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11.发明授权Automatic adaptive equalization method and system for high-speed serial transmission link 失效自动自适应均衡方法和系统，用于高速串行传输链路公开(公告)号：US07295618B2
公开(公告)日：2007-11-13
申请号：US10710064
申请日：2004-06-16
CPC分类号： H04L25/03057 , H04L25/03343
摘要： A data communication system includes a transmitter unit and a receiver unit. The transmission unit has a transmission characteristic that is adjustable in accordance with equalization information. The transmission unit is operable to transmit a predetermined signal and the receiver unit is operable to receive the predetermined signal. The receiver unit is further operable to generate the equalization information by examining the eye opening of the received signal, and to transmit the equalization information to the transmitter unit.
摘要翻译： 数据通信系统包括发射机单元和接收机单元。 发送单元具有根据均衡信息可调的传输特性。 发送单元可操作以发送预定信号，并且接收器单元可操作以接收预定信号。 接收机单元进一步可操作以通过检查接收到的信号的眼图来产生均衡信息，并将均衡信息发送到发射机单元。
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12.发明授权公开(公告)号：US06696759B2
公开(公告)日：2004-02-24
申请号：US10021123
申请日：2001-10-30
IPC分类号： H01L2348
CPC分类号： H01L21/31053 , H01L21/28525 , H01L21/3081 , H01L21/31144 , H01L21/3212 , H01L21/7684
摘要： A semiconductor structure includes a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate in a damascene process flow. The semiconductor structure includes a substrate having a dielectric layer followed by the diamond-like carbon layer on a surface thereof. The diamond-like carbon layer is used as a hard-mask for forming conductive metal features from grown substrate material that fills a plurality of openings in the substrate, therein forming a semiconductor island structure, The semiconductor structure has a planar surface at the diamond-like carbon layer and the grown substrate material, whereby the diamond-like carbon polish-stop layer allows for over-planarization of the semiconductor island structure to provide an improved planar surface having a sufficient decrease in topography.
摘要翻译： 半导体结构包括金刚石状碳层，作为用于在金属镶嵌工艺流程中将金属水平图案化成层间电介质基板的抛光止动件。 该半导体结构包括其表面上具有介电层，然后是类金刚石碳层的基板。 金刚石状碳层用作用于形成导电金属特征的硬掩模，用于形成填充衬底中的多个开口的生长的衬底材料，其中形成半导体岛结构。半导体结构在金刚石 - 类似碳层和生长的基底材料，由此金刚石状碳抛光 - 停止层允许半导体岛结构的过平坦化，以提供具有足够的形貌降低的改进的平面表面。
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公开(公告)号：US5915183A
公开(公告)日：1999-06-22
申请号：US105654
申请日：1998-06-26
IPC分类号： H01L21/28 , H01L21/321 , H01L21/336 , H01L21/768 , H01L29/417
CPC分类号： H01L29/66583 , H01L21/28123 , H01L21/3212 , H01L21/76895 , H01L29/41775 , H01L29/41783 , H01L29/665
摘要： A process for forming raised source/drain junctions using CMP (Chemical Mechanical Polishing) combined with a recess etch of blanket polysilicon. The raised source/drains are defined by gate conductors and by raised STI (Shallow Trench Isolation) which also reduces leakage current through the devices and improves the threshold voltage control. The process uses a salicide gate conductor, and uses conventional polysilicon deposition, CMP, and recess steps to form the raised source/drain junctions, such that it is readily implemented in commercially feasible manufacturing processes.
摘要翻译： 使用CMP（化学机械抛光）与毯式多晶硅的凹陷蚀刻结合形成凸起的源极/漏极结的工艺。 凸起的源极/漏极由栅极导体和凸起的STI（浅沟槽隔离）限定，这也减少了通过器件的泄漏电流并改善了阈值电压控制。 该方法使用硅化物栅极导体，并且使用常规的多晶硅沉积，CMP和凹陷步骤来形成升高的源极/漏极结，使得其在商业上可行的制造工艺中容易地实现。
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14.发明授权Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow 失效金刚石作为抛光停止层，用于镶嵌工艺流程中的化学 - 机械平面化公开(公告)号：US06348395B1
公开(公告)日：2002-02-19
申请号：US09589818
申请日：2000-06-07
IPC分类号： H01L2176
CPC分类号： H01L21/31053 , H01L21/28525 , H01L21/3081 , H01L21/31144 , H01L21/3212 , H01L21/7684
摘要： A method of using diamond or a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate using a damascene process flow. The diamond or diamond-like carbon layer is deposited onto the surface of the substrate before patterning the metal level. A protective layer is then deposited over the diamond or diamond-like carbon polish-stop layer, wherein such protective layer may act as an additional polish-stop layer. Together, the diamond or diamond-like carbon polish-stop layer and the protective layer are used as a hard-mask for patterning the trenches that will become the metal features, wherein such protective layer protects the diamond or diamond-like carbon polish-stop layer during the patterning process. After deposition of a conductive metal layer, the dielectric substrate is polished to remove excess conductive material, as well as topography. In the polishing process, the diamond or diamond-like carbon polish-stop layer and any remaining protective layer are used as polish-stop layers. The diamond or diamond-like carbon polish-stop layer allows for an improved planar surface, thereby resulting in a sufficient decrease in topography at the surface of the inter-level dielectric.
摘要翻译： 使用金刚石或类金刚石碳层作为抛光停止件的方法，其使用镶嵌工艺流程将金属层图案化成层间电介质基板。 在图案化金属层之前，将金刚石或类金刚石碳层沉积在基板的表面上。 然后将保护层沉积在金刚石或类金刚石碳抛光层上，其中这种保护层可以用作另外的抛光停止层。 一起使用金刚石或类金刚石碳抛光层和保护层作为用于图案化将成为金属特征的沟槽的硬掩模，其中这种保护层保护金刚石或类金刚石碳抛光 在图案化过程中。 在沉积导电金属层之后，电介质基底被抛光以除去过量的导电材料以及形貌。 在抛光过程中，将金刚石或类金刚石碳抛光层和任何剩余的保护层用作抛光 - 停止层。 金刚石或类金刚石碳抛光层允许改进的平面表面，从而导致层间电介质表面的形貌的充分降低。
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15.发明授权Method of eliminating a critical mask using a blockout mask and a resulting semiconductor structure 失效使用阻挡掩模和所得半导体结构消除临界掩模的方法公开(公告)号：US06232222B1
公开(公告)日：2001-05-15
申请号：US09395418
申请日：1999-09-14
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/31144 , H01L27/10873 , H01L27/10894
摘要： A method of forming a semiconductor structure may include forming a semiconductor substrate having an array region and a support region, forming a semiconductor substrate and a gate stack over the support region of the substrate and applying a critical mask over the support region and the array region. The critical mask may have a first opening at an area corresponding to the array region and a second opening at an area corresponding to the support region. Contact holes may be formed in a glass layer at areas corresponding to the first and second opening. After removing the critical mask, a first blockout mask may be applied over the array region and a first conductive type dopant may be added to exposed polysilicon corresponding to openings of the blockout mask or gate contacts may be formed.
摘要翻译： 形成半导体结构的方法可以包括形成具有阵列区域和支撑区域的半导体衬底，在衬底的支撑区域上形成半导体衬底和栅叠层，并在衬底区域和阵列区域上施加临界掩模 。 临界掩模可以在对应于阵列区域的区域处具有第一开口，并且在对应于支撑区域的区域处具有第二开口。 可以在对应于第一和第二开口的区域的玻璃层中形成接触孔。 在去除临界掩模之后，可以在阵列区域上施加第一堵塞掩模，并且可以形成第一导电型掺杂剂，以对应于封闭掩模的开口或栅极触点形成对应于暴露的多晶硅。
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16.发明授权
公开(公告)号：US6129610A
公开(公告)日：2000-10-10
申请号：US134718
申请日：1998-08-14
申请人： Jeremy K. Stephens
发明人： Jeremy K. Stephens
摘要： A chemical-mechanical planarization (CMP) process is provided whereby cyclical pressure means varies the force against the wafer and polishing pad during the planarizing operation with the planarizing pad specially defined to have a relaxation time which is correlated with the force cycle so that the planarizing is enhanced. The relaxation time of the pad is greater than the downward an/or upward force cycle time on the wafer or pad and provides a planarizing process wherein the height of the pad during planarization is intermediate between a decompressed pad position and a compressed pad position typically encountered in a conventional CMP process.
摘要翻译： 提供化学机械平面化（CMP）工艺，其中循环压力装置在平坦化操作期间改变对晶片和抛光垫的力，其中平面化垫特别定义为具有与力循环相关的松弛时间，使得平面化 增强了。 焊盘的松弛时间大于晶片或焊盘上的向下或向上的力循环时间，并且提供平坦化处理，其中在平坦化期间焊盘的高度位于通常遇到的压缩焊盘位置和压缩焊盘位置之间 在常规CMP工艺中。
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17.发明授权Apparatus and method for controlling polishing of integrated circuit substrates 有权用于控制集成电路基板的抛光的装置和方法
公开(公告)号：US6102776A
公开(公告)日：2000-08-15
申请号：US225597
申请日：1999-01-06
申请人： Karl E. Boggs , Kenneth M. Davis , William F. Landers , Robert M. Merkling, Jr. , Michael L. Passow , Jeremy K. Stephens
发明人： Karl E. Boggs , Kenneth M. Davis , William F. Landers , Robert M. Merkling, Jr. , Michael L. Passow , Jeremy K. Stephens
IPC分类号： B24B37/013 , B24B49/04 , B24B49/10 , B24B49/00 , B24B51/00
CPC分类号： B24B37/013 , B24B49/04 , B24B49/10
摘要： A system for polishing a surface. The surface is positioned in contact with a rotating table having a polishing slurry or compound applied to a table surface. The pattern formed in the polishing compound as the table is rotated is monitored, and when the pattern dimensions reach a predetermined size, indicating a polished end point, the polisher ends polishing.
摘要翻译： 用于抛光表面的系统。 表面定位成与具有施加到台面的抛光浆料或化合物的旋转台接触。 监视在作为工作台的抛光组合物中形成的图案旋转，并且当图案尺寸达到预定尺寸时，指示抛光的终点，抛光机结束抛光。
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公开(公告)号：US5972787A
公开(公告)日：1999-10-26
申请号：US135866
申请日：1998-08-18
申请人： Karl E. Boggs , Chenting Lin , Joachim F. Nuetzel , Robert Ploessl , Maria Ronay , Florian Schnabel , Jeremy K. Stephens
发明人： Karl E. Boggs , Chenting Lin , Joachim F. Nuetzel , Robert Ploessl , Maria Ronay , Florian Schnabel , Jeremy K. Stephens
IPC分类号： H01L21/304 , B24B37/013 , B24B49/12 , H01L21/306 , H01L21/3105 , H01L21/66 , H01L23/544 , H01L21/4763 , H01L21/302 , H01L21/31
CPC分类号： B24B49/12 , B24B37/013 , H01L21/31053 , H01L22/20 , H01L22/34 , H01L2924/0002
摘要： The method of polishing metal layers on wafers comprises the steps of: providing indicator areas on said wafer, said indicator areas having combinations of line widths and pattern factors violating existing ground rules of metal lines thereby said indicator areas being dished out during said polishing using a chemical-mechanical polisher to polish the metal layers to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas, and adjusting the operation of the chemical-mechanical polisher in response to the inspection of the indicator areas. The indicator areas may include macroblocks comprised of a multitude of individual blocks. The wafer may be inspected by optically identifying the polishing state of to blocks in the macroblock. Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.
摘要翻译： 在晶片上抛光金属层的方法包括以下步骤：在所述晶片上提供指示器区域，所述指示器区域具有违反金属线的现有基准规则的线宽度和图案因素的组合，从而在所述抛光期间抛光所述指示器区域， 化学机械抛光机抛光金属层以从中去除材料，检查晶片上的指示器区域以确定从所述区域移除的材料的量，以及响应于指示器区域的检查来调整化学机械抛光机的操作 。 指示器区域可以包括由多个单独块组成的宏块。 可以通过光学地识别宏块中的块的抛光状态来检查晶片。 此外，该方法可以自动化用于批量生产。 可以形成到抛光机的反馈回路，其中来自抛光晶片上的宏块的光学检查的数据可以被立即反馈到抛光机，以便调整工艺参数。
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