x或Si层的等离子体处理层，从而防止铜层的电阻增加，并且还防止由氧化铜层损坏引起的起泡形成。 因此，可以提高铜线的可靠性，从而提高装置的可靠性。

公开(公告)号：US20080202689A1

公开(公告)日：2008-08-28

申请号：US12113901

申请日：2008-05-01

申请人： Sung Ryul Kim

发明人： Sung Ryul Kim

IPC分类号： H01L21/306 ,  C23C16/44

CPC分类号： H01J37/32724 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32568

摘要： A plasma processing apparatus includes: a chamber; an insulating member disposed in an upper portion of the chamber; a ground electrode formed at a side wall of the chamber, a ground potential being applied to the ground electrode; and a lower electrode disposed in a lower portion of the chamber, a substrate being placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes.According to an aspect of the present invention, particles accumulated in the central portion on a lower surface, an edge area of an upper surface, a side, and an edge area of the lower surface of the substrate can be effectively removed.

摘要翻译： 一种等离子体处理装置，包括：室; 设置在所述室的上部的绝缘构件; 形成在所述室的侧壁处的接地电极，将地电位施加到所述接地电极; 以及设置在所述室的下部的下部电极，在所述下部电极上配置有基板，其中，所述下部电极被分割为多个电极。 根据本发明的一个方面，可以有效地除去积聚在基板的下表面的中心部分，上表面的边缘区域，侧面和边缘区域中的颗粒。

公开(公告)号：US5986303A

公开(公告)日：1999-11-16

申请号：US911351

申请日：1997-08-07

申请人： Jong Moo Choi ,  Sung Ryul Kim ,  Young Keun Park

发明人： Jong Moo Choi ,  Sung Ryul Kim ,  Young Keun Park

IPC分类号： H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L29/66825 ,  H01L27/115

摘要： A flash memory device has improved erasable characteristics and device reliability. The flash memory device includes a semiconductor substrate and heavily doped impurity regions formed spaced apart from one another by a predetermined distance in the semiconductor substrate in a first direction. First and second isolation regions are formed spaced apart from each other by a second predetermined distance on the semiconductor substrate, in a second direction which is preferably at a right angle to the first direction. Each of the floating gates are formed between the first and second isolation regons and between the heavily doped impurity regions. The control gate lines are formed between the first and second isolation regions, and over the floating gates in the same direction as the first and second isolation regions. An erase gate line is formed to have a narrower width than the floating gate, and is formed over the floating gate, preferably at a right angle to the control gate line.

摘要翻译： 闪存器件具有改进的可擦除特性和器件可靠性。 闪速存储器件包括在第一方向上在半导体衬底中彼此间隔开预定距离形成的半导体衬底和重掺杂杂质区。 第一隔离区域和第二隔离区域在第二方向上在半导体衬底上彼此间隔开第二预定距离，优选地与第一方向成直角。 每个浮置栅极形成在第一和第二隔离晶体之间以及重掺杂杂质区之间。 控制栅极线形成在第一和第二隔离区域之间，并且在与第一和第二隔离区域相同的方向上在浮动栅极上形成。 擦除栅极线形成为具有比浮动栅极窄的宽度，并且形成在浮动栅极上，优选地与控制栅极线成直角。

公开(公告)号：US08598587B2

公开(公告)日：2013-12-03

申请号：US13209188

申请日：2011-08-12

申请人： Yun Jong Yeo ,  Hong-Kee Chin ,  Byeong Hoon Cho ,  Ki-Hun Jeong ,  Jung Suk Bang ,  Woong Kwon Kim ,  Sung Ryul Kim ,  Dae Cheol Kim ,  Kun-Wook Han

发明人： Yun Jong Yeo ,  Hong-Kee Chin ,  Byeong Hoon Cho ,  Ki-Hun Jeong ,  Jung Suk Bang ,  Woong Kwon Kim ,  Sung Ryul Kim ,  Dae Cheol Kim ,  Kun-Wook Han

IPC分类号： H01L31/0376

CPC分类号： G06F3/0412 ,  G06F3/0421 ,  G06F2203/04103

摘要： An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

摘要翻译： 提供了防止半导体层损坏并防止源电极和漏极的断开和短路的光学传感器以及光学传感器的制造方法。 光学传感器包括：基板; 包括设置在所述基板上的第一半导体层的红外线感测薄膜晶体管; 包括设置在所述基板上的第二半导体层的可见光线感测薄膜晶体管; 开关薄膜晶体管，其包括设置在所述基板上的第三半导体层; 以及半导体钝化层，其包围第一半导体层，第二半导体层和第三半导体层中的至少一个的端部的上表面和侧面。