公开(公告)号：US6162689A

公开(公告)日：2000-12-19

申请号：US187231

申请日：1998-11-06

申请人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

发明人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

IPC分类号： H01L21/266 ,  H01L21/285 ,  H01L21/336 ,  H01L29/417

CPC分类号： H01L29/66598 ,  H01L21/266 ,  H01L21/28518 ,  H01L29/41775 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

摘要： High integrity ultra-shallow source/drain junctions are formed employing cobalt silicide contacts. Emdodiments include forming field oxide regions, gates, spacers, and lightly doped implants, and then depositing a layer of oxide on a substrate. The oxide layer is masked to protect portions of the oxide layer located near the gate, where it is desired to have a shallow junction, then etched to expose portions of the intended source/drain regions where the silicided contacts are to be formed. A high-dosage source/drain implant is thereafter carried out to form deep source/drain junctions with the substrate where the oxide layer has been etched away, and to form shallower junctions near the gates, where the implant must travel through the oxide layer before reaching the substrate. A layer of cobalt is thereafter deposited and silicidation is performed to form metal silicide contacts over only the deep source/drain junctions, while the cobalt on the oxide layer (i.e., above the shallower junctions) does not react to form cobalt silicide, and is thereafter removed. The present invention provides ultra-shallow source-drain junctions near the gates for improved electrical characteristics, and deeper junctions away from the gates, with cobalt silicide contacts above only the deeper junction portions to avoid junction leakage, thereby facilitating reliable device scaling.

摘要翻译： 使用硅化钴接触形成高完整性超浅源极/漏极结。 实例包括形成场氧化物区域，栅极，间隔物和轻掺杂的植入物，然后在衬底上沉积氧化物层。 掩模氧化层以保护位于栅极附近的氧化物层的部分，期望具有浅结，然后蚀刻以暴露要形成硅化物触点的预期源/漏区的部分。 此后，进行高剂量源/漏注入，以与氧化物层被蚀刻掉的衬底形成深的源极/漏极结，并且在栅极附近形成较浅的结，其中植入物必须在 到达基板。 此后沉积一层钴，并且仅在深源极/漏极接合处进行硅化以形成金属硅化物接触，而氧化物层上的钴（即，较浅的接合点上方）不反应形成硅化钴，并且是 此后取出。 本发明提供了栅极附近的超浅源极 - 漏极结，用于改善电气特性，以及远离栅极的较深的结，钴硅化物接触仅在较深的接合部分上方，以避免结漏电，从而便于可靠的器件缩放。

公开(公告)号：US6096599A

公开(公告)日：2000-08-01

申请号：US187521

申请日：1998-11-06

申请人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

发明人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

IPC分类号： H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8242

CPC分类号： H01L29/66575 ,  H01L21/2257 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/665 ,  Y10S438/923

摘要： High integrity shallow source/drain junctions are formed employing cobalt silicide contacts. Embodiments include depositing a layer of cobalt on a substrate above intended source/drain regions, depositing a cap layer of titanium or titanium nitride on the cobalt, depositing a doped film on the cap layer, and performing silicidation, as by rapid thermal annealing, to form a low-resistivity cobalt silicide and to diffuse impurities from the doped film through the cobalt silicide into the substrate to form a junction extending into the substrate a constant depth below the cobalt silicide interface. The formation of source/drain junctions self-aligned to the cobalt silicide/silicon interface prevents junction leakage while allowing the formation of cobalt silicide contacts at optimum thickness, thereby facilitating reliable device scaling.

摘要翻译： 使用硅化钴接触形成高度完整的浅源极/漏极结。 实施例包括在目标源极/漏极区域上的衬底上沉积钴层，在钴上沉积钛或氮化钛的覆盖层，在覆盖层上沉积掺杂的膜，并通过快速热退火进行硅化， 形成低电阻率的硅化钴，并且通过硅化钴将掺杂的膜中的杂质扩散到衬底中，以形成在硅化钴界面下面延伸到衬底中的恒定深度的结。 与硅化钴/硅界面自对准的源极/漏极结的形成防止结漏，同时允许在最佳厚度下形成硅化钴触点，从而便于可靠的器件缩放。

公开(公告)号：US06873051B1

公开(公告)日：2005-03-29

申请号：US10157807

申请日：2002-05-31

申请人： Eric Paton ,  Paul Raymond Besser ,  Simon S. Chan ,  Fred Hause

发明人： Eric Paton ,  Paul Raymond Besser ,  Simon S. Chan ,  Fred Hause

IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/28518 ,  H01L21/26506 ,  H01L21/28052 ,  H01L29/665 ,  H01L29/6659

摘要： Nickel silicide formation with significantly reduced interface roughness is achieved by forming a diffusion modulating layer between the underlying silicon and nickel silicide layers. Embodiments include ion implanting nitrogen into the substrate and gate electrode, depositing a thin layer of titanium or tantalum, depositing a layer of nickel, and then heating to form a diffusion modulating layer containing nitrogen at the interface between the underlying silicon and nickel silicide layers.

摘要翻译： 通过在下面的硅和硅化镍层之间形成扩散转换层来实现具有显着降低的界面粗糙度的硅化镍形成。 实施例包括将氮离子注入到衬底和栅电极中，沉积钛或钽的薄层，沉积镍层，然后加热以形成在下硅和硅化镍层之间的界面处含有氮的扩散调制层。

公开(公告)号：US06773978B1

公开(公告)日：2004-08-10

申请号：US10229690

申请日：2002-08-28

申请人： Paul Raymond Besser ,  Eric Paton ,  James Pan

发明人： Paul Raymond Besser ,  Eric Paton ,  James Pan

IPC分类号： H01L218242

CPC分类号： H01L21/28052 ,  H01L21/28097 ,  H01L29/7833

摘要： Methods are disclosed for manufacturing semiconductor devices with silicide metal gates, wherein a single-step anneal is used to react a metal such as cobalt or nickel with substantially all of a polysilicon gate structure while source/drain regions are covered. A second phase conductive metal silicide is formed consuming substantially all of the polysilicon and providing a substantially uniform work function at the silicide/gate oxide interface.

摘要翻译： 公开了用于制造具有硅化物金属栅极的半导体器件的方法，其中使用单步退火来使诸如钴或镍的金属与基本上所有的多晶硅栅极结构反应，同时覆盖源极/漏极区域。 形成第二相导电金属硅化物，其基本上消耗所有多晶硅，并在硅化物/栅极氧化物界面处提供基本均匀的功函数。

公开(公告)号：US06238986B1

公开(公告)日：2001-05-29

申请号：US09187427

申请日：1998-11-06

申请人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

发明人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

IPC分类号： H01L2128

CPC分类号： H01L29/66575 ,  H01L21/2257 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/665

摘要： High integrity shallow source/drain junctions are formed employing cobalt silicide contacts. A layer of cobalt and a cap layer of titanium or titanium nitride are deposited on a substrate above intended source/drain regions, followed by silicidation. Embodiments include low-temperature rapid thermal annealing to form a high-resistivity phase cobalt silicide, removing the cap layer, depositing a doped film on the first phase cobalt silicide, and heating, as by high-temperature rapid thermal annealing, to form a low-resistance cobalt silicide during which impurities from the doped film diffuse through the cobalt silicide into the substrate to form source/drain regions having junctions extending into the substrate a constant depth below the cobalt silicide/silicon substrate interface. In another embodiment, impurities are diffused from the doped film to form source/drain regions and self-aligned junctions following formation of the low-resistance phase cobalt silicide. The formation of source/drain junctions self-aligned to the cobalt silicide/silicon substrate interface prevents junction leakage while allowing the formation of cobalt silicide contacts at optimum thickness to avoid parasitic series resistances, thereby facilitating reliable device scaling.

摘要翻译： 使用硅化钴接触形成高度完整的浅源极/漏极结。 一层钴和钛或氮化钛的覆盖层沉积在预期的源极/漏极区域上的衬底上，随后进行硅化。 实施例包括低温快速热退火以形成高电阻率相硅化钴，去除覆盖层，在第一相钴硅化物上沉积掺杂膜，并且通过高温快速热退火加热以形成低 电阻的硅化钴，其中来自掺杂膜的杂质通过硅化钴扩散到衬底中以形成具有在硅化钴/硅衬底界面下方延伸到衬底中的连续恒定深度的接合的源/漏区。 在另一个实施例中，在形成低电阻相钴硅化物之后，杂质从掺杂膜扩散以形成源/漏区和自对准结。 与硅化钴/硅衬底界面自对准的源极/漏极结的形成可防止结合泄漏，同时允许以最佳厚度形成硅化钴触点，以避免寄生串联电阻，从而便于可靠的器件缩放。

公开(公告)号：US06169005A

公开(公告)日：2001-01-02

申请号：US09318824

申请日：1999-05-26

申请人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

发明人： Nick Kepler ,  Karsten Wieczorek ,  Larry Wang ,  Paul Raymond Besser

IPC分类号： H01L21386

CPC分类号： H01L21/28518 ,  H01L21/2257 ,  H01L21/76895 ,  H01L29/665

摘要： High integrity ultra-shallow source/drain junctions are formed employing cobalt silicide contacts. These are formed by depositing a layer of cobalt on a substrate above intended source/drain regions, and depositing a doped amorphous silicon film on the cobalt. Silicidation, as by rapid thermal annealing, is performed to form a low-resistance cobalt suicide while consuming the amorphous silicon film and diffusing impurities from the doped amorphous silicon film through the cobalt silicide into the substrate. The diffusion of the impurities forms shallow junctions extending into the substrate a substantially constant depth below the cobalt silicide/silicon substrate interface. The consumption of the amorphous silicon film during silicidation, which results in less consumption of substrate silicon, and formation of source/drain junctions self-aligned to the cobalt silicide/silicon substrate interface, enables the formation of ultra-shallow source/drain junctions without junction leakage while allowing the formation of cobalt silicide contacts at optimum thickness, thereby facilitating reliable device scaling.

摘要翻译： 使用硅化钴接触形成高完整性超浅源极/漏极结。 这些是通过在目标源极/漏极区域上的衬底上沉积钴层而在钴上沉积掺杂的非晶硅膜形成的。 通过快速热退火进行硅化，以形成低电阻的硅化钴，同时消耗非晶硅膜并将杂质从掺杂的非晶硅膜通过硅化钴扩散到衬底中。 杂质的扩散形成延伸到衬底中的浅结，在硅化钴/硅衬底界面下方基本上恒定的深度。 在硅化期间，非晶硅膜的消耗导致较少的衬底硅消耗，以及与硅化钴/硅衬底界面自对准的源极/漏极结的形成使得能够形成超浅源极/漏极结而不形成 结点泄漏，同时允许以最佳厚度形成钴硅化物触点，从而便于可靠的器件缩放。