公开(公告)号：US10270044B2

公开(公告)日：2019-04-23

申请号：US16180118

申请日：2018-11-05

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki Tsuyama ,  Kimiatsu Nomura ,  Yoshihisa Usami ,  Masatoshi Yumoto ,  Tetsu Kitamura ,  Masashi Koyanagi ,  Tetsuya Watanabe ,  Toshihiro Okamoto ,  Junichi Takeya

IPC: C07D495/14 ,  C09B57/00 ,  C09D5/24 ,  H01L51/00 ,  H01L51/05

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

公开(公告)号：US09660166B2

公开(公告)日：2017-05-23

申请号：US14862264

申请日：2015-09-23

Applicant: FUJIFILM Corporation

Inventor： Ryo Nishio ,  Ryo Hamasaki ,  Kimiatsu Nomura ,  Yoichi Maruyama

IPC: C08K3/08 ,  H01L35/24 ,  H01L35/12 ,  H01L35/14 ,  H01L35/20 ,  H01L35/32

CPC classification number: H01L35/24 ,  C08G61/124 ,  C08G61/126 ,  C08G61/128 ,  C08G2261/11 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/1428 ,  C08G2261/148 ,  C08G2261/228 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/3244 ,  C08G2261/55 ,  H01L35/14 ,  H01L35/20 ,  H01L35/32

Abstract: A thermoelectric conversion element (1) having, on a substrate (12), a first electrode (13), a thermoelectric conversion layer (14), and a second electrode 15, wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer (14); an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element (1); and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

公开(公告)号：US10991868B2

公开(公告)日：2021-04-27

申请号：US16223227

申请日：2018-12-18

Applicant: FUJIFILM Corporation

Inventor： Hiroki Sugiura ,  Yoshinori Kanazawa ,  Kimiatsu Nomura

IPC: H01L35/24 ,  H01L35/22 ,  H01L35/14 ,  H01L35/04

Abstract: An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots.
The thermoelectric conversion element of the present invention is a thermoelectric conversion element having a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer electrically connected to the p-type thermoelectric conversion layer, in which the p-type thermoelectric conversion layer contains a nanocarbon material and at least one kind of component selected from the group consisting of an onium salt and an inorganic salt, the n-type thermoelectric conversion layer contains a nanocarbon material and an onium salt, and a difference between an ionization potential of the p-type thermoelectric conversion layer and an ionization potential of the n-type thermoelectric conversion layer is equal to or smaller than 0.15 eV.

公开(公告)号：US10270043B2

公开(公告)日：2019-04-23

申请号：US15274062

申请日：2016-09-23

Applicant: FUJIFILM Corporation ,  The University of Tokyo

Inventor： Hiroaki Tsuyama ,  Kimiatsu Nomura ,  Yoshihisa Usami ,  Eiji Fukuzaki ,  Masashi Koyanagi ,  Tetsu Kitamura ,  Tetsuya Watanabe ,  Toshihiro Okamoto ,  Junichi Takeya

IPC: H01L51/00 ,  C07D493/14 ,  C07D495/14 ,  C07D497/14 ,  C07D513/14 ,  C07D517/14 ,  C07D519/00 ,  C09D5/24 ,  C09B57/00 ,  H01L51/05

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

公开(公告)号：US20190112192A1

公开(公告)日：2019-04-18

申请号：US16223227

申请日：2018-12-18

Applicant: FUJIFILM Corporation

Inventor： Hiroki Sugiura ,  Yoshinori Kanazawa ,  Kimiatsu Nomura

IPC: C01B32/159 ,  H01L35/04 ,  H01L35/14

Abstract: An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots.The thermoelectric conversion element of the present invention is a thermoelectric conversion element having a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer electrically connected to the p-type thermoelectric conversion layer, in which the p-type thermoelectric conversion layer contains a nanocarbon material and at least one kind of component selected from the group consisting of an onium salt and an inorganic salt, the n-type thermoelectric conversion layer contains a nanocarbon material and an onium salt, and a difference between an ionization potential of the p-type thermoelectric conversion layer and an ionization potential of the n-type thermoelectric conversion layer is equal to or smaller than 0.15 eV.

公开(公告)号：US09564274B2

公开(公告)日：2017-02-07

申请号：US14301796

申请日：2014-06-11

Applicant: FUJIFILM Corporation

Inventor： Yukio Tani ,  Katsumi Kobayashi ,  Kimiatsu Nomura

IPC: H01G9/20 ,  C07D213/79 ,  C07D401/04 ,  C07D409/14 ,  C09B57/10

CPC classification number: H01G9/2059 ,  C07D213/79 ,  C07D401/04 ,  C07D409/14 ,  C09B57/10 ,  Y02E10/542

Abstract: A photoelectric conversion element, having: an electrically-conductive support; a photoconductor layer having a semiconductor fine-particle layer adsorbed a dye; a charge transfer layer containing an electrolyte; and a counter electrode; which are provided on one side of the support in this order, in which the dye has at least one terdentate ligand having at least one acidic group; at least one ligand coordinating to a metal atom M has an sp2 carbon atom; a cyclic group binds to the sp2 carbon atom; a specific substituent R is substituted at an atom of α- or β-position to the atom of the cyclic group directly binding to the sp2 carbon atom; and with the metal atom M, an atom G1 of the α- or β-position, and an atom G2 of the substituent R, an angle θ (∠MG1G2) is 150° or less.

Abstract translation: 一种光电转换元件，具有：导电支撑体; 具有吸附染料的半导体细粒层的感光体层; 含有电解质的电荷转移层; 和对电极; 其中所述染料具有至少一个具有至少一个酸性基团的特定配位体; 与金属原子M配位的至少一个配体具有sp2碳原子; 环状基团与sp2碳原子结合; 特定取代基R在α-或β-位的原子被直接与sp 2碳原子结合的环状基团的原子取代; 并且与金属原子M，α-或β-位的原子G1和取代基R的原子G2，角度θ（∠MG1G2）为150°以下。

公开(公告)号：US09349965B2

公开(公告)日：2016-05-24

申请号：US13789537

申请日：2013-03-07

Applicant: FUJIFILM CORPORATION

Inventor： Katsuyuki Yofu ,  Kimiatsu Nomura ,  Eiji Fukuzaki ,  Yuki Hirai ,  Mitsumasa Hamano ,  Tetsuro Mitsui

IPC: C07D221/18 ,  C07D221/22 ,  C07D223/14 ,  H01L51/00 ,  C07D219/02 ,  C07D455/03 ,  C07D455/06 ,  C07D471/14 ,  C07D471/16 ,  C07C225/22 ,  H01L51/42

CPC classification number: H01L51/0072 ,  C07C225/22 ,  C07D219/02 ,  C07D221/18 ,  C07D455/03 ,  C07D455/06 ,  C07D471/14 ,  C07D471/16 ,  C09B21/00 ,  C09B23/04 ,  C09B57/008 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0094 ,  H01L51/4206 ,  H01L51/4273 ,  Y02E10/549

Abstract: There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol−1·l·cm−1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.

Abstract translation: 提供一种具有特定化学式的化合物，其在紫外可见吸收光谱中在400nm以上且小于720nm处具有吸收最大值，其摩尔消光系数为10,000mol -1·l·cm -1 以上的吸收最大波长，熔点与沉积温度（熔点 - 沉积温度）之间的差为31℃以上。

公开(公告)号：US08637860B2

公开(公告)日：2014-01-28

申请号：US13733256

申请日：2013-01-03

Applicant: FUJIFILM Corporation

Inventor： Kimiatsu Nomura ,  Eiji Fukuzaki ,  Tetsuro Mitsui

IPC: H01L29/08 ,  C07D209/82

CPC classification number: H01L51/0072 ,  B82Y10/00 ,  C09B23/04 ,  C09B57/008 ,  C09B57/10 ,  H01L51/0046 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0094 ,  H01L51/4253 ,  Y02E10/549

Abstract: A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Abstract translation: 一种光电转换装置，包括透明导电膜，光电转换膜和导电膜，其中光电转换膜包括光电转换层和电子阻挡层，其中电子阻挡层含有表示的化合物 具体公式。