公开(公告)号：US07486545B2

公开(公告)日：2009-02-03

申请号：US11264587

申请日：2005-11-01

申请人： Tai Min ,  Po-Kang Wang

发明人： Tai Min ,  Po-Kang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A memory element uses a conventional MTJ for reading purposes and a separate magnetic reference stack which is briefly heated while information is written into it. This information is then magnetostatically imposed on the MTJ's free layer which is located nearby. In this way the MTJ can be optimized for maximum dr/r while the reference stack can be optimized for optimum stability, since there is no half select problem. A process for manufacturing the memory element is also described.

摘要翻译： 存储元件使用传统的MTJ进行读取，另外一个单独的磁性参考堆栈在信息被写入时被短暂加热。 然后将该信息静磁施加在位于附近的MTJ自由层上。 以这种方式，MTJ可以针对最大dr / r进行优化，而参考堆可以优化以获得最佳稳定性，因为没有半选择问题。 还描述了用于制造存储元件的工艺。

公开(公告)号：US07466583B2

公开(公告)日：2008-12-16

申请号：US11331998

申请日：2006-01-13

申请人： Tai Min ,  Po-Kang Wang

发明人： Tai Min ,  Po-Kang Wang

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246

CPC分类号： H01L27/228

摘要： An MRAM cell is formed in two separate portions. A first portion, that includes a pinned layer, a tunneling barrier layer and first free layer part, is used to read the value of a stored bit of information. A second portion includes a second free layer part on which information is written and stored. The second free layer part is formed with a high aspect ratio cross-section that renders it strongly magnetically anisotropic and enables it to couple to the relatively isotropic first free layer through a magnetostatic interaction. This interaction aligns the magnetization of the first free layer part in an opposite direction to the magnetization of the second free layer part. The magnetic orientation of the first free layer part relative to that of its adjacent pinned layer determines the resistance state of the first cell portion and this resistance state can be read by passing a current through the first cell portion. Thus, in effect, the first cell portion becomes a remote sensing device for the magnetization orientation of the second free layer part.

摘要翻译： MRAM单元分成两部分形成。 使用包括被钉扎层，隧道势垒层和第一自由层部分的第一部分来读取存储的信息位的值。 第二部分包括其上写入和存储信息的第二自由层部分。 第二自由层部分形成有高纵横比的横截面，其使得其具有强烈的磁性各向异性，并使其能够通过静磁相互作用耦合到相对各向同性的第一自由层。 这种相互作用使第一自由层部分的磁化方向与第二自由层部分的磁化方向相反。 第一自由层部分相对于其相邻被钉扎层的磁取向确定第一单元部分的电阻状态，并且可以通过使电流通过第一单元部分来读取该电阻状态。 因此，实际上，第一单元部分成为用于第二自由层部分的磁化取向的遥感装置。

公开(公告)号：US20080266943A1

公开(公告)日：2008-10-30

申请号：US11789324

申请日：2007-04-24

申请人： Hsu Kai Yang ,  Po-Kang Wang

发明人： Hsu Kai Yang ,  Po-Kang Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a pair of rows and are oriented orthogonally to the bit lines. Write lines are connected to the gate of the gating MOS transistor of each MRAM cell of the rows. The MRAM cells are written in a two step process with selected MRAM cells written to a first logic level (0) in a first step and selected MRAM cells written to a second logic level (1) in a second step. A second embodiment of the spin-torque MRAM array has the bit lines commonly connected together to receive the data and the source select lines commonly connected together to receive an inverse of the data for writing.

摘要翻译： 自旋扭矩MRAM阵列具有以行和列排列的MRAM单元。 位线连接到每列上的每个MRAM单元。 源选择线连接到一对行的每个MRAM单元并且与位线正交地定向。 写入线连接到行的每个MRAM单元的选通MOS晶体管的栅极。 MRAM单元以两步过程写入，在第一步骤中将所选MRAM单元写入第一逻辑电平（0），并在第二步骤中将所选择的MRAM单元写入第二逻辑电平（1）。 自旋扭矩MRAM阵列的第二实施例具有通常连接在一起的位线，以接收通常连接在一起的数据和源选择线，以接收用于写入的数据的倒数。

公开(公告)号：US07391594B2

公开(公告)日：2008-06-24

申请号：US11447174

申请日：2006-06-06

申请人： Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

发明人： Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

IPC分类号： G11B5/60

CPC分类号： H05K3/3442 ,  B24B37/00 ,  B24D18/00 ,  G11B5/4853 ,  H05K1/0215 ,  H05K2201/10727 ,  Y02P70/613

摘要： Apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

摘要翻译： 呈现用于将滑块电耦合到地面的装置。 在一个实施例中，接合焊盘设置在与用于读/写信号的接合焊盘分开的滑块体的一侧上。 该单独的接合焊盘在滑块体内电耦合到要耦合到地面的部件。 设置在悬架上的单独的导体（例如，迹线，柔性电路等）可以通过金球接合电耦合到单独的接合焊盘。 导体也耦合到硬盘驱动装置中的接地（例如，经由前置放大器）。 使用分离的接合焊盘和迹线可能会使得不需要使用导电粘合剂来将滑块经由其附接件电连接到滑块的舌部。

公开(公告)号：US07321507B2

公开(公告)日：2008-01-22

申请号：US11284299

申请日：2005-11-21

申请人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

发明人： Hsu Kai Yang ,  Po-Kang Wang ,  Xizeng Shi

IPC分类号： G11C7/00

CPC分类号： G11C7/14 ,  G11C11/16

摘要： An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

公开(公告)号：US20080001207A1

公开(公告)日：2008-01-03

申请号：US11476495

申请日：2006-06-28

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L29/788

CPC分类号： H01L43/12 ,  G11C11/15 ,  H01L27/222

摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

公开(公告)号：US20070012952A1

公开(公告)日：2007-01-18

申请号：US11182255

申请日：2005-07-15

申请人： Yimin Guo ,  Po-Kang Wang

发明人： Yimin Guo ,  Po-Kang Wang

IPC分类号： H01L43/00 ,  H01L21/00

CPC分类号： H01L27/222 ,  G11C11/1675 ,  G11C11/1695

摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

摘要翻译： 在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。 图案化附加屏蔽，以便每位片提供一个屏蔽。 在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

公开(公告)号：US07123506B2

公开(公告)日：2006-10-17

申请号：US10860902

申请日：2004-06-03

申请人： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

发明人： Xizeng Shi ,  Son Le ,  Po-Kang Wang ,  Tai Min

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.

摘要翻译： 公开了一种用于编程磁存储器的方法和系统。 该方法和系统还包括打开字线电流并打开位线电流。 字线电流用于产生至少一个硬轴字段。 位线电流用于产生至少一个易轴场。 在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。 另一方面，在位线电流关闭之后，字线电流被关断。

公开(公告)号：US20060227461A1

公开(公告)日：2006-10-12

申请号：US11447174

申请日：2006-06-06

申请人： Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

发明人： Yen Fu ,  Ellis Cha ,  Po-Kang Wang ,  Hong Tian ,  Manuel Hernandez ,  Yaw-Shing Tang ,  Ben Hu

IPC分类号： G11B5/60

CPC分类号： H05K3/3442 ,  B24B37/00 ,  B24D18/00 ,  G11B5/4853 ,  H05K1/0215 ,  H05K2201/10727 ,  Y02P70/613

摘要： Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

公开(公告)号：US20050276098A1

公开(公告)日：2005-12-15

申请号：US10865722

申请日：2004-06-09

申请人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

发明人： Hsu Yang ,  Xizeng Shi ,  Po-Kang Wang ,  Bruce Yang

IPC分类号： B01F15/02 ,  G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

摘要翻译： 公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。 磁存储单元包括磁存储装置和隔离装置。 隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。 磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。 一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。 在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。