公开(公告)号：US20080078955A1

公开(公告)日：2008-04-03

申请号：US11540449

申请日：2006-09-29

Applicant: Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

Inventor： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC: H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/3045 ,  H01J2237/043 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/30455 ,  H01J2237/30472

Abstract: An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

Abstract translation: 在离子注入期间，在检测到光束不稳定性时，离子束被快速关闭。 离子束由非电弧放电型离子源（例如电子枪离子源或RF离子源）产生或提供。 离子束从起始位置朝向终止位置跨工件扫描。 在扫描期间，监视一个或多个光束特性，例如光束电流，光束通量，形状等。 当一个或多个光束特性偏离可接受的值或水平时，检测到不稳定性。 在检测到的不稳定性下，离子束快速关闭。

公开(公告)号：US08803110B2

公开(公告)日：2014-08-12

申请号：US11541087

申请日：2006-09-29

Applicant: Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

Inventor： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/32

CPC classification number: H01J37/3233 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32935 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01L21/265

Abstract: Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.

Abstract translation: 通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。 离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。 确定射束电流调节量。 然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。 提供具有调制束电流的束电流。

公开(公告)号：US20110171817A1

公开(公告)日：2011-07-14

申请号：US12685903

申请日：2010-01-12

Applicant: W. Davis Lee ,  Daniel R. Tieger

Inventor： W. Davis Lee ,  Daniel R. Tieger

IPC: H01L21/265

CPC classification number: H01L21/26506 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01L21/2658

Abstract: Methods for implanting an aromatic carbon molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing aromatic carbon molecule in an ion source to create a plasma and produce aromatic carbon molecules and its ionized lower mass byproducts. The ionized aromatic carbon molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized aromatic carbon molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract translation: 将芳族碳分子或选择的离子化的下质量副产物植入工件中的方法通常包括在离子源中蒸发和离子化芳族碳分子以产生等离子体并产生芳族碳分子及其电离的较低质量副产物。 离子化的芳族碳分子和等离子体内的较低质量的副产物然后被提取以形成离子束。 使用质量分析器磁体对离子束进行质量分析，以允许选定的电离芳族碳分子或选定的离子化的下质量副产物通过其并植入工件中。

公开(公告)号：US20070137671A1

公开(公告)日：2007-06-21

申请号：US11540469

申请日：2006-09-29

Applicant: William F. DiVergilio ,  Daniel R. Tieger ,  William P. Reynolds ,  Christopher W. Hodgdon ,  Sean Joyce

Inventor： William F. DiVergilio ,  Daniel R. Tieger ,  William P. Reynolds ,  Christopher W. Hodgdon ,  Sean Joyce

IPC: B08B3/12 ,  B08B6/00 ,  H01J7/24 ,  C23C16/00

CPC classification number: H01J37/3171 ,  B08B7/0035 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A deposit cleaning system for removing deposits from interior surfaces of ion sources and/or electrodes includes a fluorine source, a throttle mechanism, and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism mitigates loss of fluorine through a source aperture of the ion source by at least partially covering the source aperture. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the positioning of the throttle mechanism.

Abstract translation: 用于从离子源和/或电极的内表面去除沉积物的沉积物清洁系统包括氟源，节流机构和控制器。 氟源作为清洁材料向离子源供给氟。 节流机构通过至少部分地覆盖源孔径来减轻通过离子源的源孔径的氟的损失。 控制器控制从氟源到离子源的供应和流量，还控制节流机构的定位。