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公开(公告)号：US20250063953A1
公开(公告)日：2025-02-20
申请号：US18933142
申请日：2024-10-31
Applicant: Everspin Technologies, Inc.
Inventor： Renu WHIG , Sumio IKEGAWA , Jon SLAUGHTER , Michael TRAN , Jacob Wang CHENCHEN , Ganesh Kolliyil RAJAN
Abstract: A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron.
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2.发明申请公开(公告)号：US20200295255A1
公开(公告)日：2020-09-17
申请号：US16890215
申请日：2020-06-02
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (1) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may he disposed on the first layer.
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公开(公告)号：US20190221737A1
公开(公告)日：2019-07-18
申请号：US16360099
申请日：2019-03-21
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Phillip MATHER , Kenneth SMITH , Sanjeev AGGARWAL , Jon SLAUGHTER , Nicholas RIZZO
CPC classification number: H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
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公开(公告)号：US20230380297A1
公开(公告)日：2023-11-23
申请号：US18360564
申请日：2023-07-27
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Jon SLAUGHTER , Renu WHIG
Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.
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公开(公告)号：US20210111223A1
公开(公告)日：2021-04-15
申请号：US17131926
申请日：2020-12-23
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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Patent Agency Ranking
公开(公告)号：US20190165253A1
公开(公告)日：2019-05-30
申请号：US16188934
申请日：2018-11-13
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Jon SLAUGHTER , Renu WHIG
Abstract: A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.
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7.发明申请公开(公告)号：US20190123266A1
公开(公告)日：2019-04-25
申请号：US16225670
申请日：2018-12-19
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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公开(公告)号：US20240090335A1
公开(公告)日：2024-03-14
申请号：US18307633
申请日：2023-04-26
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Phillip MATHER , Kenneth SMITH , Sanjeev AGGARWAL , Jon SLAUGHTER , Nicholas RIZZO
CPC classification number: H10N50/01 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H10B61/00 , H10N50/10 , H10N50/80 , H10N59/00
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
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公开(公告)号：US20210265563A1
公开(公告)日：2021-08-26
申请号：US17245882
申请日：2021-04-30
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Renu WHIG , Phillip MATHER , Kenneth SMITH , Sanjeev AGGARWAL , Jon SLAUGHTER , Nicholas RIZZO
Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.
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公开(公告)号：US20210135096A1
公开(公告)日：2021-05-06
申请号：US17120959
申请日：2020-12-14
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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