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    RESONANT SENSOR
    11.
    发明申请
    RESONANT SENSOR 审中-公开

    公开(公告)号：US20200150089A1

    公开(公告)日：2020-05-14

    申请号：US16745374

    申请日：2020-01-17

    Applicant: FUJIFILM Corporation

    Inventor： Koji HIRONAKA ,  Fumihiko MOCHIZUKI ,  Koji TAKAKU

    IPC: G01N29/02 ,  G01N33/497 ,  A61B5/1477 ,  A61B5/00 ,  C09D149/00

    Abstract: An object of the present invention is to provide a resonant sensor having excellent sensitivity and selectivity with respect to a component to be detected that is contained at a low concentration in the system. A resonant sensor of the present invention has a receiving layer that contains a polymer having a repeating unit represented by Formula (1). In Formula, R1 represents an alkyl group. A plurality of R1's may be the same as or different from each other. R2 represents a hydrogen atom, an alkyl group, or an aryl group.

    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL
    14.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL 有权
    有机薄膜晶体管，有机半导体薄膜和有机半导体材料

    公开(公告)号：US20150218184A1

    公开(公告)日：2015-08-06

    申请号：US14685894

    申请日：2015-04-14

    Applicant: FUJIFILM Corporation

    Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

    IPC: C07D493/04 ,  C09D125/06 ,  H01L51/00

    CPC classification number: C07D493/04 ,  C07F7/0838 ,  C09D125/06 ,  H01L51/0035 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0558

    Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R12 represent a hydrogen atom or a substituent, provided that at least one of R1 to R12 represents a substituent represented by the formula (W), or all of R1 to R12 represent a hydrogen atom. * represents a position bonded to the naphthobisbenzofuran skeleton. L represents a single bond, a divalent linking group, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

    Abstract translation: 在半导体有源层中含有式（1）表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 12表示氢原子或取代基，条件是R 1至R 12中的至少一个表示由式（W）表示的取代基，或全部R 1至R 12表示氢原子。 *表示与萘并苯并呋喃骨架结合的位置。 L表示单键，二价连接基，乙氧基单元重复数为2以上的低聚亚乙基氧基或硅原子数为2以上的低聚硅氧烷。

    BIOMATERIAL
    15.
    发明申请
    BIOMATERIAL 有权

    公开(公告)号：US20210196826A1

    公开(公告)日：2021-07-01

    申请号：US17198417

    申请日：2021-03-11

    Applicant: FUJIFILM Corporation

    Inventor： Kosuke CHIBA ,  Koji TAKAKU

    IPC: A61K47/14 ,  A61K47/32 ,  A61K47/24 ,  A61K47/18 ,  A61K47/10

    Abstract: The present invention provides a biomaterial that is excellent in scratch resistance and retention in a case of being brought into contact with water. The biomaterial according to the embodiment of the present invention is a biomaterial including a neutral acyl lipid, at least one selected from the group consisting of a phospholipid and a quaternary ammonium salt, and a carboxyvinyl polymer. The neutral acyl lipid includes at least one selected from the group consisting of a neutral monoacyl lipid and a neutral diacyl lipid, and a content of the at least one selected from the group consisting of the neutral monoacyl lipid and the neutral diacyl lipid is 80% by mass to 100% by mass with respect to a total mass of the neutral acyl lipid.

    SENSOR
    16.
    发明申请
    SENSOR 审中-公开

    公开(公告)号：US20200158707A1

    公开(公告)日：2020-05-21

    申请号：US16745366

    申请日：2020-01-17

    Applicant: FUJIFILM Corporation

    Inventor： Koji HIRONAKA ,  Fumihiko MOCHIZUKI ,  Koji TAKAKU

    IPC: G01N33/00 ,  G01N27/414 ,  G01N27/12 ,  C08F220/22

    Abstract: The present invention provides a sensor having excellent sensitivity and selectivity with respect to a ketone-based compound. This sensor according to the present invention has a receiving layer including a polymer having a repeating unit represented by Formula (1), and detects a ketone-based compound.

    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL
    18.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL 审中-公开
    有机薄膜晶体管，有机半导体薄膜和有机半导体材料

    公开(公告)号：US20150221876A1

    公开(公告)日：2015-08-06

    申请号：US14685902

    申请日：2015-04-14

    Applicant: FUJIFILM Corporation

    Inventor： Tetsu KITAMURA ,  Koji TAKAKU ,  Wataru SOTOYAMA

    IPC: H01L51/00 ,  C07F7/08 ,  C07D493/04

    CPC classification number: H01L51/0073 ,  C07D493/04 ,  C07F7/0838 ,  C09B57/00 ,  H01L51/0061 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0094 ,  H01L51/0558

    Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R10 represent a hydrogen atom or a substituent, provided that at least one of R1 to R10 represents a substituent represented by the formula (W), or the aromatic hydrocarbon ring formed with any adjacent two of R1 to R10 has a substituent represented by the formula (W). * represents a position bonded to the benzobisbenzofuran skeleton, L represents a single bond or a divalent linking group, and R represents a substituted or unsubstituted acyclic alkyl group having 2 or more carbon atoms, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.

    Abstract translation: 在半导体有源层中含有式（1）表示的化合物的有机薄膜晶体管在反复驱动后具有高的载流子迁移率和阈值电压的小的波动。 R 1〜R 10表示氢原子或取代基，条件是R 1〜R 10中的至少一个表示由式（W）表示的取代基，或者与R 1〜R 10中任意相邻的2个所形成的芳香族烃环具有由 公式（W）。 *表示与苯并二苯并呋喃骨架结合的位置，L表示单键或二价连接基团，R表示取代或未取代的碳原子数2以上的无环烷基，具有重复数量的乙烯氧基单元的低聚亚乙基氧基 2个以上，或者具有2个以上硅原子的低聚硅氧烷基。

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