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20 条记录 (耗时 0.023 秒)

    Epitaxial substrate for field effect transistor
    12.
    发明授权
    Epitaxial substrate for field effect transistor 有权
    场效晶体管的外延衬底

    公开(公告)号：US07750351B2

    公开(公告)日：2010-07-06

    申请号：US11386844

    申请日：2006-03-23

    申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    IPC分类号： H01L23/29 ,  H01L21/04

    CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

    摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

    摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

    Process for the production of vinegar with high acetic acid concentration
    14.
    发明授权
    Process for the production of vinegar with high acetic acid concentration 失效
    醋酸浓度高的醋生产工艺

    公开(公告)号：US4364960A

    公开(公告)日：1982-12-21

    申请号：US192468

    申请日：1980-09-30

    申请人： Yoshio Kunimatsu ,  Hajime Okumura ,  Hiroshi Masai ,  Koki Yamada ,  Mikio Yamada

    发明人： Yoshio Kunimatsu ,  Hajime Okumura ,  Hiroshi Masai ,  Koki Yamada ,  Mikio Yamada

    IPC分类号： C12J1/04 ,  C12J1/00

    CPC分类号： C12J1/00

    摘要： A finished vinegar having an acetic acid concentration higher than 20 percent weight by volume is produced by repeating a fermentation cycle wherein a broth is fermented at 27.degree.-32.degree. C. in a 1st submerged fermentation tank by a continuous batch process, and, when the acetic acid concentration of the fermenting broth reaches 12-15 percent weight by volume, the large part of the fermenting broth in the 1st fermentation tank is withdrawn and charged in a 2nd submerged fermentation tank. The 1st fermentation tank is recharged with a mash and the fermentation of the fermenting broth in the 2nd tank is continued under aeration while lowering the temperature of the fermenting broth in such manner that the final fermentation temperature does not fall below 18.degree. C. and the lowering temperature does not become higher than the temperature once lowered.

    摘要翻译： 乙酸浓度高于20体积重量的成品醋通过重复发酵循环来制备，其中在第一浸没发酵罐中通过连续分批过程在27℃-32℃发酵肉汤，并且当 发酵液的乙酸浓度达到12-15重量％，第一发酵罐中大部分发酵液被取出并装入第二个浸没发酵罐中。 第一发酵罐用醪液补充，并且在通气的同时继续在第二罐中发酵发酵液，同时以最终发酵温度不低于18℃的方式降低发酵液的温度，并且 降低温度不会高于一旦降低的温度。

    Epitaxial substrate for field effect transistor
    15.
    发明申请
    Epitaxial substrate for field effect transistor 有权
    场效晶体管的外延衬底

    公开(公告)号：US20070069253A1

    公开(公告)日：2007-03-29

    申请号：US11386844

    申请日：2006-03-23

    申请人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    发明人： Hiroyuki Sazawa ,  Koji Hirata ,  Masayoshi Kosaki ,  Hajime Okumura

    IPC分类号： H01L29/80

    CPC分类号： H01L29/7787 ,  H01L29/66462 ,  Y10S438/931

    摘要： An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

    摘要翻译： 一种用于场效应晶体管的外延晶体，其具有通过使用外延生长法在具有微管的SiC单晶基底板上生长的基于氮化物的III-V族半导体外延晶体，其中至少部分微管从 SiC单晶基底衬底中的外延晶体终止于晶体管的有源层与SiC单晶基底之间。

    MOBILE ELECTRONIC DEVICE
    18.
    发明申请
    MOBILE ELECTRONIC DEVICE 有权
    移动电子设备

    公开(公告)号：US20120069308A1

    公开(公告)日：2012-03-22

    申请号：US13322539

    申请日：2010-05-26

    申请人： Kanji Satake ,  Hajime Okumura

    发明人： Kanji Satake ,  Hajime Okumura

    IPC分类号： G03B21/14

    CPC分类号： G03B21/30 ,  G03B21/005 ,  G06F3/017 ,  G06F3/0346 ,  G06F3/0485 ,  G06F2200/1637 ,  H04M1/0272 ,  H04M2250/12 ,  H04N1/3876 ,  H04N9/3129 ,  H04N9/3147 ,  H04N9/3173 ,  H04N9/3185

    摘要： According to one embodiment, a mobile electronic device includes: a housing; an image projector provided on the housing for projecting a portion of an original image to a projection area; and a processing unit. The processing unit causes the image projector to change an image projected to the projection area from a first image corresponding to a first portion of the original image to a second image corresponding to a second portion of the original image according to change information for changing the image projected by the image projector.

    摘要翻译： 根据一个实施例，移动电子设备包括：壳体; 设置在所述壳体上用于将原始图像的一部分投射到投影区域的图像投影仪; 和处理单元。 处理单元使得图像投影仪根据用于改变图像的改变信息将投影到投影区域的图像从对应于原始图像的第一部分的第一图像改变为对应于原始图像的第二部分的第二图像 由图像投影仪投影。