公开(公告)号：US20130045396A1

公开(公告)日：2013-02-21

申请号：US13620019

申请日：2012-09-14

申请人： Erol Girt ,  Mariana Rodica Munteanu ,  Hans Jürgen Richter ,  Felix Trejo

发明人： Erol Girt ,  Mariana Rodica Munteanu ,  Hans Jürgen Richter ,  Felix Trejo

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11B5/65 ,  G11B5/656

摘要： A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction.

摘要翻译： 在高密度记录硬盘驱动器中，使用具有第一铁磁层，第二铁磁层和铁磁耦合层的铁磁耦合磁记录介质以将第一铁磁层铁磁耦合到第二铁磁层作为具有高MrT的稳定磁介质。 第一铁磁层是稳定层，第二铁磁层是主记录层。 铁磁耦合层包括具有通过RKKY相互作用在所述第一铁磁层和所述第二铁磁层之间产生铁磁耦合的厚度的导电材料。

公开(公告)号：US06852426B1

公开(公告)日：2005-02-08

申请号：US10106072

申请日：2002-03-27

申请人： Erol Girt ,  Mariana Rodica Munteanu ,  Hans Jürgen Richter

发明人： Erol Girt ,  Mariana Rodica Munteanu ,  Hans Jürgen Richter

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11B5/732 ,  G11B5/7325 ,  Y10T428/12465 ,  Y10T428/12646 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/1291 ,  Y10T428/12931 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/265

摘要： A high areal recording density longitudinal magnetic recording medium having improved thermal stability and signal-to-medium noise ratio (“SMNR”), comprises: (a) a non-magnetic substrate having at least one surface; and (b) a layer stack overlying the at least one surface, comprising a plurality of vertically spaced-apart ferromagnetic layers, each vertically adjacent pair of ferromagnetic layers being spaced-apart by a respective non-magnetic spacer layer, wherein: (i) at least one of the plurality of vertically adjacent, spaced-apart pairs of ferromagnetic layers forms an anti-ferromagnetically coupled media (“AFC”) component of the magnetic recording medium; and (ii) at least one of the plurality of vertically adjacent, spaced-apart pairs of ferromagnetic layers forms a laminated media (“LM”) component of the magnetic recording medium.

摘要翻译： 具有改善的热稳定性和信噪比（“SMNR”）的高面积记录密度纵向磁记录介质包括：（a）具有至少一个表面的非磁性基底; 每个垂直相邻的一对铁磁层由相应的非磁性间隔层间隔开，其中：（i）覆盖所述至少一个表面的层叠层， 多个垂直相邻的间隔开的铁磁层对中的至少一个形成磁记录介质的抗铁磁耦合介质（“AFC”）组件; 和（ii）多个垂直相邻的间隔开的铁磁层对中的至少一个形成磁记录介质的层压介质（“LM”）组件。

公开(公告)号：US20100209739A1

公开(公告)日：2010-08-19

申请号：US12771962

申请日：2010-04-30

申请人： Erol Girt ,  Chung Yuang Shih ,  Miaogen Lu ,  Kueir-Weei Chour ,  Connie Chunling Liu ,  Mariana Rodica Munteanu ,  Jean Ling Lee

发明人： Erol Girt ,  Chung Yuang Shih ,  Miaogen Lu ,  Kueir-Weei Chour ,  Connie Chunling Liu ,  Mariana Rodica Munteanu ,  Jean Ling Lee

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  G11B5/65

摘要： A magnetic recording medium having a Au, Ag-containing magnetic layer having Co, Cr, Ag and Au; the magnetic recording layer having Co-containing magnetic grains surrounded by substantially nonmagnetic Cr-containing grain boundaries; wherein said Ag and said Au are substantially immiscible in the Co-containing magnetic grains is disclosed.

摘要翻译： 具有含有Co，Cr，Ag和Au的Au，含Ag的磁性层的磁记录介质; 所述磁记录层具有由基本上非磁性的含Cr晶界包围的含Co磁性颗粒; 其中所述Ag和所述Au在含Co磁性晶粒中基本上不混溶。

公开(公告)号：US06828036B1

公开(公告)日：2004-12-07

申请号：US10078466

申请日：2002-02-21

申请人： Mariana Rodica Munteanu ,  Erol Girt

发明人： Mariana Rodica Munteanu ,  Erol Girt

IPC分类号： G11B566

CPC分类号： G11B5/732 ,  G11B5/656 ,  G11B5/66 ,  G11B5/7325 ,  Y10T428/12646 ,  Y10T428/12882 ,  Y10T428/1291 ,  Y10T428/12931 ,  Y10T428/12986 ,  Y10T428/24975 ,  Y10T428/265

摘要： An anti-ferromagnetically coupled (“AFC”), high areal density magnetic recording medium of simplified thin film layer structure and having improved thermal stability and signal-to-medium noise ratio (“SMNR”) comprises a stack of thin film layers including, in overlying sequence from a surface of a non-magnetic substrate: (a) a non-magnetic seed layer (“SDL”); (b) at least one non-magnetic underlayer (“UL”); (c) a first ferromagnetic layer (“M1”); (d) a non-magnetic spacer layer (“SPL”); and (e) a second ferromagnetic layer serving as a magnetic recording layer (“M2”); wherein: the first ferromagnetic layer (c) serves as a combined interlayer (“IL”) and “bottom” magnetic layer (“BML”) and the non-magnetic spacer layer (d) provides RKKY-type coupling between the first ferromagnetic layer (c) and the second ferromagnetic layer (e) for stabilizing the medium via anti-ferromagnetic coupling (AFC) and improving the SMNR.

摘要翻译： 具有简化薄膜层结构并具有改善的热稳定性和信噪比（SMNR））的高铁磁耦合（“AFC”），高密度磁记录介质包括一层薄膜层， （a）非磁性种子层（“SDL”）;（b）至少一个非磁性底层（“UL”）;（c）第一铁磁性层 层（“M1”）;（d）非磁性间隔层（“SPL”）; 和（e）用作磁记录层（“M2”）的第二铁磁层; 其中：第一铁磁层（c）用作组合中间层（“IL”）和“底部”磁性层（“BML”），非磁性间隔层（d）提供第一铁磁层 （c）和第二铁磁层（e），用于通过反铁磁耦合（AFC）稳定介质并改善SMNR。

公开(公告)号：US08981211B2

公开(公告)日：2015-03-17

申请号：US12405963

申请日：2009-03-17

申请人： Erol Girt ,  Mariana Rodica Munteanu

发明人： Erol Girt ,  Mariana Rodica Munteanu

IPC分类号： H01L31/00 ,  H01L21/02 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L21/02433 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02521 ,  H01L29/045 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/03928 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1872 ,  Y02E10/541 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.

摘要翻译： 在一个实施方案中，使用沉积在种子层上的非晶或纳米晶种层和一个或多个金属层与fcc，hcp或bcc晶体结构的组合来使用层间结构来外延取向 在非单晶衬底上的半导体层。 在一些实施方案中，该层间结构用于建立多个半导体层的外延生长，半导体和氧化物层的组合，半导体和金属层的组合以及半导体，氧化物和金属层的组合。 该层间结构也可用于光伏电池中p型和n型半导体的外延生长。

公开(公告)号：US08410004B2

公开(公告)日：2013-04-02

申请号：US13443704

申请日：2012-04-10

申请人： Erol Girt ,  Mariana Rodica Munteanu

发明人： Erol Girt ,  Mariana Rodica Munteanu

IPC分类号： H01L31/0272

CPC分类号： H01L31/0324 ,  H01L21/02568 ,  H01L21/02631 ,  H01L21/02667 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

摘要翻译： 在一个示例性实施例中，一种方法包括在衬底上沉积一个或多个薄膜层。 更具体地，薄膜层中的至少一个包括至少一种正电性材料，并且薄膜层中的至少一个包括至少一种适合于用正电性材料形成硫族化物材料的硫族元素材料。 该方法还包括以每秒平均加热速度或超过1摄氏度的温度退火一个或多个沉积的薄膜层。 该方法还可以包括以等于或超过0.1摄氏度/秒的平均冷却速率冷却退火的一个或多个薄膜层。

公开(公告)号：US20120238053A1

公开(公告)日：2012-09-20

申请号：US13443704

申请日：2012-04-10

申请人： Erol Girt ,  Mariana Rodica Munteanu

发明人： Erol Girt ,  Mariana Rodica Munteanu

IPC分类号： H01L31/0264

CPC分类号： H01L31/0324 ,  H01L21/02568 ,  H01L21/02631 ,  H01L21/02667 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

摘要翻译： 在一个示例性实施例中，一种方法包括在衬底上沉积一个或多个薄膜层。 更具体地，薄膜层中的至少一个包括至少一种正电性材料，并且薄膜层中的至少一个包括至少一种适合于用正电性材料形成硫族化物材料的硫族元素材料。 该方法还包括以每秒平均加热速度或超过1摄氏度的温度退火一个或多个沉积的薄膜层。 该方法还可以包括以等于或超过0.1摄氏度/秒的平均冷却速率冷却退火的一个或多个薄膜层。

公开(公告)号：US08158880B1

公开(公告)日：2012-04-17

申请号：US12016172

申请日：2008-01-17

申请人： Erol Girt ,  Mariana Rodica Munteanu

发明人： Erol Girt ,  Mariana Rodica Munteanu

IPC分类号： H01L31/00 ,  H01L27/14

CPC分类号： H01L31/032 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18 ,  H01L51/0037 ,  H01L51/426 ,  H01L51/4293 ,  Y02E10/548 ,  Y10S977/712 ,  Y10S977/72 ,  Y10S977/778 ,  Y10S977/948 ,  Y10S977/954

摘要： Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

摘要翻译： 用于将太阳辐射转化为电自由能的光伏结构。 在具体实施方案中，光伏电池包括具有由氧化物基体包围的纳米尺寸的吸收剂半导体晶粒的粒状半导体和氧化物层。 半导体和氧化物层可以设置在电子和空穴传导层之间。 在一些实施方案中，可以沉积多个半导体和氧化物层。

公开(公告)号：US07998606B2

公开(公告)日：2011-08-16

申请号：US12510114

申请日：2009-07-27

申请人： Raj Nagappan Thangaraj ,  Mariana Rodica Munteanu ,  Erol Girt ,  Michael J. Stirniman ,  Thomas Patrick Nolan

发明人： Raj Nagappan Thangaraj ,  Mariana Rodica Munteanu ,  Erol Girt ,  Michael J. Stirniman ,  Thomas Patrick Nolan

IPC分类号： G11B5/66

CPC分类号： G11B5/667

摘要： A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.

摘要翻译： 具有基板，含有约8-18％（原子）Cr的Cr掺杂的含Fe合金的底层和垂直记录磁性层的垂直磁记录介质以及用于提高记录介质的耐腐蚀性和制造记录的方法 介质。

公开(公告)号：US20110011460A1

公开(公告)日：2011-01-20

申请号：US12641893

申请日：2009-12-18

申请人： Mariana Rodica Munteanu ,  Erol Girt

发明人： Mariana Rodica Munteanu ,  Erol Girt

IPC分类号： H01L31/0272 ,  C23C14/34

CPC分类号： H01L31/18 ,  C23C14/0057 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/3492 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541

摘要： In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

摘要翻译： 在一个示例性实施例中，一种方法包括在衬底上溅射一个或多个吸收层。 在特定实施例中，在溅射之前和在一个或多个吸收层中的每一个的溅射期间，将衬底预加热到至少约300摄氏度的衬底温度，并且将至少一个 吸收层在压力为至少0.5帕斯卡的溅射气氛中进行。 另外，在特定实施例中，至少一个吸收层的溅射包括溅射靶，该溅射靶包含硫族化物合金，其包含铜（Cu）和一种或多种硫（S），硒（Se）或 碲（Te）。