Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same
    12.
    发明申请
    Chalcogenide-Based Photovoltaic Devices and Methods of Manufacturing the Same 有权
    基于硫族化物的光伏器件及其制造方法

    公开(公告)号:US20110011460A1

    公开(公告)日:2011-01-20

    申请号:US12641893

    申请日:2009-12-18

    IPC分类号: H01L31/0272 C23C14/34

    摘要: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

    摘要翻译: 在一个示例性实施例中,一种方法包括在衬底上溅射一个或多个吸收层。 在特定实施例中,在溅射之前和在一个或多个吸收层中的每一个的溅射期间,将衬底预加热到至少约300摄氏度的衬底温度,并且将至少一个 吸收层在压力为至少0.5帕斯卡的溅射气氛中进行。 另外,在特定实施例中,至少一个吸收层的溅射包括溅射靶,该溅射靶包含硫族化物合金,其包含铜(Cu)和一种或多种硫(S),硒(Se)或 碲(Te)。

    Chalcogenide-based photovoltaic devices and methods of manufacturing the same
    14.
    发明授权
    Chalcogenide-based photovoltaic devices and methods of manufacturing the same 有权
    基于硫族化物的光伏器件及其制造方法

    公开(公告)号:US08969719B2

    公开(公告)日:2015-03-03

    申请号:US12641893

    申请日:2009-12-18

    摘要: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

    摘要翻译: 在一个示例性实施例中,一种方法包括在衬底上溅射一个或多个吸收层。 在特定实施例中,在溅射之前和在一个或多个吸收层中的每一个的溅射期间,将衬底预加热到至少约300摄氏度的衬底温度,并且将至少一个 吸收层在压力为至少0.5帕斯卡的溅射气氛中进行。 另外,在特定实施例中,至少一个吸收层的溅射包括溅射靶,该溅射靶包含硫族化物合金,其包含铜(Cu)和一种或多种硫(S),硒(Se)或 碲(Te)。