公开(公告)号：US20050079726A1

公开(公告)日：2005-04-14

申请号：US10969718

申请日：2004-10-20

申请人： Huajie Chen ,  Kathryn Schonenberg ,  Gregory Freeman ,  Andreas Stricker ,  Jae-Sung Rieh

发明人： Huajie Chen ,  Kathryn Schonenberg ,  Gregory Freeman ,  Andreas Stricker ,  Jae-Sung Rieh

IPC分类号： H01L21/321 ,  H01L21/331 ,  H01L29/732 ,  H01L29/737

CPC分类号： H01L29/66242 ,  H01L21/32105 ,  Y10S438/911

摘要： A self-aligned oxide mask is formed utilizing differential oxidation rates of different materials. The self-aligned oxide mask is formed on a CVD grown base NPN base layer which compromises single crystal Si (or Si/SiGe) at active area and polycrystal Si (or Si/SiGe) on the field. The self-aligned mask is fabricated by taking advantage of the fact that poly Si (or Si/SiGe) oxidizes faster than single crystal Si (or Si/SiGe). An oxide film is formed over both the poly Si (or Si/siGe) and the single crystal Si (or Si/siGe) by using an thermal oxidation process to form a thick oxidation layer over the poly Si (or Si/siGe) and a thin oxidation layer over the single crystal Si (or Si/siGe), followed by a controlled oxide etch to remove the thin oxidation layer over the single crystal Si (or Si/siGe) while leaving the self-aligned oxide mask layer over the poly Si (or Si/siGe). A raised extrinsic base is then formed following the self-aligned mask formation. This self-aligned oxide mask blocks B diffusion from the raised extrinsic base to the corner of collector.

公开(公告)号：US06844225B2

公开(公告)日：2005-01-18

申请号：US10345469

申请日：2003-01-15

申请人： Huajie Chen ,  Kathryn T. Schonenberg ,  Gregory G. Freeman ,  Andreas D. Stricker ,  Jae-Sung Rieh

发明人： Huajie Chen ,  Kathryn T. Schonenberg ,  Gregory G. Freeman ,  Andreas D. Stricker ,  Jae-Sung Rieh

IPC分类号： H01L21/321 ,  H01L21/331 ,  H01L29/732 ,  H01L29/737 ,  H01L21/00

CPC分类号： H01L29/66242 ,  H01L21/32105 ,  Y10S438/911

摘要： A self-aligned oxide mask is formed utilizing differential oxidation rates of different materials. The self-aligned oxide mask is formed on a CVD grown base NPN base layer which compromises single crystal Si (or Si/SiGe) at active area and polycrystal Si (or Si/SiGe) on the field. The self-aligned mask is fabricated by taking advantage of the fact that poly Si (or Si/SiGe) oxidizes faster than single crystal Si (or Si/SiGe). An oxide film is formed over both the poly Si (or Si/siGe) and the single crystal Si (or Si/siGe) by using an thermal oxidation process to form a thick oxidation layer over the poly Si (or Si/siGe) and a thin oxidation layer over the single crystal Si (or Si/siGe), followed by a controlled oxide etch to remove the thin oxidation layer over the single crystal Si (or Si/siGe) while leaving the self-aligned oxide mask layer over the poly Si (or Si/siGe). A raised extrinsic base is then formed following the self-aligned mask formation. This self-aligned oxide mask blocks B diffusion from the raised extrinsic base to the corner of collector.

摘要翻译： 使用不同材料的不同氧化速率形成自对准氧化物掩模。 自对准氧化物掩模形成在CVD生长的基底NPN基层上，其牺牲了场上的活性区域上的单晶Si（或Si / SiGe）和多晶Si（或Si / SiGe）。 通过利用多晶硅（或Si / SiGe）比单晶Si（或Si / SiGe）更快地氧化的事实来制造自对准掩模。 通过使用热氧化工艺在多晶硅（或Si / siGe）和单晶Si（或Si / siGe）上形成氧化膜，以在多晶硅（或Si / SiGe）上形成厚的氧化层，以及 在单晶Si（或Si / siGe）上方的薄氧化层，随后进行受控氧化物蚀刻以除去单晶Si（或Si / siGe）上的薄氧化层，同时将自对准氧化物掩模层留在 多晶硅（或Si / siGe）。 然后在自对准掩模形成之后形成隆起的外在基体。 该自对准氧化物掩模阻挡从扩展的外在碱基到收集器角的扩散。

公开(公告)号：US07288827B2

公开(公告)日：2007-10-30

申请号：US10969718

申请日：2004-10-20

申请人： Huajie Chen ,  Kathryn T. Schonenberg ,  Gregory G. Freeman ,  Andreas D. Stricker ,  Jae-Sung Rieh

发明人： Huajie Chen ,  Kathryn T. Schonenberg ,  Gregory G. Freeman ,  Andreas D. Stricker ,  Jae-Sung Rieh

IPC分类号： H01L27/082 ,  H01L27/102

CPC分类号： H01L29/66242 ,  H01L21/32105 ,  Y10S438/911

摘要： A self-aligned oxide mask is formed utilizing differential oxidation rates of different materials. The self-aligned oxide mask is formed on a CVD grown base NPN base layer which compromises single crystal Si (or Si/SiGe) at active area and polycrystal Si (or Si/SiGe) on the field. The self-aligned mask is fabricated by taking advantage of the fact that poly Si (or Si/SiGe) oxidizes faster than single crystal Si (or Si/SiGe). An oxide film is formed over both the poly Si (or Si/siGe) and the single crystal Si (or Si/siGe) by using an thermal oxidation process to form a thick oxidation layer over the poly Si (or Si/siGe) and a thin oxidation layer over the single crystal Si (or Si/siGe), followed by a controlled oxide etch to remove the thin oxidation layer over the single crystal Si (or Si/siGe) while leaving the self-aligned oxide mask layer over the poly Si (or Si/siGe). A raised extrinsic base is then formed following the self-aligned mask formation. This self-aligned oxide mask blocks B diffusion from the raised extrinsic base to the corner of collector.

摘要翻译： 使用不同材料的不同氧化速率形成自对准氧化物掩模。 自对准氧化物掩模形成在CVD生长的基底NPN基层上，其牺牲了场上的活性区域上的单晶Si（或Si / SiGe）和多晶Si（或Si / SiGe）。 通过利用多晶硅（或Si / SiGe）比单晶Si（或Si / SiGe）更快地氧化的事实来制造自对准掩模。 通过使用热氧化工艺在多晶硅（或Si / siGe）和单晶Si（或Si / siGe）上形成氧化膜，以在多晶硅（或Si / SiGe）上形成厚的氧化层，以及 在单晶Si（或Si / siGe）上方的薄氧化层，随后进行受控氧化物蚀刻以除去单晶Si（或Si / siGe）上的薄氧化层，同时将自对准氧化物掩模层留在 多晶硅（或Si / siGe）。 然后在自对准掩模形成之后形成隆起的外在基体。 该自对准氧化物掩模阻挡从扩展的外在碱基到收集器角的扩散。

公开(公告)号：US20140175932A1

公开(公告)日：2014-06-26

申请号：US14235617

申请日：2011-08-29

申请人： Hui Huang ,  Wenming Zhang ,  Yong Xiao ,  Xueying Zeng ,  Huajie Chen ,  Dongsuo Chen ,  Yusheng Hu

发明人： Hui Huang ,  Wenming Zhang ,  Yong Xiao ,  Xueying Zeng ,  Huajie Chen ,  Dongsuo Chen ,  Yusheng Hu

IPC分类号： H02K1/27

CPC分类号： H02K1/2766 ,  H02K1/246 ,  H02K2213/03

摘要： Disclosed are a motor and a rotor thereof. Taking the distance between the two endpoints of a permanent magnet (20) of a motor rotor that are on the side away from the centre of an iron core (10) as the length L of the permanent magnet, and the distance between a line connecting the two endpoints of the permanent magnet that are on the side away from the centre of the iron core (10) and the centre point on the side of the permanent magnet that is close to the centreline of the iron core as the width H of the permanent magnet, then H/L≧1/10. By adjusting the relationship between the length L and width H of the permanent magnet, the air gap magnetic density of the permanent magnet can be effectively increased, i.e. increasing the permanent magnetic flux of the rotor in the directions of the d axis and q axis. Hence, the utilization rate of the permanent magnet and the performance of the rotor can be improved without increasing the number of permanent magnets used.

摘要翻译： 公开了一种电机及其转子。 将离开铁芯（10）的中心的一侧的电动机转子的永久磁铁（20）的两个端点之间的距离设为永久磁铁的长度L，以及连接线 远离铁芯（10）的中心的一侧的永久磁体的两个端点和永久磁体侧的中心点接近铁芯的中心线，作为 永磁体，H /L≥1/ 10。 通过调整永磁体的长度L和宽度H之间的关系，可以有效地增加永磁体的气隙磁密度，即增加转子在d轴和q轴方向上的永久磁通量。 因此，可以提高永久磁铁的利用率和转子的性能，而不增加使用的永磁体的数量。

公开(公告)号：US20140167550A1

公开(公告)日：2014-06-19

申请号：US14235611

申请日：2011-08-29

申请人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

发明人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

IPC分类号： H02K1/27

CPC分类号： H02K1/2766 ,  H02K1/246 ,  H02K2213/03

摘要： Disclosed are a motor rotor and a motor having same, wherein the motor rotor comprises an iron core (10) and permanent magnets (20) provided within the iron core (10), sets of mounting grooves (30) are provided in the peripheral direction of the iron core, with each set of mounting grooves comprising more than two mounting grooves (30) arranged intermittently in the radial direction of the iron core (10). The permanent magnets (20) are correspondingly embedded into the individual mounting grooves (30). The thickness of the permanent magnet (20) at the centre of the cross section thereof and perpendicular to the rotor axis is greater than the thickness at both ends thereof. The rotor optimizes the shape of the permanent magnets (20) and improves the efficiency of the motor.

摘要翻译： 公开了一种电动机转子和具有该电动机转子的电动机，其中，所述电动机转子包括设置在所述铁芯（10）内的铁芯（10）和永磁体（20），所述安装槽（30） 其中每组安装槽包括沿着铁芯（10）的径向方向间歇地设置的多于两个的安装槽（30）。 永磁体（20）相应地嵌入到各个安装槽（30）中。 永磁体（20）的横截面中心并且与转子轴线垂直的厚度大于其两端的厚度。 转子优化永磁体（20）的形状，提高电动机的效率。

公开(公告)号：US20140152139A1

公开(公告)日：2014-06-05

申请号：US14235408

申请日：2011-08-31

申请人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

发明人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

IPC分类号： H02K1/27

CPC分类号： H02K1/2766 ,  H02K1/276 ,  H02K21/16 ,  H02K2213/03

摘要： Disclosed is a permanent magnet synchronous motor comprising a stator (1) and a rotor (2), wherein the stator (1) is provided thereon with a plurality of wire slots (3) in a circumferential direction, the rotor (2) is provided therein with a plurality of sets of magnet slots (5) in a circumferential direction, with the wire slots (3) being provided therein with coils (4) and the sets of magnet slots (5) being provided therein with permanent magnets (7); the number of poles of the permanent magnets (7) on the rotor (2) is P, the spacing between two adjacent sets of magnet slots (5) is W, the tooth width of the stator (1) is Lc, and the number of the wire slots (3) on the stator (1) is S, wherein 3PW/LcS=K, and 0.15≦K≦0.85. The permanent magnet synchronous motor can reduce dependence on rare earth and improve the output torque of the permanent magnet synchronous motor.

摘要翻译： 公开了一种永磁同步电动机，其包括定子（1）和转子（2），其中定子（1）沿圆周方向设置有多个线槽（3），转子（2）设置 其中在圆周方向上具有多组磁体槽（5），其中线槽（3）中设置有线圈（4），并且在其中设置有永磁体（7）的一组磁体槽（5） ; 转子（2）上的永磁体（7）的极数为P，相邻的两组磁体槽（5）之间的间隔为W，定子（1）的齿宽为Lc， 定子（1）上的电线槽（3）的S为S，其中3PW / LcS = K，和0.15＆nlE; K＆nlE; 0.85。 永磁同步电机可以减少对稀土的依赖，提高永磁同步电机的输出转矩。

公开(公告)号：US20140145539A1

公开(公告)日：2014-05-29

申请号：US14235574

申请日：2011-08-31

申请人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

发明人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

IPC分类号： H02K1/27

CPC分类号： H02K1/2766

摘要： Disclosed is a permanent magnet synchronous electric machine, comprising a stator (1) and a rotor (2). A plurality of wire grooves (3) are provided peripherally on the stator (1), coils (4) are provided within the wire grooves (3), and a stator tooth (5) is provided between adjacent wire grooves (3). A plurality of magnetic groove sets (6) is provided peripherally within the rotor (2), each of the magnetic groove sets (6) comprising at least two magnetic steel grooves (7), with permanent magnets (8) placed within the magnetic steel grooves (7), and a magnetic channel (9) formed between the magnetic steel grooves (7). Of two adjacent magnetic channels (9), an end of one magnetic channel (9) is opposite a wire groove (3) and an end of the other magnetic channel (9) is opposite a stator tooth (5). The permanent magnet synchronous electric machine has a more steady output torque, and also reduces the noise and vibration provided during operation.

摘要翻译： 公开了一种永磁同步电机，包括定子（1）和转子（2）。 在定子（1）周围设有多个线槽（3），线圈（4）设置在线槽（3）内，定子齿（5）设置在相邻的线槽（3）之间。 在转子（2）的周围设置有多个磁性槽组（6），每个磁性槽组（6）包括至少两个磁钢槽（7），永磁体（8）放置在磁钢 凹槽（7）和形成在磁钢槽（7）之间的磁通道（9）。 在两个相邻的磁通道（9）中，一个磁通道（9）的一端与电线槽（3）相对，另一磁通道（9）的一端与定子齿（5）相对。 永磁同步电机具有更稳定的输出转矩，并且还降低了运行中提供的噪声和振动。

公开(公告)号：US07923782B2

公开(公告)日：2011-04-12

申请号：US10708378

申请日：2004-02-27

申请人： Huilong Zhu ,  Philip J. Oldiges ,  Bruce B. Doris ,  Xinlin Wang ,  Oleg Gluschenkov ,  Huajie Chen ,  Ying Zhang

发明人： Huilong Zhu ,  Philip J. Oldiges ,  Bruce B. Doris ,  Xinlin Wang ,  Oleg Gluschenkov ,  Huajie Chen ,  Ying Zhang

IPC分类号： H01L27/01 ,  H01L27/12

CPC分类号： H01L29/7849 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78618 ,  H01L29/78687

摘要： Channel depth in a field effect transistor is limited by an intra-layer structure including a discontinuous film or layer formed within a layer or substrate of semiconductor material. Channel depth can thus be controlled much in the manner of SOI or UT-SOI technology but with less expensive substrates and greater flexibility of channel depth control while avoiding floating body effects characteristic of SOI technology. The profile or cross-sectional shape of the discontinuous film may be controlled to an ogee or staircase shape to improve short channel effects and reduce source/drain and extension resistance without increase of capacitance. Materials for the discontinuous film may also be chosen to impose stress on the transistor channel from within the substrate or layer and provide increased levels of such stress to increase carrier mobility. Carrier mobility may be increased in combination with other meritorious effects.

摘要翻译： 场效应晶体管中的沟道深度由包括在半导体材料的层或衬底内形成的不连续膜或层的层内结构限制。 因此，可以以SOI或UT-SOI技术的方式控制通道深度，但是具有较便宜的衬底和更大的通道深度控制的灵活性，同时避免SOI技术的浮体效应特性。 不连续膜的轮廓或横截面形状可以被控制为奥格或阶梯形状，以改善短通道效应，并且在不增加电容的情况下降低源极/漏极和延伸电阻。 也可以选择用于不连续膜的材料以在衬底或层内从晶体管沟道施加应力，并提供增加的这种应力水平以增加载流子迁移率。 携带者的流动性可能会与其他有利的影响相结合。

公开(公告)号：US20100032684A1

公开(公告)日：2010-02-11

申请号：US12539248

申请日：2009-08-11

申请人： Stephen W. Bedell ,  Huajie Chen ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

发明人： Stephen W. Bedell ,  Huajie Chen ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC分类号： H01L29/267 ,  H01L29/161 ,  H01L29/165

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02694 ,  H01L21/2658

摘要： A method for fabricating substantially relaxed SiGe alloy layers with a reduced planar defect density is disclosed The method of the present invention includes forming a strained Ge-containing layer on a surface of a Si-containing substrate; implanting ions at or below the Ge-containing layer/Si-containing substrate interface and heating to form a substantially relaxed SiGe alloy layer that has a reduced planar defect density. A substantially relaxed SiGe-on-insulator substrate material having a SiGe layer with a reduced planar defect density as well as heterostructures containing the same are also provided.

摘要翻译： 公开了一种制造具有减小的平面缺陷密度的基本上松弛的SiGe合金层的方法。本发明的方法包括在含Si衬底的表面上形成应变的含Ge层; 在含锗层/含Si衬底界面处或下方注入离子，并加热以形成具有减小的平面缺陷密度的基本上松弛的SiGe合金层。 还提供了具有具有减小的平面缺陷密度的SiGe层以及含有该SiGe层的异质结构的基本上松弛的绝缘体上硅衬底材料。

公开(公告)号：US20080233687A1

公开(公告)日：2008-09-25

申请号：US12132698

申请日：2008-06-04

申请人： Huajie Chen ,  Omer H. Dokumaci ,  Oleg G. Gluschenkov ,  Werner A. Rausch

发明人： Huajie Chen ,  Omer H. Dokumaci ,  Oleg G. Gluschenkov ,  Werner A. Rausch

IPC分类号： H01L21/336

CPC分类号： H01L21/26533 ,  H01L21/02238 ,  H01L21/26513 ,  H01L21/31654 ,  H01L21/31675 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/66636

摘要： A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.

摘要翻译： 形成场效应晶体管的方法产生更浅和更尖的结，同时在与当前制造技术一致的工艺中最大化掺杂剂活化。 更具体地，本发明增加了硅衬底的顶表面的氧含量。 优选在增加硅衬底的顶表面的氧含量之前清洁硅衬底的顶表面。 硅衬底的顶表面的氧含量高于硅衬底的其它部分，但低于防止外延生长的量。 这允许本发明在硅​​衬底的顶表面上外延生长硅层。 此外，增加的氧含量基本上限制外延硅层内的掺杂剂移动到硅衬底中。