公开(公告)号：US08835954B2

公开(公告)日：2014-09-16

申请号：US13221326

申请日：2011-08-30

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/60 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US08692283B2

公开(公告)日：2014-04-08

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/40

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US08921887B2

公开(公告)日：2014-12-30

申请号：US13221319

申请日：2011-08-30

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20120223355A1

公开(公告)日：2012-09-06

申请号：US13222281

申请日：2011-08-31

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/36

CPC分类号： H01L33/38 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。

公开(公告)号：US09159880B2

公开(公告)日：2015-10-13

申请号：US13222281

申请日：2011-08-31

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/38 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。

公开(公告)号：US20120061712A1

公开(公告)日：2012-03-15

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US09318661B2

公开(公告)日：2016-04-19

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US20100236620A1

公开(公告)日：2010-09-23

申请号：US12706338

申请日：2010-02-16

申请人： Tsutomu NAKANISHI ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Kumi Masunaga ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

发明人： Tsutomu NAKANISHI ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Kumi Masunaga ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/1884 ,  H01L31/022433 ,  H01L31/075 ,  Y02E10/548

摘要： According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 μm2. The opening ratio is in the range of 10% to 66%.

摘要翻译： 根据本发明的一个方面，提供了一种薄膜太阳能电池，其包括基板，形成在所述基板上的光电转换层，所述光电转换层的厚度为1μm以下，所述光电转换层包括 p型半导体层，n型半导体层，并且是位于所述p型半导体层和所述n型半导体层之间的i型半导体层，形成在光入射表面上的光入射侧电极层 的所述光电转换层和形成在与所述光入射表面相对的表面上的对电极层。 所述光入射侧电极层具有贯穿所述层的多个开口，其厚度在10nm至200nm的范围内。 每个所述开口占据80nm 2至0.8μm2的面积。 开口率在10％至66％的范围内。

公开(公告)号：US09136405B2

公开(公告)日：2015-09-15

申请号：US12700063

申请日：2010-02-04

申请人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

摘要翻译： 本发明提供一种发光效率和光透射性优异的透光型太阳能电池，并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层，光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口，并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积，并且开口率在10％至66％的范围内。 在700nm波长下，全细胞的透射率为5％以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中，可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

公开(公告)号：US20130092219A1

公开(公告)日：2013-04-18

申请号：US13619360

申请日：2012-09-14

申请人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.

摘要翻译： 本发明提供一种太阳能电池，其包括光电转换层，金属多孔膜和折射率调节层的层压体。 金属多孔膜位于光入射侧，与光电转换层直接接触，并且具有通过膜而钻出的多个开口。 折射率调节层覆盖金属多孔膜的表面和开口的内表面的至少一部分，折射率为1.35〜4.2。 如果采用纳米制造的金属膜作为电极，则本发明能够提供能够通过使用电场增强效果实现有效的光电转换的太阳能电池。