Nanoscale, crystalline silicon powder
    12.
    发明申请
    Nanoscale, crystalline silicon powder 审中-公开
    纳米级,晶体硅粉末

    公开(公告)号:US20070172406A1

    公开(公告)日:2007-07-26

    申请号:US10579762

    申请日:2004-11-13

    IPC分类号: C01B33/00

    CPC分类号: C01B33/02 C01B33/027

    摘要: Aggregated, crystalline silicon powder with a BET surface of more than 50 m2/g. The powder is produced by continuously feeding at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping substance and an inert gas into a reactor and mixing the components there, wherein the proportion of silane is between 0.1 and 90 wt. % referred to the sum total of silane, doping substance and inert gas, the mixture is caused to react by input of energy, wherein a plasma is produced by the input of energy by means of electromagnetic radiation in the microwave range at a pressure of 10 to 1100 mbar, the reaction mixture is allowed to cool and the reaction product is separated in the form of a powder from gaseous substances. The powder may be used for the production of electronic components.

    摘要翻译: 聚集的BET表面积大于50m 2 / g的结晶硅粉末。 通过将至少一种蒸气或气态硅烷和任选的至少一种蒸汽或气态掺杂物质和惰性气体连续地供入反应器并混合其中的组分来生产粉末,其中硅烷的比例为0.1-90重量%。 %是指硅烷,掺杂物质和惰性气体的总和,通过输入能量使混合物反应,其中通过在微波范围内以10的压力通过电磁辐射输入能量来产生等离子体 至1100毫巴,使反应混合物冷却,将反应产物以粉末形式从气态物质中分离。 粉末可用于生产电子元件。

    Nanoscale crystalline silicon powder
    13.
    发明申请
    Nanoscale crystalline silicon powder 有权
    纳米级结晶硅粉

    公开(公告)号:US20070094757A1

    公开(公告)日:2007-04-26

    申请号:US10579460

    申请日:2004-11-13

    IPC分类号: C07F7/00

    摘要: Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt.%, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

    摘要翻译: 聚合的结晶硅粉末,其BET表面积为20至150m 2 / g。 通过使至少一种蒸气或气态硅烷和任选的至少一种蒸气或气态掺杂材料,惰性气体和氢气在热壁反应器中加热,冷却反应混合物或使反应混合物冷却和分离 来自气态物质的粉末形式的产物,其中相对于硅烷,掺杂材料,氢气和惰性气体的总和,硅烷的比例为0.1-90重量%,并且其中氢的比例相对于 相对于氢,硅烷,惰性气体和掺杂材料的总和为1mol。 %至96mol。 %。 它可用于生产电子元件。

    PYROGENIC ZINC OXIDE-COMPRISING COMPOSITE OF LAYERS AND FIELD-EFFECT TRANSISTOR COMPRISING THIS COMPOSITE
    17.
    发明申请
    PYROGENIC ZINC OXIDE-COMPRISING COMPOSITE OF LAYERS AND FIELD-EFFECT TRANSISTOR COMPRISING THIS COMPOSITE 有权
    含氧化锌氧化物包覆层的复合材料和包含该复合材料的场效应晶体管

    公开(公告)号:US20100132788A1

    公开(公告)日:2010-06-03

    申请号:US12596150

    申请日:2008-03-10

    CPC分类号: H01L21/32055 H01L29/7869

    摘要: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

    摘要翻译: 包括电介质层和包含热解氧化锌并结合到电介质层的层的层的复合物。 制造层的复合体的方法,其中将热解氧化锌以平均聚集体直径小于200nm的存在氧化锌颗粒的分散体形式施加到电介质层,氧化锌层 干燥,然后在小于200℃的温度下处理。制备层的复合物的方法,其中将热解氧化锌施加到基质层或基质层的复合物,其中锌的分散体 存在平均聚集体直径小于200nm的氧化物颗粒以形成氧化锌层,然后在小于200℃的温度下处理氧化锌层和基底层,然后施加电介质层 到氧化锌层。 具有复合层的场效应晶体管。