摘要:
A method includes providing a semiconductor memory device having at least one memory cell array. The memory cell array has a multiplicity of memory cells arranged in a matrix-like manner. Each of the memory cells is assigned a physical address and an electrical address. The method also includes inputting a physical address of a memory cell that is to be addressed into an address input device of the semiconductor memory device, decoding the input physical address into the assigned electrical address of the memory cell to be addressed by an address decoder device of the semiconductor memory device, and outputting the electrical address to the memory cell array in order to address the memory cell.
摘要:
For testing, a reference clock signal is applied to a first delay path having a fixed delay and a second delay path having a variable delay. The delay paths are connected to inputs of a clocked circuit to initiate data transfer and they apply a clock signal and a data signal, respectively. The variable delay is set within the range [tF−n&Dgr;t/2; tF+n&Dgr;t/2]. The fixed delay tF is at least n&Dgr;t/2. For calibration, the setting range of the variable delay and the fixed delay are each increased to the k-fold value and the variable delay is incremented in steps from n=0 until three phase changes are detected. The value of n at the first phase cycle completion corresponds to the variable delay for the set-up time and the value of n at the third phase cycle completion corresponds to the variable delay for the hold time.
摘要:
A method and a semiconductor component are described in which an internal voltage to be measured is divided via a matched voltage divider, and is passed to a selected connecting pin. Since there are normally no unused connecting pins, in, for example, present-day large scale integrated components, the connected module is disconnected from a selected connecting pin for a specific time period, and the divided measurement voltage is passed to the connecting pin. This is done by use of a controller, which operates appropriate switches. This method is preferably used for memory components such as DRAM, SRAM etc.
摘要:
The invention relates to a method for preparing metallic workpieces for cold forming by contacting the metallic surfaces thereof with an aqueous acid phosphating solution so as to embody at least one phosphate coating and then coating the phosphate-coated surfaces with at least one lubricant in order to embody at least one lubricant layer. According to the inventive method, the phosphating solution essentially contains only calcium, magnesium, or/and manganese as cations that are selected among cations of main group 2 and subgroups 1, 2, and 5 to 8 of the periodic table of chemical elements in addition to phosphate. Furthermore, an alkaline earth metal-containing phosphating solution is free from fluoride and complex fluoride while the phosphating process is carried out electrolytically. The invention further relates to a metallic workpiece that is coated accordingly as well as the use of workpieces coated in said manner.
摘要:
An integrated semiconductor memory, which can be operated in a normal operating state and a test operating state, includes a current pulse circuit with an input terminal for applying an input signal. The current pulse circuit is connected to an output terminal via an interconnect for carrying a current. In the test operating state, the current pulse circuit generates at least one first current pulse with a first, predetermined time duration in a first test cycle and at least one second current pulse with a second, unknown time duration in a subsequent second test cycle. In addition to a first current flowing on the interconnect in the normal operating state, a second current flows on the interconnect during the first test cycle and a third current flows during the second test cycle in the test operating state.
摘要:
An integrated circuit includes an input terminal (IN) for application of a supply voltage (Vext) and an output terminal (A) for generation of an output voltage (Vout). A first branch including a first controllable resistance (T1) and a second branch including a charge pump (10) and a second controllable resistance (T2) are connected between the input terminal (IN) and the output terminal (A). A control circuit (20) alters the resistance values of the first and second controllable resistances (T1, T2) in a manner dependent on a ratio of an actual value (Vout) of the output voltage to a desired value (VSout) of the output voltage and a ratio of an actual value (Vext) of the supply voltage to a desired value (VSext) of the supply voltage. As a result, the output voltage (Vout) can be stabilized to the desired value (VSout) virtually independently of fluctuations of the supply voltage.
摘要:
The invention relates to an aqueous concentrate which is stable with respect to freezing and defrosting and which contains at least one water-soluble or water-dispersible copper compound and, optionally, also a water-soluble or water-dispersible tin compound for use in a diluted state as a bath for the currentless copper plating or bronze plating of objects, especially metal objects such as iron or steel wires, characterised in that it contains at least one complexed water-soluble or water-dispersed copper compound. The invention also relates to an aqueous bath which contains at least one aqueous or water-dispersible copper compound and, optionally, a water-soluble or water-dispersible tin compound for the currentless copper plating of objects in addition to at least one brightening agent and which has an adjusted pH value of less than 2.5. The invention also relates to a method for currentless copper plating or bronze plating of an object, especially a metallic object.
摘要:
An integrated circuit includes a current generator circuit with a first input terminal for applying a reference voltage and a second input terminal for applying an input voltage, which is generated internally from an externally applied supply voltage by a voltage generator circuit. The current generator circuit is connected to an output terminal via an interconnect. A first current flows on the interconnect in a test operating state of the integrated circuit. The current generator circuit generates a first partial current in a first test cycle of a test operating state and a second partial current in a subsequent second test cycle. The partial currents are each superposed on the first current on the interconnect. Consequently, three currents occur at the output terminal during the test operating state. The internally generated input voltage of the current generator circuit is determined from the three currents and the reference voltage.
摘要:
An integrated circuit includes a programming circuit (10) for generating programming signals (PS1, . . . , PS4) with a first input terminal (E1) for applying a control voltage (ES), a second input terminal (E2) for applying a reference voltage (Vref), a storage circuit (30) with programmable switches (35, . . . , 38) and output terminals (A1, . . . , A4). The programming circuit in each case generates a programming signal (PS1, . . . , PS4) when the control voltage (ES) exceeds a predefined threshold voltage formed from the reference voltage. The number of programming signals (PS1, . . . , PS4) is dependent on the magnitude of the threshold voltage exceeded by the control voltage (ES). The programming signals are used for programming the programmable switches (35, . . . , 38). The programming state of the programmable switches can be read out via the output terminals (A1, . . . , A4) of the integrated circuit. The integrated circuit enables the storage of external operating parameters of the integrated circuit.