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11.发明授权公开(公告)号：US08692283B2
公开(公告)日：2014-04-08
申请号：US13407291
申请日：2012-02-28
申请人： Tsutomu Nakanishi , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Koji Asakawa , Shinji Nunotani , Takanobu Kamakura
发明人： Tsutomu Nakanishi , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Kenji Nakamura , Koji Asakawa , Shinji Nunotani , Takanobu Kamakura
IPC分类号： H01L33/40
CPC分类号： B82Y20/00 , B82Y40/00 , H01L33/42 , H01L51/5209
摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.
摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。
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12.发明授权Displaying device and lighting device employing organic electroluminescence element 有权使用有机电致发光元件的显示装置和照明装置公开(公告)号：US07928353B2
公开(公告)日：2011-04-19
申请号：US12392691
申请日：2009-02-25
IPC分类号： H01J1/46
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。
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公开(公告)号：US08450768B2
公开(公告)日：2013-05-28
申请号：US13335984
申请日：2011-12-23
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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公开(公告)号：US08101964B2
公开(公告)日：2012-01-24
申请号：US12363198
申请日：2009-01-30
IPC分类号： H01L30/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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公开(公告)号：US20090242925A1
公开(公告)日：2009-10-01
申请号：US12363198
申请日：2009-01-30
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％以上的金属部分直线地继续而不断开，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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公开(公告)号：US20120091499A1
公开(公告)日：2012-04-19
申请号：US13335984
申请日：2011-12-23
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L2933/0091
摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。
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17.发明申请SOLAR CELL AND METHOD FOR MANUFACTURING METAL ELECTRODE LAYER TO BE USED IN THE SOLAR CELL 审中-公开用于制造在太阳能电池中使用的金属电极层的太阳能电池和方法公开(公告)号：US20100175749A1
公开(公告)日：2010-07-15
申请号：US12441036
申请日：2009-01-29
申请人： Eishi Tsutsumi , Tsutomu Nakanishi , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Satoshi Mikoshiba
发明人： Eishi Tsutsumi , Tsutomu Nakanishi , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Satoshi Mikoshiba
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022433 , H01L31/03682 , H01L31/03762 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity.
摘要翻译： 太阳能电池包括：形成在基板上的第一电极层; 形成在所述第一电极层上的发生层; 以及形成在所述发生层上的第二电极层，所述第一电极层和所述第二电极层中的至少一个是具有透光性的金属电极层，所述金属电极层具有贯穿所述金属电极层的多个开口。 金属电极层包括金属部件，金属电极层的任意两个金属部分彼此连续而没有切割部分，金属电极层的膜厚度在10nm至200nm范围内，并且开口尺寸为 等于或小于用于发电的光的波长的1/2。
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18.发明申请DISPLAYING DEVICE AND LIGHTING DEVICE EMPLOYING ORGANIC ELECTROLUMINESCENCE ELEMENT 有权显示设备和照明设备使用有机电致发光元件公开(公告)号：US20090236962A1
公开(公告)日：2009-09-24
申请号：US12392691
申请日：2009-02-25
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。
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公开(公告)号：US08921887B2
公开(公告)日：2014-12-30
申请号：US13221319
申请日：2011-08-30
申请人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。
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公开(公告)号：US20120223355A1
公开(公告)日：2012-09-06
申请号：US13222281
申请日：2011-08-31
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Takanobu Kamakura , Shinji Nunotani
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Kumi Masunaga , Takanobu Kamakura , Shinji Nunotani
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.
摘要翻译： 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。
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