公开(公告)号：US20200343300A1

公开(公告)日：2020-10-29

申请号：US16395396

申请日：2019-04-26

Applicant: Everspin Technologies, Inc.

Inventor： Sanjeev AGGARWAL ,  Jijun SUN

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region. The intermediate region may be formed of a dielectric material and comprise at least two different metal oxides.

公开(公告)号：US20190123268A1

公开(公告)日：2019-04-25

申请号：US16230031

申请日：2018-12-21

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

IPC: H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US20240397731A1

公开(公告)日：2024-11-28

申请号：US18792891

申请日：2024-08-02

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  Sanjeev AGGARWAL ,  Han-Jong CHIA ,  Jon SLAUGHTER ,  Renu WHIG

IPC: H10B61/00 ,  G11B5/39 ,  G11C11/16 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetoresistive stack, including an electrically conductive material, and a seed region disposed above the electrically conductive material and including chromium (Cr). A chromium content of the seed region is large enough to render the seed region substantially non-magnetic. The magnetoresistive stack includes a fixed magnetic region disposed above the seed region. The fixed magnetic region includes a synthetic antiferromagnetic structure including a first ferromagnetic region disposed above the seed region, a coupling layer disposed on and in contact with the first ferromagnetic region, and a second ferromagnetic region disposed on and in contact with the coupling layer. The magnetoresistive stack includes one or more dielectric layers disposed above the second ferromagnetic region, and a free magnetic region disposed above the one or more dielectric layers.

公开(公告)号：US20230225135A1

公开(公告)日：2023-07-13

申请号：US18185725

申请日：2023-03-17

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  Sanjeev AGGARWAL ,  Han-Jong CHIA ,  Jon M. SLAUGHTER ,  Renu WHIG

IPC: H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

公开(公告)号：US20210384415A1

公开(公告)日：2021-12-09

申请号：US17285364

申请日：2019-10-17

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

Abstract: Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios. Exemplary magnetoresistive stacks—for example, used in a magnetic tunnel junction (MTJ) magnetoresistive device—of the present disclosure include one or more multilayer synthetic antiferromagnetic structures—SAFs—or synthetic ferromagnetic structures—SyFs—(A) in order to promote stability of the SAF or SyF, e.g., for smaller-sized MTJs (200).

公开(公告)号：US20210343936A1

公开(公告)日：2021-11-04

申请号：US17270681

申请日：2019-08-22

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01C10/00

Abstract: A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.

公开(公告)号：US20200328252A1

公开(公告)日：2020-10-15

申请号：US16380207

申请日：2019-04-10

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

Abstract: A method of manufacturing a magnetoresistive device may include forming a first ferromagnetic region, forming an intermediate region on or above the first ferromagnetic region. The intermediate region may be formed of a dielectric material and include nitrogen. The method may also include forming a second ferromagnetic region on or above the intermediate region.

公开(公告)号：US20200266235A1

公开(公告)日：2020-08-20

申请号：US16870099

申请日：2020-05-08

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  Sanjeev AGGARWAL ,  Han-Jong CHIA ,  Jon M. SLAUGHTER ,  Renu WHIG

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  G11B5/39 ,  H01L43/10

Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).

公开(公告)号：US20190386212A1

公开(公告)日：2019-12-19

申请号：US16551952

申请日：2019-08-27

Applicant: Everspin Technologies, Inc.

Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

IPC: H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

公开(公告)号：US20190280198A1

公开(公告)日：2019-09-12

申请号：US16419165

申请日：2019-05-22

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

IPC: H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.