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    Magnetic field sensor
    2.
    发明申请
    Magnetic field sensor 有权
    磁场传感器

    公开(公告)号：US20160163962A1

    公开(公告)日：2016-06-09

    申请号：US15041178

    申请日：2016-02-11

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Phillip MATHER ,  Jon SLAUGHTER ,  Nicholas RIZZO

    IPC: H01L43/02

    CPC classification number: H01L43/02 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.

    Abstract translation: 磁传感器包括多个组，每个组包括多个磁隧道结（MTJ）装置，其具有多个导体，其被配置成并联连接一组内的MTJ装置，并且该组可串联实现材料电阻的独立优化 面积（RA），并设置总的器件电阻，使得总的桥接电阻不是很高，以至于Johnson噪声成为限制信号的关键，而不是那么低，使得CMOS元件可能会削弱读取信号。 或者，串联的至少两组中的每一个中的磁隧道结装置和并联的至少两个组，导致电连接路径的单独配置和参考层的磁参考方向，导致两者的独立优化 功能，以及更多设备设计和布局自由。 感测元件的X和Y间距被布置成使得例如稳定一个感测元件的右侧的线段; 也稳定了相邻感测元件的左侧。

    MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME
    5.
    发明申请
    MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME 审中-公开

    公开(公告)号：US20190123268A1

    公开(公告)日：2019-04-25

    申请号：US16230031

    申请日：2018-12-21

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

    IPC: H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME
    7.
    发明申请
    MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME 审中-公开

    公开(公告)号：US20190386212A1

    公开(公告)日：2019-12-19

    申请号：US16551952

    申请日：2019-08-27

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

    IPC: H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

    MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME
    8.
    发明申请
    MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME 审中-公开

    公开(公告)号：US20190280198A1

    公开(公告)日：2019-09-12

    申请号：US16419165

    申请日：2019-05-22

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Renu WHIG ,  Jijun SUN ,  Nicholas RIZZO ,  Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Frederick MANCOFF

    IPC: H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

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