Apparatus and method for notifying communication network event in application server capable of supporting open API based on Web services
    12.
    发明申请
    Apparatus and method for notifying communication network event in application server capable of supporting open API based on Web services 审中-公开
    在通过Web服务支持开放API的应用服务器中通知通信网络事件的装置和方法

    公开(公告)号:US20070165615A1

    公开(公告)日:2007-07-19

    申请号:US11634613

    申请日:2006-12-06

    申请人: Young Shin Sang Kim

    发明人: Young Shin Sang Kim

    IPC分类号: H04L12/66

    摘要: An apparatus and method for notifying a communication network event in an application server capable of supporting open APIs based on Web services are disclosed. The event notification apparatus configures an event table using a service provisioning manager to perform event notification, and registers static events, allows a service application to request the beginning of dynamic event notification from a gateway. If a corresponding static or dynamic event occurs in the communication network, and the gateway calls an event notification API processor, the event notification API processor transmits the event to the service application by referring to the event table, such that it can notify the service application of the static or dynamic event under the open API environment based on Web services.

    摘要翻译: 公开了一种用于在能够支持基于Web服务的开放API的应用服务器中通知通信网络事件的装置和方法。 事件通知装置使用服务提供管理器配置事件表以执行事件通知,并且注册静态事件,允许服务应用程序从网关请求开始动态事件通知。 如果在通信网络中发生对应的静态或动态事件,并且网关调用事件通知API处理器,则事件通知API处理器通过参考事件表将事件发送到服务应用,使得它可以通知服务应用 的基于Web服务的开放API环境下的静态或动态事件。

    Image sensor and method for manufacturing the same
    13.
    发明申请
    Image sensor and method for manufacturing the same 失效
    图像传感器及其制造方法

    公开(公告)号:US20070145505A1

    公开(公告)日:2007-06-28

    申请号:US11646701

    申请日:2006-12-27

    申请人: Sang Kim Jae Han

    发明人: Sang Kim Jae Han

    IPC分类号: H01L31/0232

    摘要: Disclosed are an image sensor and a method for manufacturing the same, capable of increasing a light absorbing coefficient by forming a rough surface on a photodiode. The image sensor includes a semiconductor substrate with a plurality of photodiodes thereon having rough upper surfaces, a dielectric layer on the semiconductor substrate, a color filter layer on the dielectric layer, a planarization layer on an entire surface of the semiconductor substrate including the color filter layer, and a plurality of micro-lenses formed on the planarization layer to correspond to the color filter layer.

    摘要翻译: 公开了一种能够通过在光电二极管上形成粗糙表面来增加吸光系数的图像传感器及其制造方法。 图像传感器包括其上具有多个光电二极管的半导体衬底,具有粗糙的上表面,半导体衬底上的电介质层,介电层上的滤色器层,在包括滤色器的半导体衬底的整个表面上的平坦化层 以及形成在平坦化层上以对应于滤色器层的多个微透镜。

    Method of Manufacturing Semiconductor Device
    14.
    发明申请
    Method of Manufacturing Semiconductor Device 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20070141842A1

    公开(公告)日:2007-06-21

    申请号:US11427559

    申请日:2006-06-29

    IPC分类号: H01L21/302 H01L21/461

    CPC分类号: H01L21/76829

    摘要: Disclosed herein is a method of manufacturing a semiconductor device. The method includes forming an etch-stop film on a semiconductor substrate in which a predetermined structure is formed, and then forming an interlayer insulating film. The method also includes etching a predetermined region of the interlayer insulating film, and then stopping the etch process at the etch-stop film, to form a damascene pattern. The method employs an etch-stop film made of a material having a low dielectric constant. Accordingly, an increase in the capacitance due to an etch-stop film formed of the existing material having a high dielectric constant can be prevented. It is therefore possible to prevent a reduction of RC delay and also to accelerate the operating speed of devices.

    摘要翻译: 本文公开了一种制造半导体器件的方法。 该方法包括在其中形成预定结构的半导体衬底上形成蚀刻停止膜,然后形成层间绝缘膜。 该方法还包括蚀刻层间绝缘膜的预定区域,然后停止蚀刻停止膜处的蚀刻工艺以形成镶嵌图案。 该方法采用由具有低介电常数的材料制成的蚀刻停止膜。 因此,可以防止由具有高介电常数的现有材料形成的蚀刻停止膜引起的电容的增加。 因此可以防止RC延迟的降低并且还可以加速设备的操作速度。

    Method for designing insulation thickness of 22.9kV class High-temperature superconducting cable using conversion coefficient
    15.
    发明申请
    Method for designing insulation thickness of 22.9kV class High-temperature superconducting cable using conversion coefficient 审中-公开
    22.9kV级绝缘厚度的设计方法使用转换系数的高温超导电缆

    公开(公告)号:US20070136033A1

    公开(公告)日:2007-06-14

    申请号:US11338352

    申请日:2006-01-24

    IPC分类号: G06F17/10

    摘要: Disclosed herein is a method for designing an insulation thickness of a 22.9 kV high-temperature superconducting cable wherein conversion coefficients for use in the transmission of electric power. In the insulation thickness designing method, differently from a conventional design method wherein only AC insulation breakdown electric-field, impulse insulation breakdown electric-field, and partial discharge initiation electric-field characteristics of an insulation sheet sample are applied to cable insulation thickness design equations, conversion coefficients, which are obtained in consideration of the effects of shape, area, and thickness along with the respective electric-field values, to the cable insulation thickness design equations, thereby achieving an increase in the accuracy of the insulation thickness of the high-temperature superconducting cable to be manufactured.

    摘要翻译: 本文公开了一种用于设计用于电力传输的转换系数的22.9kV高温超导电缆的绝缘厚度的方法。 在绝缘厚度设计方法中,与绝缘层样品的绝缘击穿电场,脉冲绝缘击穿电场和局部放电起始电场特性的传统设计方法不同的是,应用于电缆绝缘厚度设计方程式 ,考虑到形状,面积和厚度以及各自的电场值对电缆绝缘厚度设计方程的影响而获得的转换系数,从而实现了高的绝缘厚度的精度的提高 要制造的超导电缆。

    Passivation film of semiconductor device
    16.
    发明申请
    Passivation film of semiconductor device 有权
    半导体器件钝化膜

    公开(公告)号:US20070132042A1

    公开(公告)日:2007-06-14

    申请号:US11702299

    申请日:2007-02-05

    申请人: Sang Kim

    发明人: Sang Kim

    IPC分类号: H01L29/94 H01L29/76 H01L31/00

    摘要: Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.

    摘要翻译: 公开了半导体器件的制造方法和半导体器件的结构。 形成半导体器件的钝化膜的方法包括以下步骤:在半导体衬底上形成金属线,在金属线上形成作为第一钝化膜的缓冲氧化膜,其中缓冲氧化物膜可以减轻等离子体的损伤,形成 在所述缓冲氧化膜上的第二钝化膜的高密度等离子体膜,以及在所述第二钝化膜上形成第三钝化膜。 根据本发明,可以显着地减少选择源极线和公共源极线之间的漏电流。

    INTEGRATED THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    18.
    发明申请
    INTEGRATED THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 有权
    集成薄膜太阳能电池及其制造方法

    公开(公告)号:US20070131271A1

    公开(公告)日:2007-06-14

    申请号:US11610254

    申请日:2006-12-13

    IPC分类号: H02N6/00

    摘要: Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material.

    摘要翻译: 提供一种集成薄膜太阳能电池及其制造方法。 该方法包括在衬底上形成和图案化彼此相隔预定距离的导电材料; 在所得基板上形成太阳能电池(半导体)层; 将第一透明导电材料倾斜地沉积在太阳能电池层上; 使用第一透明导电材料作为掩模蚀刻太阳能电池层; 并在所得基板上倾斜沉积第二透明导电材料,并将导电材料与第一透明导电材料电连接。

    Active matrix OLED driving circuit using current feedback
    20.
    发明申请
    Active matrix OLED driving circuit using current feedback 失效
    有源矩阵OLED驱动电路采用电流反馈

    公开(公告)号:US20070075939A1

    公开(公告)日:2007-04-05

    申请号:US11543588

    申请日:2006-10-04

    IPC分类号: G09G3/30

    摘要: An active matrix organic light emitting diode AMOLED driving circuit using current feedback that ensures the uniformity of brightness in pixels of a flat panel display and shortens the time required to input accurate current to respective pixels in the driving circuit. The prevent invention provides an AMOLED driving circuit using current feedback, comprising: a current digital-to-analog converter outputting a current corresponding to input digital data; a first differential amplifier connected to the current digital-to-analog converter and controlling the input data current and a driving current of a driving transistor of a pixel circuit to be identical to each other; a current mirror mirroring driving current of an organic light emitting diode of the pixel circuit to an input side of the first differential amplifier; and a second differential amplifier coupled to the current mirror and controlling charge and discharge speeds of parasitic capacitance of the pixel circuit.

    摘要翻译: 使用电流反馈的有源矩阵有机发光二极管AMOLED驱动电路,其确保平板显示器的像素中亮度的均匀性,并缩短将精确电流输入到驱动电路中的各个像素所需的时间。 本发明提供一种使用电流反馈的AMOLED驱动电路,包括:输出与输入数字数据相对应的电流的当前数模转换器; 连接到当前数模转换器并控制像素电路的驱动晶体管的输入数据电流和驱动电流彼此相同的第一差分放大器; 将像素电路的有机发光二极管的驱动电流的电流镜反射到第一差分放大器的输入侧; 以及耦合到电流镜并且控制像素电路的寄生电容的充电和放电速度的第二差分放大器。