公开(公告)号：US20220162478A1

公开(公告)日：2022-05-26

申请号：US17669519

申请日：2022-02-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  C23F1/00 ,  C23F1/44

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20210261822A1

公开(公告)日：2021-08-26

申请号：US17318011

申请日：2021-05-12

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US11999876B2

公开(公告)日：2024-06-04

申请号：US17669519

申请日：2022-02-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  C23F1/00 ,  C23F1/44 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  C23F1/00 ,  C23F1/44 ,  H01L21/30625 ,  H01L21/3212

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic acid, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20240141205A1

公开(公告)日：2024-05-02

申请号：US18408986

申请日：2024-01-10

Applicant: Fujifilm Electronic Materials U.S.A, Inc

Inventor： Ting-Kai Huang ,  Bin Hu ,  Yannan Liang ,  Hong Piao

IPC: C09G1/04 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212

Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.

公开(公告)号：US11505718B2

公开(公告)日：2022-11-22

申请号：US17318011

申请日：2021-05-12

Applicant: fujifilm electronic materials u.s.a., inc

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US20210301177A1

公开(公告)日：2021-09-30

申请号：US17214987

申请日：2021-03-29

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： James McDonough ,  Ting-Kai Huang ,  Yannan Liang ,  Shu-Wei Chang ,  Sung Tsai Lin ,  Liqing Wen

IPC: C09G1/02 ,  H01L21/321

Abstract: This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.

公开(公告)号：US11034859B2

公开(公告)日：2021-06-15

申请号：US16298505

申请日：2019-03-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.