公开(公告)号：US20050242373A1

公开(公告)日：2005-11-03

申请号：US11175094

申请日：2005-07-05

申请人： David Ahlgren ,  Gregory Freeman ,  Marwan Khater ,  Richard Volant

发明人： David Ahlgren ,  Gregory Freeman ,  Marwan Khater ,  Richard Volant

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L29/737 ,  H01L31/072

CPC分类号： H01L29/66287 ,  H01L21/8249 ,  H01L29/0804 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7378

摘要： The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.

摘要翻译： 本发明提供一种具有凸起的非本征基极硅化物和自对准的发射极接触边界的双极晶体管。 与不包括自对准硅化物和自对准发射极接触边界的双极晶体管相比，本发明的双极晶体管表现出减小的寄生效应。 本发明还涉及制造本发明的双极晶体管结构的方法。 在本发明的方法中，块状发射极多晶硅区域代替常规的T形发射极多晶硅。

公开(公告)号：US06940149B1

公开(公告)日：2005-09-06

申请号：US10708563

申请日：2004-03-11

申请人： Rama Divakaruni ,  Gregory Freeman ,  Marwan Khater ,  William Tonti

发明人： Rama Divakaruni ,  Gregory Freeman ,  Marwan Khater ,  William Tonti

IPC分类号： H01L21/331 ,  H01L27/06 ,  H01L27/082 ,  H01L29/06 ,  H01L29/737 ,  H01L31/072

CPC分类号： H01L29/66242 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/7378

摘要： Structure and a method are provided for making a bipolar transistor, the bipolar transistor including a collector, an intrinsic base overlying the collector, an emitter overlying the intrinsic base, and an extrinsic base spaced from the emitter by a gap, the gap including at least one of an air gap and a vacuum void.

摘要翻译： 提供了用于制造双极晶体管的结构和方法，双极晶体管包括集电极，覆盖集电极的本征基极，覆盖本征基极的发射极以及与发射极间隔开的非本征基极，该间隙至少包括 一个气隙和一个真空空隙。

公开(公告)号：US20050121748A1

公开(公告)日：2005-06-09

申请号：US10727945

申请日：2003-12-04

申请人： David Ahlgren ,  Gregory Freeman ,  Marwan Khater ,  Richard Volant

发明人： David Ahlgren ,  Gregory Freeman ,  Marwan Khater ,  Richard Volant

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L29/737 ,  H01L27/082

CPC分类号： H01L29/66287 ,  H01L21/8249 ,  H01L29/0804 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7378

摘要： The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.

公开(公告)号：US20050082642A1

公开(公告)日：2005-04-21

申请号：US10978775

申请日：2004-11-01

申请人： Gregory Freeman ,  Marwan Khater ,  Francois Pagette ,  Andreas Stricker

发明人： Gregory Freeman ,  Marwan Khater ,  Francois Pagette ,  Andreas Stricker

IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/66287 ,  H01L29/0804 ,  H01L29/732

摘要： A double-polysilicon, self-aligned bipolar transistor has a collector region formed in a doped semiconductor substrate, an intrinsic counterdoped base formed on the surface of the substrate and a doped intrinsic emitter formed in the surface of the intrinsic base. An etch stop insulator layer overlies the intrinsic base layer above the collector. A base contact layer of a conductive material overlies the etch stop dielectric layer and the intrinsic base layer. A dielectric layer overlies the base contact layer. A wide window extends through the insulator layer and the base contact layer down to the insulator layer. An island or a peninsula is formed in the wide window leaving at least one narrowed window within the wide window, with sidewall spacers in either the wide window or the narrowed window. The narrowed windows are filled with doped polysilicon forming an extrinsic emitter with the intrinsic emitter formed below the extrinsic emitter in the surface of the intrinsic base.

摘要翻译： 双重多晶硅，自对准双极晶体管具有在掺杂半导体衬底中形成的集电极区域，形成在衬底表面上的本征反掺杂基底和形成在本征基底表面的掺杂本征发射极。 蚀刻停止绝缘体层覆盖在收集器上方的本征基极层。 导电材料的基极接触层覆盖在蚀刻停止介电层和本征基极层之间。 电介质层覆盖在基底接触层上。 宽窗口延伸穿过绝缘体层和基底接触层向下延伸到绝缘体层。 在宽窗口中形成岛或半岛，在宽窗口内留下至少一个变窄的窗口，在宽窗口或狭窄窗口中具有侧壁间隔物。 变窄的窗口填充有掺杂的多晶硅，其形成外部发射极，本征发射极在本征基极表面的外部发射极之下形成。

公开(公告)号：US20050269664A1

公开(公告)日：2005-12-08

申请号：US10709905

申请日：2004-06-04

申请人： David Ahlgren ,  Gregory Freeman ,  Francois Pagette ,  Christopher Schnabel ,  Anna Topol

发明人： David Ahlgren ,  Gregory Freeman ,  Francois Pagette ,  Christopher Schnabel ,  Anna Topol

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L29/80

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved fT, Fmax and drive current.

摘要翻译： 双极晶体管具有通过金属化直接接触基极 - 集电极结下方的集电极，以降低集电极电阻。 消除了常规的通孔和掩埋层以及它们的相关电阻。 晶体管非常隔离，几乎消除了良好的衬底电容和器件到器件的漏电流。 该结构提供了改进的电性能，包括改进的f T，F max和驱动电流。

公开(公告)号：US20050145990A1

公开(公告)日：2005-07-07

申请号：US11041845

申请日：2005-01-22

申请人： Gregory Freeman

发明人： Gregory Freeman

IPC分类号： H01L21/331 ,  H01L21/8228 ,  H01L29/10 ,  H01L29/737 ,  H01L29/739 ,  H01L21/8222 ,  H01L27/082 ,  H01L31/0328

CPC分类号： H01L29/66242 ,  H01L21/82285 ,  H01L29/1004 ,  H01L29/7378

摘要： Bipolar integrated circuits employing SiGe technology incorporate the provision of mask-selectable types of bipolar transistors. A high-performance/high variability type has a thin base in which the diffusion from the emitter intersects the base dopant diffusion within the “ramp” of Ge concentration near the base-collector junction and a lower performance/lower variability type has an additional epi layer in the base so that the emitter diffusion intersects the Ge ramp where the ramp has lower ramp rate.

摘要翻译： 采用SiGe技术的双极集成电路结合了提供掩模选择型双极晶体管。 高性能/高可变性类型具有薄的基极，其中来自发射极的扩散与基极集电极结附近的Ge浓度的“斜坡”内的基极掺杂剂扩散相交，并且较低的性能/较低变异性类型具有额外的外延 使得发射极扩散与Ge斜坡相交，其中斜坡具有较低的斜率。

公开(公告)号：US07709930B2

公开(公告)日：2010-05-04

申请号：US11568156

申请日：2004-04-22

申请人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Gregory Freeman ,  Steven Voldman ,  Stephen A. St. Onge

发明人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Gregory Freeman ,  Steven Voldman ,  Stephen A. St. Onge

IPC分类号： H01L29/66

CPC分类号： H01L29/66363 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/66242 ,  H01L29/7378 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/93

摘要： Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.

摘要翻译： 公开了一种形成半导体结构的方法，该半导体结构包括具有与下面的衬底不同的极性的不连续的非平面子集电极。 此外，该结构包括在副集电极上方的有源区（集电极），有源区上方的基极和基极上方的发射极。 不连续子集电极的不连续部分之间的距离调节了半导体结构的性能特性。 可调谐的性能特点包括击穿电压，单位电流增益截止频率，单位功率增益截止频率，传输频率，电流密度，电容范围，噪声注入，少数载流子注入以及触发和保持电压。

公开(公告)号：US20050079726A1

公开(公告)日：2005-04-14

申请号：US10969718

申请日：2004-10-20

申请人： Huajie Chen ,  Kathryn Schonenberg ,  Gregory Freeman ,  Andreas Stricker ,  Jae-Sung Rieh

发明人： Huajie Chen ,  Kathryn Schonenberg ,  Gregory Freeman ,  Andreas Stricker ,  Jae-Sung Rieh

IPC分类号： H01L21/321 ,  H01L21/331 ,  H01L29/732 ,  H01L29/737

CPC分类号： H01L29/66242 ,  H01L21/32105 ,  Y10S438/911

摘要： A self-aligned oxide mask is formed utilizing differential oxidation rates of different materials. The self-aligned oxide mask is formed on a CVD grown base NPN base layer which compromises single crystal Si (or Si/SiGe) at active area and polycrystal Si (or Si/SiGe) on the field. The self-aligned mask is fabricated by taking advantage of the fact that poly Si (or Si/SiGe) oxidizes faster than single crystal Si (or Si/SiGe). An oxide film is formed over both the poly Si (or Si/siGe) and the single crystal Si (or Si/siGe) by using an thermal oxidation process to form a thick oxidation layer over the poly Si (or Si/siGe) and a thin oxidation layer over the single crystal Si (or Si/siGe), followed by a controlled oxide etch to remove the thin oxidation layer over the single crystal Si (or Si/siGe) while leaving the self-aligned oxide mask layer over the poly Si (or Si/siGe). A raised extrinsic base is then formed following the self-aligned mask formation. This self-aligned oxide mask blocks B diffusion from the raised extrinsic base to the corner of collector.